Jiangsu Leuven Instruments Co. Ltd

Dongdong Hu

Kaidong Xu

Na Li

Haiyang Liu

Shiran Cheng

Song Guo

Xiaobo Liu

Lu Chen

Zhihao Wu

Dongchen Che

Jun Zhang

Xuedong Li

Ziming Liu

Zhongyuan Jiang

Juebin Wang

Hushan Cui

Dajian Han

Zhiwen Zou

Yaoyao Zhang

Yonggang Hou

Zhiyou Zhu

Hongyue Sun

Chengyi Wang

Zhaochao Chen

Yong Qiu

Huaidong Zhang

Huiqun Ren

Xiaoli Shi

Xiaolei Li

A Faraday shielding device includes an electrically conductive ring and a plurality of electrically conductive petal-shaped assemblies radially and symmetrically on the periphery of the electrically conductive ring. Each electrically conductive petal-shaped assembly includes a plurality of electrically conductive plates and connecting capacitors; the electrically conductive plate are at intervals along the radial direction; a connecting capacitor is between every two adjacent electrically conductive plates. Each connection capacitor includes upper and lower electrode plates, the lower end surface of each upper electrode plate and/or the upper end surface of each lower electrode plate has an insulating coating, the lower end surface of the upper electrode plate is connected to the upper end surface of the lower electrode plate, the upper electrode plate is electrically connected to one of the adjacent electrically conductive plate, and the lower electrode plate is electrically connected to the other of the adjacent electrically conductive plates.

Plasma processing system and multi-section faraday shielding device thereof

An ion source baffle includes a baffle body, wherein the baffle body is of a hollow structure; baffles are symmetrically fixedly arranged on an inner wall of the baffle body; the baffles extend towards the center of the baffle body; and in the direction from the inner wall of the baffle body towards the center of the baffle body, a shielding area formed by the baffles is reduced. The ion etching machine includes a discharge chamber, a reaction chamber and an ion source baffle, wherein the ion source baffle is clamped on an inner wall of the discharge chamber; and plasma sequentially passes through the ion source baffle and an ion source grid assembly. In the ion etching machine, the ion source baffle is additionally provided, such that after plasma is shielded by the ion source baffle.

Ion source baffle, ion etching machine, and usage method therefor

Disclosed is a ceramic air inlet radio frequency connection type cleaning device, comprising an etching system, a cleaning system, a power supply control device and a radio frequency cleaning mechanism, wherein the power supply control device is connected to the etching system and the cleaning system and is used for power supply switching; the etching system is connected to two single three-dimensional coil bodies of a three-dimensional coil by means of two lines of a power distribution box so as to etch a wafer in a chamber; and the cleaning system enables the lower surface of a top ceramic air inlet nozzle connected to the radio frequency cleaning mechanism to generate high negative pressure by connecting a radio frequency to the radio frequency cleaning mechanism, such that plasmas directly bombard the lower surface of the top ceramic air inlet nozzle.

Ceramic air inlet radio frequency connection type cleaning device

An anti-breakdown ion source discharge apparatus includes a discharge chamber, a coil support, an upper insulation fixing block, a discharge component and an ion source chamber. The discharge component includes a radio-frequency coil, a lower conductive connector and an upper conductive connector. The radio-frequency coil is fixed on a coil support base; the coil support base is clamped on an inner wall of the bottom of the ion source base; the coil support is along the circumference of the coil support base; the radio-frequency coil passes through the coil support; the upper conductive connector passes by the radio-frequency coil and the coil support base from the outside of the radio-frequency coil and extends into the bottom of the discharge chamber; and the upper insulation fixing block is sleeved over the upper conductive connector and is fixed on the inner wall of the bottom of the ion source chamber.

Anti-breakdown ion source discharge apparatus

A reaction chamber lining including an annular side wall and a flange arranged on an upper portion of the side wall. An end face of the flange extends from the side wall in a radial direction, an outer edge of the flange extends in the radial direction to form fixing flanging parts, and a hole is in each of the fixing flanging parts. The side wall includes a rectangular slot, and a position of the rectangular slot corresponds to a position of a robotic arm access hole in a side wall of a reaction chamber. The side wall includes through holes and honeycomb-shaped apertures. A face joined to the bottom of the side wall includes a disc extending inwards in the radial direction, an extending end of the disc is fitted with an outer edge of an electrode assembly. A plurality of circles of slotted holes are in the disc.

Reaction chamber lining

A multilayer magnetic tunnel junction etching method and an MRAM device. A wafer is processed according to particular steps without interrupting vacuum. A reactive ion plasma etching chamber () and an ion beam etching chamber () are used separately at least one time. The processing of a multilayer magnetic tunnel junction is always in a vacuum environment, thereby avoiding the impact of an external environment on etching. By means of the process of combining etching and cleaning, a device structure maintains good steepness, and the metal contamination and damage of a magnetic tunnel junction film structure are significantly decreased, thereby greatly increasing the performance and reliability of a device. In addition, use of both the ion beam etching chamber () and the reactive ion plasma etching chamber () solves the technical problem of an existing single etching method, and increases production efficiency and etching process precision.

Multilayer magnetic tunnel junction etching method and MRAM device

Disclosed is method for etching a magnetic tunnel junction. An etching apparatus used comprises a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a film coating chamber and a vacuum transport chamber. The method comprises multiple performances of the steps of reactive ion and plasma etching, ion beam etching and film coating. Multiple performances of entry into and exit from the chambers are required during the process, and the delivery between the chambers is performed under vacuum.

