Samsung Electronics Co., Ltd.

Dongkyo Shim

Kitae Park

Donghun Kwak

Sang-Won Park

Sang-won Shim

Jaeduk Yu

Hyun Jun Yoon

Hyun-Wook Wook Park

Sang-Soo Park

Sang Soo Park

Jaeyong Jeong

Ohsuk Kwon

June-Hong Park

Ju Seok Lee

Hyunjun Yoon

DongHun Kwak

Jonghoo Jo

Disclosed is a nonvolatile memory device which includes a first plane that includes a plurality of memory blocks, a second plane that includes a plurality of memory blocks, an address replacing circuit that receives a first input address from an external controller, the first input address corresponding to a first memory block of the plurality of memory blocks of the first plane from an external controller and outputs a replaced address based on the first input address and bad block information, and an address decoder that controls word lines connected with a second memory block based on the replaced address, the word lines corresponding to the replaced address from among the plurality of memory blocks of the second plane. The first memory block of the first plane is a bad block.

Nonvolatile memory device and operation method thereof

Provided are a memory controller and memory system having an improved threshold voltage distribution characteristic and an operating method of the memory system. As a write request of data with respect to a first block is received, an erase program interval (EPI) is determined denoting a time period elapsed after erasure of the first block. When the determined EPI is equal to or less than a reference time, data is programmed to the first block based on a first operation condition selected from among a plurality of operation conditions. When the determined EPI is greater than the reference time, the data is programmed to the first block based on a second operation condition selected from among the plurality of operation conditions.

Memory controller, memory device and memory system having improved threshold voltage distribution characteristics and related operating methods

Provided are a memory controller and memory system having an improved threshold voltage distribution characteristic and an operating method of the memory system. As a write request of data with respect to a first block is received, an erase program interval (EPI) is determined denoting a time period elapsed after erasure of the first block. When the determined EPI is equal to or less than a reference time, data is programmed to the first block based on a first operation condition selected from among a plurality of operation conditions. when the When the determined EPI is greater than the reference time, the data is programmed to the first block based on a second operation condition selected from among the plurality of operation conditions.

A nonvolatile memory device includes a voltage generator that sequentially provides a first setup voltage and second setup voltage to a word line of a memory cell array, and control logic including a time control unit that determines a word line setup time for the word line in relation to the second setup voltage based on a difference between the first and second setup voltages.

Nonvolatile memory device and method of operation with a word line setup time based on two sequential read voltages

Nonvolatile memory device with controlled word line setup time

Disclosed is a nonvolatile memory device. The nonvolatile memory device includes a cell array including a plurality of memory cells, a page buffer including a plurality of latch sets, and a control logic. The page buffer is connected to the cell array through bit lines. The latch sets respectively are configured to sense data from selected memory cells among the memory cells through the bit lines. The latch sets respectively are configured to perform a plurality of read operations to determine one data state. The latch sets are respectively configured to store results of the read operations. The control logic configured to control the page buffer such that the latch sets sequentially and respectively store the results of the read operations, to compare data stored in the latch sets with each other, and to select one latch set among the latch sets based on the comparison result.

Nonvolatile memory device and read method thereof

A programming method of a nonvolatile memory device including; programming data in memory cells connected to a word line by performing a coarse program operation; and programming the data in the memory cells by performing a fine program operation, wherein the number of program states in the coarse program operation is changed according to a program/erase (P/E) cycle number.

Storage device and a write method including a coarse program operation and fine program operation

A nonvolatile memory device may include a memory cell array, an address decoder circuit, a page buffer circuit, and a control logic circuit. An erase operation includes iteratively performing an erase loop which includes an erase section where an erase voltage is applied to the memory cells of the selected memory block and an erase verification section where the memory cells of the selected memory block are verified using an erase verification voltage. If the memory cells of the selected memory block are determined as an erase pass in the erase verification section, the control logic circuit monitors the memory cells of the selected memory block. If the monitored result indicates that the memory cells of the selected memory block are at an abnormal state, the control logic circuit applies an extra erase voltage to the memory cells of the selected memory block.

Nonvolatile memory device, storage device including nonvolatile memory device and operating method of nonvolatile memory device

A nonvolatile memory device includes a cell array including a plurality of cell strings extending on a substrate in a vertical direction, a page buffer connected to a plurality of bit lines and configured to store sensing data of the cell array in a sensing operation, a voltage generator configured to provide voltages to a plurality of word lines and the plurality of bit lines, and an input/output buffer configured to temporarily store the sensing data received in a data dump from the page buffer and to output the temporarily stored data to an external device. The nonvolatile memory device further includes control logic configured to set a status of the nonvolatile memory device to a ready state after the sensing data is dumped to the input/output buffer and before recovery of the cell array from a bias voltage of the sensing operation is complete.

Nonvolatile memory devices, memory systems and related control methods

Nonvolatile memory device and method controlling word line setup time based on difference in setup voltage levels

Nonvolatile memory devices, memory systems, and control methods using simultaneous recovery and output operations

A write method of a storage device includes determining whether to perform a coarse program operation based on information about memory cells of a memory device, in response to a determination that the coarse program operation is to be performed, programming data in the memory device by performing the coarse program operation and a fine program operation, and in response to a determination that the coarse program operation is not to be performed, programming data in the memory device by performing the fine program operation.

Storage device and a write method thereof

A method of programming a nonvolatile memory device comprises performing an N-th program loop based on state data stored in data latches according to a default state ordering, determining whether conversion of the default state ordering is required according to a predetermined criterion, as a consequence of determining that conversion of the default state ordering is required, converting all or part of the state data stored in the data latches from the default state ordering to another state ordering, and performing a (N+1)th program loop based on the converted state data.

Nonvolatile memory device, memory system comprising same, and method of programming same

A method of operating a nonvolatile memory device comprises receiving a read command from a memory controller, determining a read mode of the nonvolatile memory device, selecting a read voltage based on the read mode, and performing a read operation on memory cells of a selected page of the nonvolatile memory device using the selected read voltage.

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Seoul, South Korea

Dongkyo Shim