Samsung Electronics Co., Ltd.

Donghyi Koh

Junggil Yang

Minju Kim

An integrated circuit device including a substrate including first and second device regions; a first fin active region on the first device region; a second fin active region on the second device region; an isolation film covering side walls of the active regions; gate cut insulating patterns on the isolation film on the device regions; a gate line extending on the fin active regions, the gate line having a length limited by the gate cut insulating patterns; and an inter-region insulating pattern on the isolation film between the fin active regions and at least partially penetrating the gate line in a vertical direction, wherein the inter-region insulating pattern has a bottom surface proximate to the substrate, a top surface distal to the substrate, and a side wall linearly extending from the bottom to the top surface.

Integrated circuit device including N-channel metal-oxide semiconductor (NMOS) transistor region and a P-channel metal-oxide semiconductor (PMOS) transistor region

Growing community of inventors

Hwaseong-si, South Korea

Donghyi Koh