Samsung Electronics Co., Ltd.

Dongeun Shin

Jonghwa Kim

Wonhee Cho

Dong-Young Seo

Alain Tran

Young Bong Kim

Wansoo Choi

Jongwon Lee

Youngwook Kim

Dohyeon Park

Kihwan Nam

A method of operating a storage device is provided. The method includes updating metadata to a metadata buffer; writing journal data corresponding to the metadata into a journal buffer; determining a composition ratio between the journal data and the metadata, based on a number of valid journals involved in a replay of the metadata among the journal data; composing a meta write data in a meta write buffer, the meta write data including the metadata from the metadata buffer and the journal data from the journal buffer according to the determined composition ratio; and programming the meta write data composed in the meta write buffer into a non-volatile memory device.

Storage device using dynamic journaling and operation method thereof

An operating method of a memory controller configured to control a memory device including memory blocks each for storing a plurality of pages is provided. The operating method includes transferring a program command to the memory device based on a write request from a host, updating a valid page bitmap representing validity of a plurality of pages based on valid page information received from the memory device, calculating a fragmentation ratio representing a segmentation degree between at least one valid page and at least one invalid page of a memory block based on the valid page bitmap, determining source blocks among the memory blocks in ascending order of fragmentation ratios, and performing garbage collection on the source blocks.

Method, memory controller and storage device to perform garbage collection based on fragmentation ratio of blocks

Each of a plurality of memory blocks of a nonvolatile memory device is divided into two or more wordline groups having different characteristics. A write command for at least two memory blocks among the plurality of memory blocks is received. During a first partial time interval included in an entire write time interval for two or more memory blocks, a data write operation is performed on a wordline group included in one memory block among the two or more memory blocks in response to a reception of an address for the one memory block. During a second other partial time interval included in the entire write time interval, a data write operation is performed on wordline groups included in the two or more memory blocks in response to a reception of an address for the two or more memory blocks.

Method of writing data in nonvolatile memory device and nonvolatile memory device performing the same

A memory controller with improved data reliability and a memory system including the same are provided, and an operating method of the memory controller includes, based on deterioration information indicating a location of a deterioration region in the plurality of blocks, with respect to data stored in a first block, copying user data of a RAID to a normal region other than the deterioration region of a second block; copying parity data of the RAID among the data stored in the first block to the deterioration region of the second block; and updating mapping information between data constituting one RAID and transmitting the mapping information to the memory device. The deterioration information includes information regarding one or more word lines at specific locations included in the deterioration region in the plurality of blocks.

Memory controller with improved data reliability and memory system including the same

A storage device includes a memory device including a plurality of memory cells respectively storing data having a plurality of bits, and a memory controller including an operation block including a plurality of unit circuits executing a predetermined function, and a core block executing a control operation on the plurality of memory cells in response to a command from a host. The core block selects at least portions of the plurality of unit circuits to determine selection unit circuits, and generates a control command specifying an operation order of the selection unit circuits. In the operation block, the selection unit circuits operate by the operation order to determine a control voltage required for the control operation, and store the control voltage in at least one of the memory controller or the memory device.

Memory controller and storage device including the same

A storage device includes a nonvolatile memory device and a controller. The nonvolatile memory device includes a plurality of memory blocks, each of which includes string selection transistors connected to a plurality of string selection lines, ground selection transistors connected to a plurality of ground selection lines, and memory cells connected to a plurality of word lines. The controller reads valid data groups of a first memory block and writes the read valid data groups in a second memory block, during a read reclaim operation. The controller assigns locations of the second memory block, at which the valid data groups are written, based on read counts of the valid data groups.

Storage device and operating method thereof

A method of operating a memory system includes; storing data in a buffer region of the nonvolatile memory, later issuing a migration request directed to the data stored in the buffer region and executing a migration operation to move the data from buffer region to a main region of the nonvolatile memory device. Upon completion of the migration operation, marking a migration operation completion time, and after an initial verify shift (IVS) time has elapsed following the migration operation completion time, updating a mapping table associated with the data in view of the executed migration operation.

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Seoul, South Korea

Dongeun Shin