Samsung Electronics Co., Ltd.

Dongjin Yun

Hyangsook Lee

Seong Heon Kim

Kyu Sik Kim

Junghwa Kim

Sung Heo

Yongsu Kim

Sung Jun Park

Shin Ae Jun

Kyung Bae Park

Junho Lee

Tae Gon Kim

Hyukjae Kwon

Changseok Lee

Wenxu Xianyu

Minsu Seol

Yongsung Kim

Nayoun Won

Seyun Kim

Takkyun Ro

Taekhoon Kim

Mokwon Kim

Mi Hye Lim

Eunae Cho

Changhoon Jung

Gyeongsu Park

Satoh Ryuichi

Youngnam Kwon

Hyung-Ik Lee

Weonkyu Koh

Sungjun Park

Sunghoon Park

Hyeonsu Heo

Seongheon Kim

Jaegwan Chung

Insun Jung

Woon Jung Paek

Nam Jeong Kim

Young Mo Sung

Sunjung Byun

Daeun Yu

Yong-Young Park

A quantum dot including a semiconductor nanocrystal core including Group III-V compound, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, and a composite/electronic device. The quantum dot does not include cadmium and the first semiconductor nanocrystal shell includes a polyvalent metal dopant at an interface with the second semiconductor nanocrystal shell.

Quantum dots and electronic device including the same

A conductor includes a plurality of metal nanostructures and an organic material, where a portion of the organic material surrounding each of the metal nanostructures is selectively removed, and the conductor has a haze of less than or equal to about 1.1, a light transmittance of greater than or equal to about 85% at about 550 nm, and a sheet resistance of less than or equal to about 100 &#x3a9;/sq. An electronic device includes the conductor, and a method of manufacturing a conductor includes preparing a conductive film including a metal nanostructure and an organic material, and selectively removing the organic material from the conductive film using a cluster ion beam sputtering.

Conductor and method of manufacturing the same

Provided are a conductive composite structure for an electronic device, a method of preparing the conductive composite structure, an electrode for an electronic device including the conductive composite structure, and an electronic device including the conductive composite structure. The conductive composite structure may contain graphene and an organic composite layer including a conductive polymer having a work function of about 5.3 eV or lower, and has a sheet resistance deviation of about 10% or less.

Conductive composite structure for electronic device, method of preparing the same, electrode for electronic device including the conductive composite structure, and electronic device including the conductive composite structure

A metal-air battery includes an anode portion including a metal; a cathode portion including a porous layer, wherein the porous layer includes a reduced non-stacked graphene oxide; and an electrolyte disposed between the anode portion and the cathode portion.

Metal-air battery and method of manufacturing the same

An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiN, 0&#x3c;x&#x3c;1), silicon oxynitride (SiON, 0&#x3c;y&#x3c;0.5, 0&#x3c;z&#x3c;1), and a combination thereof.

Optoelectronic device, and image sensor and electronic device including the same

A nanocrystal represented by the following Formula 1 and a preparation method thereof:AMXL&#x2003;&#x2003;Formula 1

Nanocrystal and preparation method thereof

An optoelectronic device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode, and a buffer layer between at least one of the photoelectric conversion layer and the first electrode, and the photoelectric conversion layer and the second electrode, the buffer layer including one of MoO(2.58&#x2266;x1&#x3c;3.0), ZnO(1.0&#x2266;x2&#x3c;2.0), TiO(1.5&#x2266;x3&#x3c;2.0), VO(1.5&#x2266;x4&#x3c;2.0), TaO(1.0&#x2266;x5&#x3c;2.5), WO(2.0&#x3c;x6&#x3c;3.0), and a combination thereof.

Growing community of inventors

Pohang-si, South Korea

Dongjin Yun