Samsung Electronics Co., Ltd.

DongHun Kwak

Kitae Park

Hyun-Wook Wook Park

Dongkyo Shim

An operating method of a nonvolatile memory device including a plurality of strings each string including at least two pillars penetrating wordlines disposed at different layers. The operating method includes applying unselected wordline voltages to unselected wordlines, and applying a selected wordline voltage to a selected wordline, and the unselected wordline voltage applied to the same layer as a layer of the selected wordline is different from the unselected wordline voltage applied to a different layer than the layer of the selected wordline.

Nonvolatile memory device, a storage device having the same and an operating method of the same

A storage device is provided. The storage device includes a memory controller and at least one nonvolatile memory device including memory blocks having a pipe-shaped bit cost scalable (PBiCS) structure. Each of the memory blocks penetrates word lines stacked on a substrate in the form of plates and includes a first pillar, a second pillar, and a back-gate. The second pillar includes a semiconductor layer, an insulating layer, and a charge storage layer. The back-gate includes a pillar connection portion to connect the first and second pillars to each other and is disposed between the substrate and the word lines. The memory controller includes an adjacent cell management unit configured to control the at least one nonvolatile memory device such that a program operation, an erase operation or a read operation is performed on memory cells adjacent to the back-gate, unlike the other memory cells.

Three-dimensional memory device and operating method of a storage device including the same

A write method of a storage device includes determining whether to perform a coarse program operation based on information about memory cells of a memory device, in response to a determination that the coarse program operation is to be performed, programming data in the memory device by performing the coarse program operation and a fine program operation, and in response to a determination that the coarse program operation is not to be performed, programming data in the memory device by performing the fine program operation.

Storage device and a write method thereof

Disclosed is a method reading memory device information from a nonvolatile memory device having a three-dimensional (3D) memory cell array including an original plane storing data associated with the information in a first group of memory cells and a replica plane storing the data in replica in a second group of memory cells. The method applies a selection read voltage to a selected word line connected to first and second groups of memory cells while applying a non-selection read voltage to other word lines, and simultaneously reading first data from the first group of memory cells and second data from the second group of memory cells.

Growing community of inventors

Gyeonggi-do, South Korea

DongHun Kwak