Method for etching magnetic tunnel junction

An etching uniformity regulating device and method. The device comprises an inductor and a capacitor connected in parallel. One end of the etching uniformity regulating device is connected to a built-in ring located at the edge of an electrostatic chuck of an etching machine, and the other end is grounded. The purpose of controlling the edge electric field is achieved by regulating a capacitance of the capacitor, so as to regulate the etching rate of the edge, thereby achieving etching uniformity.

Etching uniformity regulating device and method

The present invention provides a rotatable faraday cleaning apparatus and a plasma processing system, said apparatus comprising a cavity cover, a motor, an eccentric wheel, a long-petalled assembly, a coupling window, a gas intake nozzle, a connecting rod, a short-petalled assembly, a first sector-shaped conductor, and a second sector-shaped conductor; the cavity cover is assembled on a reactor cavity main body, the coupling window is mounted on the cavity cover, the gas intake nozzle is provided on the coupling window, the first sector-shaped conductor is assembled on the gas intake nozzle, the second sector-shaped conductor is assembled on the gas intake nozzle, the long-petalled assembly is assembled on the gas intake nozzle, the short-petalled assembly is assembled on the gas intake nozzle, the connecting rod is assembled on the long-petalled assembly, the eccentric wheel is assembled on the connecting rod, and the motor is mounted on the eccentric wheel.

Rotatable faraday cleaning apparatus and plasma processing system

There is provided a method for etching magnetic tunnel junction, using an etching apparatus including a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a coating chamber, and a vacuum transmission chamber. The method completes the etching of the magnetic tunnel junction in the reactive ion plasma etching chamber, performs ion beam cleaning in the ion beam etching chamber, and performs coating protection in the coating chamber. The transmission among the respective chambers is all in a vacuum state. The invention can overcome the bottleneck in the production of high-density small devices, while greatly improving the yield, reliability and production efficiency of the devices.

Etching method for magnetic tunnel junction

The present invention provides a device for blocking plasma backflow in a process chamber to protect an air inlet structure, comprising an air inlet nozzle tightly connected to an air inlet flange. The inner cavity of the air inlet nozzle is provided with an air inlet guide body, wherein the air inlet guide body has an upper structure, a middle structure, and a lower structure, the upper, middle, and lower structures are an integrated structure, the upper, middle, and lower structures are all cylindrical, the cross-sectional diameter of the upper structure is smaller than that of the middle structure, a gas gathering area is arranged between the middle structure and the lower structure, and the middle structure and the lower structure are connected by the gas gathering area.

Device for blocking plasma backflow in process chamber to protect air inlet structure

A semiconductor device manufacturing method, wherein the etching apparatus used includes a sample loading chamber (), a vacuum transition chamber (), a reactive ion plasma etching chamber (), an ion beam etching chamber (), a film coating chamber (), and a vacuum transport chamber (). Without interrupting the vacuum, reactive ion etching is first adopted to etch to an isolation layer (); then, ion beam etching is performed to etch into a fixed layer () and stopped near a bottom electrode metal layer (), leaving only a small amount of the fixed layer (); subsequently, reactive ion etching is adopted to etch to the bottom electrode metal layer (); and finally, ion beam cleaning is performed to remove metal residues and sample surface treatment, and coating protection is performed.

Semiconductor device manufacturing method

Disclosed in the present application is an inductively coupled plasma treatment system. Said system switches the connection between a radio frequency coil and a faraday shielding device by means of a switch switching radio frequency power. When a radio frequency power supply is connected to the radio frequency coil by means of a matched network, the radio frequency power is coupled into the radio frequency coil to perform plasma treatment process. When a radio frequency power supply is connected to a faraday shielding device by means of a matched network, the radio frequency power is coupled into the faraday shielding device to perform cleaning process on a dielectric window and an inner wall of a plasma treatment cavity.

Inductively coupled plasma treatment system

Provided are a faraday cleaning device and a plasma processing system, the device comprising a reaction chamber, a bias electrode, a wafer, a chamber cover, a coupling window, an air inlet nozzle, a vertical coil, and a faraday layer, wherein the coupling window is installed at the upper end face of the chamber cover, the chamber cover is installed at the upper end face of the reaction chamber, the bias electrode is assembled inside the reaction chamber, the wafer is installed at the upper end face of the bias electrode, the air inlet nozzle is assembled inside the coupling window, the faraday layer is installed at the upper end face of the coupling window, and the vertical coil is assembled at the upper end face of the faraday layer.

Faraday cleaning device and plasma processing system

An ion beam etching system includes an etching cavity, an etching electrode, and an electrode displacement apparatus used for enabling the electrode to change a working position in the etching cavity. The electrode displacement apparatus includes a dynamic sealing mechanism, a dynamic electrode balance counterweight mechanism, an electrode displacement transmission mechanism, and an electrode displacement driving mechanism. The etching cavity includes a cavity and a cavity cover connected with the cavity. The cavity is of an irregular shape. The cavity includes a partial cylindrical body, a side plate, a tapered transition portion, and a bottom plate. The partial cylindrical body is laterally sealed by means of the side plate. The bottom plate is connected to an end of the partial cylindrical body by means of the tapered transition portion and seals the end of the partial cylindrical body.

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Xuzhou, China

Dongdong Hu