Samsung Electronics Co., Ltd.

Dongjin Shin

Jun Jin Kong

Hong Rak Son

Daeseok Byeon

Jisu Kim

Eun Chu Oh

Pilsang Yoon

Taehyun Song

Dongsup Jin

Jinbae Bang

Sangwon Park

Jooyong Park

Seungyong Choi

Manjae Yang

Suchang Jeon

Bongkil Jung

Byungsun Lee

Dongsu Jang

A non-volatile memory device includes a meta area having a first region storing first initial data, and second regions storing second initial data, different from each other; a user area configured to store user data; an initialization register configured to store the first initial data or update the second initial data in whole or in part; and control logic configured to perform a read operation, a program operation, or an erase operation using the initial data stored in the initialization register.

Non-volatile memory device, storage device including the same, and operating method thereof

A non-volatile memory device includes a first and a second memory regions including first and second memory cells and first and second analog circuits, respectively; a control logic circuit determining on/off states of the analog circuits, and converting an external power supply voltage into an internal operating voltage for operation of each of the memory cells; and input/output circuit selecting an input/output memory region for performing input/output of data using the internal operating voltage, wherein input/output of data for the first and second memory cells are sequentially performed, and at least one of the each of the first and second analog circuits are turned on together while the input/output of data for the first memory cells is performed.

Non-volatile memory device

An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.

Operation method of nonvolatile memory device and storage device

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Hwaseong-si, South Korea

Dongjin Shin