Samsung Electronics Co., Ltd.

Dongkwan Yang

Jieun Lee

Seunguk Han

Hoju Song

Youngsin Kim

Sangho Yun

Yoongi Hong

Gyuhyun Lee

Kijin Park

Dongkyun Lim

A semiconductor device includes a gate structure on a substrate, first and second spacer structures on first and second sidewalls, respectively, opposite to each other of the gate structure, and first and second source/drain layers at upper portions of the substrate adjacent to the first and second sidewalls, respectively, of the gate structure. An upper surface of the gate structure has a height with reference to an upper surface of the substrate being a base level decreasing from a central portion to the first sidewall and substantially constant from the central portion to the second sidewall.

Semiconductor devices having a decreasing height gate structure

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Seoul, South Korea

Dongkwan Yang