Samsung Electronics Co., Ltd.

Dongku Kang

Chanho Kim

Kyunghwa Yun

Daeseok Byeon

Jun Jin Kong

Dong Hyuk Chae

Seung-Hwan Song

Kyungha Koo

Pansuk Kwak

Jihong Kim

Su Chang Jeon

HyunJin Kim

Kyung-min Kang

Yunjeong Park

Tae-young Kim

Seung Jae Lee

Won-Taeck Jung

Moosung Kim

Jae-Duk Yu

Nam Phil Jo

Min Cheol Park

Chihyun Cho

Seung Hoon Lee

Kyoung Lae Cho

Chiweon Yoon

Kyung-Min Kang

Kwang Won Kim

Sung Chung Park

Haejin Lee

Kyuhwan Lee

Dae Yeal Lee

Jinman Han

Sang-Won Park

Seyoung Jang

Jinyong Park

Jichul Kim

Youngho Lim

Ohsuk Kwon

Jung-Yun Yun

Chul Bum Kim

Bongkyu Min

Baekeun Cho

Kuntak Kim

Han-jun Lee

Min Sang Park

Bohyeon Kim

Gyosoo Choo

Sungwhan Seo

Hyuntae Jang

Jaewoo Im

Donghun Yu

Haein Chung

Chihwan Jeong

Hyuncheol Jin

HyeongJun Kim

Jinhwan Jung

Ahreum Hwang

Won-taeck Jung

Seung-Gum Kim

Various embodiments of the disclosure relate to a heat radiating structure and an electronic device including the same. According to various embodiments of the disclosure, it is possible to provide an electronic device including: a housing including a first surface facing a first direction, a second surface facing a second direction opposite to the first direction, and a third surface enclosing an internal space between the first surface and the second surface, wherein at least one portion of the third surface faces a third direction different from the first direction and the second direction, wherein a first opening is formed in the first surface, and a second opening is formed in the third surface; a substrate disposed in the internal space; an electronic component disposed on at least one surface of the substrate; and a mesh member disposed in the internal space and disposed adjacent to the first opening and the second opening.

Heat radiating member and electronic device including same

A nonvolatile memory device includes a peripheral circuit including a first active region and a memory block including a second active region on the peripheral circuit. The memory block includes a vertical structure including pairs of a first insulating layer and a first conductive layer, a second insulating layer on the vertical structure, a second conductive layer and a third conductive layer spaced apart from each other on the second insulating layer, first vertical channels and second vertical channels. The second conductive layer and the third conductive layer are connected with a first through via penetrating the vertical structure, the second active region, and a region of the second insulating layer that is exposed between the second conductive layer and the third conductive layer.

Nonvolatile memory device

An integrated circuit device includes a memory including a memory cell insulation surrounding a memory stack and a memory cell interconnection unit, a peripheral circuit including a peripheral circuit region formed on a peripheral circuit board, and a peripheral circuit interconnection between the peripheral circuit region and the memory structure, a plurality of conductive bonding structures on a boundary between the memory cell interconnection and the peripheral circuit interconnection in a first region, the first region overlapping the memory stack in a vertical direction, and a through electrode penetrating one of the memory cell insulation and the peripheral circuit board and extended to a lower conductive pattern included in the peripheral circuit interconnection in a second region, the second region overlapping the memory cell insulation in the vertical direction.

Integrated circuit device

A nonvolatile memory device includes a peripheral circuit region and a memory cell region vertically connected with the peripheral circuit region, the peripheral circuit region including at least one first metal pad, and the memory cell region including at least one second metal pad directly connected with the at least one first metal pad. A method of programming the nonvolatile memory device incudes: receiving a programming command, data for a plurality of pages, and an address corresponding to a selected word-line; programming the data for one of the pages to an unselected word-line; reading data of a previously programmed page from the selected word-line; and programming the data for the remaining pages and the data of the previously programmed page to the selected word-line.

Nonvolatile memory device and operation method thereof

A memory device comprises a peripheral circuit region including a first substrate and circuit elements on the first substrate, the circuit elements including a row decoder, and a memory cell region including a cell array region and a cell contact region, wherein the cell array region includes wordlines, stacked on a second substrate on the peripheral circuit region, and channel structures extending in a direction perpendicular to an upper surface of the second substrate and penetrating the wordlines, wherein the cell contact region includes cell contacts connected to the wordlines and on both sides of the cell array region in a first direction parallel to the upper surface of the second substrate, the cell contacts including a first cell contact region and a second cell contact region, the first and second cell contact regions having different lengths to each other in the first direction, wherein each of the first and second cell contact regions includes first pads having different lengths than each other in the first direction, and second pads different from the first pads, wherein the cell contacts are connected to the wordlines in the first pads, wherein the number of the second pads included in the first cell contact region is greater than the number of the second pads included in the second cell contact region, and wherein the memory cell region includes a first metal pad and the peripheral circuit region includes a second metal pad, and the memory cell region and the peripheral circuit region are vertically connected to each other by the first metal pad and the second metal pad.

