Samsung Electronics Co., Ltd.

Donghwa Lee

Jaemin Jung

Changheon Cheon

A method of manufacturing a semiconductor device is provided including the operations of forming a peripheral circuit structure including a substrate, circuit elements on the substrate, and interconnections on the circuit elements. The method includes forming a plate layer on the peripheral circuit structure, forming a preliminary stack structure by alternately stacking sacrificial layers and interlayer insulating layers on the plate layer in a first direction perpendicular to an upper surface of the plate layer, and patterning the stack structure to form a stepped structure to form patterned sacrificial layers and patterned interlayer insulating layers. The method includes forming deposition inhibition layers on exposed surfaces of the patterned interlayer insulating layers, forming selective deposition layers on exposed surfaces of the patterned sacrificial layers, forming channel structures penetrating through the preliminary stack structure in the first direction, and contacting the plate layer.

Methods of manufacturing semiconductor devices

Disclosed is a method of designing and fabricating a semiconductor chip including a fuse cell. The method may include preparing a semiconductor chip layout, the semiconductor chip layout including a main chip layout and a scribe lane layout enclosing the main chip layout; disposing a fuse layout in the scribe lane layout; setting the main chip layout as a first data preparation region; setting the scribe lane layout and the fuse layout as a second data preparation region; obtaining a first resulting structure and a second resulting structure, respectively, by performing a data preparation process on the first and second data preparation regions; merging the first and second resulting structures to generate mask data; manufacturing a photomask, based on the mask data; and forming semiconductor chips on a wafer using the photomask.

Growing community of inventors

Suwon-si, South Korea

Donghwa Lee