The Hong Kong University of Science and Technology

Dongli Zhang

Hoi-Sing Kwok

Man Chit Wong

Zhiguo Meng

Hoi Sing Kwok

Man Yu Wong

Xiuling Zhu

Jiaxin Sun

Xuejie Shi

The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.

Method for fabrication of active-matrix display panels

A thin-film transistor includes a source and a drain that have each been replaced with a metal by a heat-treatment at a temperature within the range of 250&#xb0; C. and 500&#xb0; C.

Thin-film transistors with metal source and drain and methods of fabrication

Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon 'islands'. A metal-gettering layer is formed on the resulting partially crystallized thin film. A second, low-temperature, heat-treatment completes the MIC process, whilst gettering metal elements from the partially crystallized thin film. The process results in the desired polycrystalline silicon thin film.

Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom

Growing community of inventors

Hong Kong, China

Dongli Zhang