Samsung Electronics Co., Ltd.

Donggyun Han

Hyosan Lee

Jungwoo Song

Sang-Jun Lee

Changki Hong

Sangjun Choi

Yongjun Kim

Jaerok Kahng

Woosung Han

Hyungho Ko

Keeshik Park

A memory device includes a substrate including active areas and isolation areas, trenches in the isolation areas, active patterns in the active areas, the active patterns protruding from the substrate, isolation layers filling the trenches, gate trenches crossing the active patterns and the isolation layers, and gate line stacks filling the gate trenches, a first width of the gate trench in the isolation layer being greater than a second width of the gate trench in the active pattern.

Memory device having buried gate and method of fabricating the same

An apparatus and method for removing photoresist from a substrate, which includes treating the photoresist with a first reactant to cause swelling, cracking or delamination of the photoresist, treating the photoresist with a second reactant to chemically alter the photoresist, and subsequently removing the chemically altered photoresist with a third reactant. In one example, the first reactant is supercritical carbon dioxide (SCCO), the second reactant is ozone vapor, and the third reactant is deionized water.

Apparatus and method for removing photoresist from a substrate

Growing community of inventors

Yongin-si, South Korea

Donggyun Han