Huawei Technologies Co., Limited

Dongfang Shan

Jun Xu

Yuangang Wang

Liang Shi

Qiao Li

Hsing Mean Sha

Chun Xue

Yejia Di

A flash memory controller refreshes memory blocks in a flash memory device by setting different refresh cycles for individual memory blocks in the flash memory device. The flash memory controller records a number of erase operations performed on each memory block of the flash memory device. Upon detecting that a bit error rate of a memory block is greater than a preset threshold, the flash memory controller determines a refresh cycle for the memory block based on recorded number of erase operations performed on the memory block, and then refreshes the memory block according to the refresh cycle.

Method and apparatus for refreshing flash memory device

A method for accessing a flash memory device and a flash memory device. After receiving a write request for an address, a flash memory controller obtains an indicator of the address, where the indicator indicates a last access type of the address, which might be a write operation or a read operation. When determining the indicator indicates a write operation, which means the access type for the address is normally write operation, to save time, the flash memory controller perform a fast-write operation on the address, when the indicator indicates a read operation, which means there might be plenty of read operations on the address, to facilitate future read operation, the controller performs a slow-write operation on the address.

Method and apparatus for accessing flash memory device

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Shenzhen, China

Dongfang Shan