Samsung Display Co., Ltd.

Samsung Corning Precision Materials Co., Ltd.

Samsung Corning Advanced Glass, LLC

Dongjo Kim

Do-Hyun Kim

Youngmin Kim

Yoonho Khang

YoungMin Kim

Myounggeun Cha

Jaekyung Go

Hyunmin Hwang

Dongwon Han

Chanyoung Park

Jong Chan Lee

Shin Il Choi

Sanggab Kim

Jungkyu Lee

Jiseon Lee

Myounghwa Kim

Woo-Seok Jeon

Kyoungwon Lee

Soyoung Koo

Danbi Choi

Yoon Gyu Lee

Soukjune Hwang

Sehwan Yu

Jaewoo Park

Insung Sohn

Juok Park

Sangwon Yoon

Gunhyo Lee

Yongjin Lee

A display device includes: a first substrate having a display area and a non-display area on one side of the display area; a second substrate arranged opposite the first substrate; a display element arranged on the display area, the display element including a pixel electrode, an intermediate layer arranged on the pixel electrode, and an opposite electrode arranged on the intermediate layer; a power supply line arranged on the non-display area; and a conductive layer arranged on the power supply line and including the same material as the pixel electrode.

Display device having a conductive layer of a same material as the pixel electrode covering one side surface of a power supply line formed under a sealing portion between two substrates

A display device including a substrate; a sealing member surrounding a part of a transmission area of the substrate; a plurality of pixels in a display area of the substrate; an encapsulation substrate facing the substrate with the sealing member between the encapsulation substrate and the substrate; a transparent material layer between the substrate and the encapsulation substrate and corresponding to the transmission area; and a light-shielding portion on the encapsulation substrate and corresponding to the sealing member. A width of the light-shielding portion is greater than a width of the sealing member.

Display device

A liquid crystal display includes a first substrate including a plurality of pixels, a second substrate facing the first substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. At least one of the pixels includes a thin film transistor disposed on a first insulating substrate, an insulating layer overlapping the thin film transistor, and a pixel electrode disposed on the insulating layer. A contact hole is formed through the insulating layer to expose a first electrode of the thin film transistor, the pixel electrode is electrically connected to the first electrode through the contact hole, and the pixel electrode has a single-layer in an area where the contact hole is formed and a double-layer on the insulating layer.

Liquid crystal display and a method of manufacturing the same

A thin film transistor (TFT) substrate, a flat display apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the flat display apparatus, the thin film transistor (TFT) substrate including a substrate; a first gate electrode on the substrate, the first gate electrode including a first branch electrode and a second branch electrode that are spaced apart from one another; a polysilicon layer on the first gate electrode and insulated from the first gate electrode; and a second gate electrode on the polysilicon layer, the second gate electrode being insulated from the polysilicon layer and overlying the first and second branch electrodes.

Thin film transistor substrate, display apparatus comprising the same, method of manufacturing thin film transistor substrate, and method of manufacturing display apparatus

Provided is a semiconductor device including a buffer layer that is on a substrate and includes an inclined surface; a crystalline silicon layer that is on the buffer layer; a gate electrode that is on the crystalline silicon layer while being insulated from the crystalline silicon layer; and a source electrode and a drain electrode that are each electrically connected to the crystalline silicon layer, the angle between the substrate and the inclined surface being in a range of about 17.5 degrees to less than about 70 degrees.

Semiconductor device, manufacturing method thereof, and display apparatus

A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.

Thin-film transistor and zinc oxide-based sputtering target for the same

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Yongin, South Korea

Dongjo Kim