Skhynix Inc.

Donghyun Woo

Yun-Hui Yang

Sung-Kun Park

Pyong-Su Kwag

Cha-Young Lee

Young-Jun Kwon

Ho-Ryeong Lee

Min-Ki Na

Jong-Chae Kim

Yeounsoo Kim

An image sensing device is provided to include a substrate, a photoelectric conversion region disposed in the substrate and configured to generate photocharges in response to incident light, a floating diffusion (FD) region disposed in the substrate and configured to store the photocharges generated in the photoelectric conversion region, and first and second transfer gates having portions disposed to overlap each other and configured to transmit the photocharges from the photoelectric conversion region to the floating diffusion (FD) region.

Image sensing device

An image sensor includes a substrate and first and second transfer gates. The substrate includes not only a photodiode in which photocharges corresponding to the amount of incident light are accumulated, but also a floating diffusion (FD) region in which the photocharges are received and accumulated. The first and second transfer gates transmit the photocharges from the photodiode to the floating diffusion (FD) region. At least some parts of the first transfer gate are formed to overlap with the second transfer gate.

A stack-type image sensor include a first substrate comprising a photoelectric conversion element and a storage transistor connecting the photoelectric conversion element to a charge storage element; and a second substrate comprising a transfer transistor connecting the charge storage element to a floating diffusion, wherein the first substrate and the second substrate are stacked. The charge storage element comprises: a first electrode and a second electrode positioned adjacent to the first electrode and having a sidewall facing a sidewall of the first electrode, wherein the first electrodes and the second electrodes comprise at least one bonding pad formed in the first or second substrate; and a dielectric layer inserted between the sidewall of the first electrode and the sidewall of the second electrode, which face each other.

Stack-type image sensor

An image sensor includes a substrate including an active pixel and a test pattern, wherein the test pattern is located adjacent to the active pixel, wherein the active pixel comprises a first photodiode, a floating diffusion, a first channel provided between the first photodiode and the floating diffusion, and a first transfer gate electrode provided over the first channel, wherein the test pattern comprises a first test photodiode, a test floating diffusion, a second channel provided between the first test photodiode and the test floating diffusion, a first test transfer gate electrode provided over the second channel, and a first contact plug connected to the first test photodiode, and wherein the first test photodiode, the test floating diffusion, the second channel, and the first test transfer gate have substantially the same alignment errors as the first photodiode, the floating diffusion, the first channel, and the first transfer gate electrode, respectively.

Image sensor having test pattern and offset correction method thereof

An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.

Image sensor including vertical transfer gate

An image sensor may include a substrate having a photoelectric conversion element and a grid pattern formed over the substrate and having a flat upper surface, a first side surface, and a second side surface, wherein the first side surface and the second side are located opposite to each other. A first internal angle is formed between the flat upper surface and the first side surface, a second internal angle is formed between the flat upper surface and the second side surface, and the first internal angle may be smaller than the second internal angle.

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Seoul, South Korea

Donghyun Woo