Memory device

An electronic device is provided. The electronic device includes a rollable display. The electronic device may include a main bracket configured to support the first portion of the rollable display, a roller member disposed in the first direction from the main bracket and arranged in a third direction perpendicular to the first direction, at least one folding support member disposed between the main bracket and the roller member and configured to support the second portion of the rollable display, a circuit board disposed to overlap at least a portion of the main bracket, at least one electronic component disposed adjacent to the roller member, and a FPCB configured to electrically connecting the main circuit board and the electronic component, wherein the FPCB is disposed to pass through the folding support member and extends from a portion of the circuit board to a portion of the electronic component.

Electronic device including rollable display

A nonvolatile memory device includes a peripheral circuit region and a memory cell region vertically connected with the peripheral circuit region, the peripheral circuit region including at least one first metal pad, and the memory cell region including at least one second metal pad directly connected with the at least one first metal pad. A method of programming the nonvolatile memory device includes: receiving a programming command, data for a plurality of pages, and an address corresponding to a selected word-line; programming the data for one of the pages to an unselected word-line; reading data of a previously programmed page from the selected word-line; and programming the data for the remaining pages and the data of the previously programmed page to the selected word-line.

The disclosure relates to a wireless charging device including a cooling fan, and the wireless charging device according to an embodiment of the disclosure includes: a housing including a holding portion configured to hold an external electronic device; a first bracket positioned in the holding portion; a conductive coil disposed in the first bracket; a second bracket positioned in the holding portion and including a penetrating hole; a first cooling fan positioned in the penetrating hole; a second cooling fan positioned in the penetrating hole and spaced apart from the first cooling fan; and a partition formed in the penetrating hole to isolate the first cooling fan and the second cooling fan from each other, the penetrating hole being divided into a first area having the first cooling fan disposed therein and a second area having the second cooling fan positioned therein, at least one protrusion having a volute shape formed on at least a portion of the second bracket or at least a portion of the partition, a first opening formed on at least an area of the first bracket to allow air cooled by the first cooling fan and/or the second cooling fan to move to the holding portion, and a second opening formed on at least an area of the holding portion to allow the air transmitted from the first opening to move outside the wireless charging device.

Method for controlling cooling fan and wireless charging device

A method of programming a nonvolatile memory device includes: receiving a programming command, data for a plurality of pages, and an address corresponding to a selected word-line; programming the data for one of the pages to an unselected word-line; reading data of a previously programmed page from the selected word-line; and programming the data for the remaining pages and the data of the previously programmed page to the selected word-line.

A portable communication device is provided. A portable communication device includes a first nanofiber member having a first density, a second nanofiber member attached to the first nanofiber member and having a second density lower than the first density, a heat transfer member positioned on or above the second nanofiber member, and a conductive material coated on at least a portion of the first nanofiber member and the second nanofiber member. At least some of the conductive material may penetrate into the first nanofiber member or the second nanofiber member. Various other embodiments may be possible.

Electromagnetic-wave-shielding sheet capable of dissipating heat of electronic component and electronic device including the same

A memory device includes a peripheral circuit region comprising a first substrate, a plurality of metal layers over the first substrate, and a first metal pad, a cell region comprising a second substrate, a plurality of gate lines over the second substrate, a plurality of upper interconnection layers in the second substrate, and a second metal pad, wherein the cell region is vertically connected to the peripheral circuit region by the first metal pad and the second metal pad, a common source line between the second substrate and the plurality of gate lines, the common source line comprising a through hole, and a word line cut region extending across the plurality of gate lines and extending through the through hole of the common source line to be connected to a first upper interconnection layer from among the plurality of upper interconnection layers.

A vertical memory device is provided. The vertical memory device includes gate electrodes formed on a substrate and spaced apart from each other in a first direction substantially perpendicular to an upper surface of the substrate, the gate electrodes including a first gate electrode and a second gate electrode that is interposed between the first gate electrode and the substrate; a channel extending through the gate electrodes in the first direction; an insulating isolation pattern extending through the first gate electrode in the first direction, and spaced apart from the first gate electrode in a second direction substantially parallel to the upper surface of the substrate; and a blocking pattern disposed on an upper surface, a lower surface and a sidewall of each of the gate electrodes, the sidewall of the gate electrodes facing the channel. The insulating isolation pattern directly contacts the first gate electrode.

Vertical memory devices

An integrated circuit (IC) device includes a peripheral circuit structure, a memory stack including a plurality of gate lines overlapping the peripheral circuit structure in a vertical direction on the peripheral circuit structure, an upper substrate between the peripheral circuit structure and the memory stack, the upper substrate including a through hole positioned below a memory cell region of the memory stack, a word line cut region extending lengthwise in a first lateral direction across the memory stack and the through hole, and a common source line located in the word line cut region, the common source line including a first portion extending lengthwise in the first lateral direction on the upper substrate and a second portion integrally connected to the first portion, the second portion penetrating the upper substrate through the through hole from an upper portion of the upper substrate and extending into the peripheral circuit structure.

Growing community of inventors

Seongnam-si, South Korea

Dongku Kang