Samsung Display Co., Ltd.

Donghoon Shin

Jaehyun Lee

Jongmoo Huh

Sunmi Kang

Woogeun Lee

Kwangsoo Lee

Seulki Kim

Youngjae Jeon

Hyunseong Kang

Seungsok Son

Seokhwan Bang

Jiyun Hong

Joongeol Kim

Seungrae Kim

Kapsoo Yoon

Jongin Kim

Hongro Lee

Junewhan Choi

Kisu Jin

Kwanghyun You

Kyongho Park

Raechul Park

A display apparatus includes a substrate including a display area and a peripheral area adjacent to the display area, a thin-film transistor located in the display area of the substrate and including a semiconductor layer and a gate electrode overlapping a channel region of the semiconductor layer, a conductive layer disposed between the substrate and the semiconductor layer and including a first electrode located in the display area of the substrate and a pad electrode located in the peripheral area of the substrate, and a first insulating layer disposed between the conductive layer and the semiconductor layer and having a first opening that exposes at least a portion of an upper surface of the pad electrode.

Display apparatus and method of manufacturing the same

A method of manufacturing a display apparatus, the method including forming an amorphous silicon layer on a substrate, placing the substrate with the amorphous silicon layer in a chamber having a window on an upper portion thereof, and directing a laser beam toward the window, and converting the amorphous silicon layer into a polycrystalline silicon layer by irradiating the amorphous silicon layer with the laser beam while nitrogen gas is discharged from a nozzle located adjacent to an opening of a stabilizing room, wherein the laser beam reaches the amorphous silicon layer on the substrate after passing through the window, the stabilization room, and the opening of the stabilization room, wherein the opening faces the substrate.

Laser annealing apparatus and method of manufacturing display apparatus using the same

Growing community of inventors

Yongin-si, South Korea

Donghoon Shin