Samsung Electronics Co., Ltd.

Donghoon Won

Junyeong Heo

Yeongkwon Ko

Yun-Rae Cho

Unbyoung Kang

Hyunggil Baek

Seunghun Shin

Sundae Kim

Namgyu Baek

Jae-Eun Lee

Jaeeun Lee

There is provided a method of dicing a semiconductor wafer, which includes providing a semiconductor substrate having a plurality of integrated circuit regions on an active surface of the semiconductor substrate, a dicing regions provided between adjacent integrated circuit regions of the plurality of integrated circuit regions, and a metal shield layer provided on the active surface across at least a portion of the adjacent integrated circuit regions and the dicing region, forming a modified layer by irradiating laser to an inside of the semiconductor substrate along the dicing region, propagating a crack from the modified layer in a direction perpendicular to a major-axial direction of the metal shield layer by polishing an inactive surface opposing the active surface of the semiconductor substrate and forming semiconductor chips by separating the adjacent integrated circuit regions, respectively, based on the crack propagating from the modified layer.

Semiconductor substrate and method of dicing the same

A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposing each other, and a side surface between the first and second surfaces, and including a device region on the first surface a wiring structure on the surface of the semiconductor substrate, and having a dielectric layer and a metal wiring in the dielectric layer and electrically connected to the device region, and an insulating material layer on a side surface of the wiring structure and having a side surface connected to the side surface of the semiconductor substrate. The side surface of the insulating material layer has a first wave-shaped pattern in which concave-convex portions are repeated in a direction of the wiring structure that is perpendicular to the semiconductor substrate, and the side surface of the semiconductor substrate has a second wave-shaped pattern in which concave-convex portions are repeated in the direction.

Semiconductor device and method of fabricating the same

A semiconductor package is provided including a first semiconductor chip stack and a second semiconductor chip stack that are adjacent to each other. The first semiconductor chip stack includes a plurality of first semiconductor chips and a plurality of first adhesive layers. The second semiconductor chip stack includes a plurality of second semiconductor chips and a plurality of second adhesive layers. Each of the first semiconductor chips includes a first cell region and a first scribe lane that surrounds the first cell region. Each of the second semiconductor chips includes a second cell region and a second scribe lane that surrounds the second cell region. An area of the first scribe lane is greater than an area of the second scribe lane. The plurality of first adhesive layers and the plurality of second adhesive layers have the same coefficient of thermal expansion.

Semiconductor package including a first semiconductor stack and a second semiconductor stack of different widths

Semiconductor device including an insulating material layer with concave-convex portions

A method of dividing a substrate includes preparing a substrate including a crystalline semiconductor layer having a scribe lane region and device regions, a dielectric layer on the crystalline semiconductor layer, and a partition structure in physical contact with the dielectric layer and provided on the scribe lane region of the crystalline semiconductor layer, forming an amorphous region in the crystalline semiconductor layer, and performing a grinding process on the crystalline semiconductor layer after the forming of the amorphous region. The amorphous region is formed in the scribe lane region of the crystalline semiconductor layer.

Substrate, method of sawing substrate, and semiconductor device

Growing community of inventors

Asan-si, South Korea

Donghoon Won