Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Sk Chemicals Co., Ltd.

Raphas Co., Ltd.

Dongchul Shin

Tae Hyung Kim

Younghwan Park

Jongseob Kim

Jaejoon Oh

Junhyuk Park

Sunkyu Hwang

Joonyong Kim

Soogine Chong

Injun Hwang

Hyunsup Lee

Kangyoung Lee

Jaejoong Kwon

Boram Kim

Junhee Choi

Jiwon Lee

Joohun Han

Nakhyun Kim

Junghun Park

Yongseok Kim

Gyehwan Lim

Hun-Taek Kim

Eunsung Lee

Jangyeol Yoon

Joosung Kim

Ho Chul Shin

Keun-Ho Ryu

Yun-Sun Nam

Jung Dong Kim

Do Hyeon Jeong

Minchul Yu

Joo Han Lee

Jun-Sung Park

Booyong Lee

Eun Jin An

Hyelan Kim

Sang-Wook Hwang

Gwan-Young Kim

A display apparatus includes a display panel in which a penetrating opening portion is defined, the display panel including a first display portion in which a first pixel is arranged, a second display portion in which a second pixel is arranged, a connection portion extending in a first direction to connect the first display portion to the second display portion and including, at a central portion thereof, a crack inducing pattern extending in a second direction intersecting the first direction, and a encapsulation layer disposed on the first display portion, the second display portion, and the connection portion, wherein the crack inducing pattern includes a first groove at a central portion of the crack inducing pattern and a first pattern layer disposed on the first groove and including a first tip protruding toward a center of the first groove.

Display apparatus

Provided are nanorod light emitting diodes (LEDs), display apparatuses, and manufacturing methods thereof. The nanorod LED includes a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body, a nitride light emitting layer provided on the pyramidal structure, and a second-type semiconductor layer provided in the nitride light emitting layer.

Nanorod LED, display apparatus including the same, and method of manufacturing the nanorod LED

A display panel including a penetration portion includes: a substrate including a central area and an outer area extending from an outer side of the central area, the central area including a first central area and a second central area spaced apart from the first central area by the penetration portion therebetween; and a display element arranged on the substrate and including a first display element and a second display element, the first display element overlapping at least a portion of the first central area, and the second display element overlapping at least a portion of the second central area. At least one of an edge of the central area and an edge of the outer area defines at least a portion of the penetration portion, and a thickness of the substrate in the outer area is less than a thickness of the substrate in the central area.

Display panel, display apparatus, and method of manufacturing the display apparatus

A display apparatus includes: a substrate including a first surface, a second surface opposite the first surface, a display area defined on the first surface, and a non-display area defined on the second surface; a plurality of display elements at the display area on the first surface of the substrate; a driving circuit on the second surface and overlapping with the display area of the substrate; a first conductive pattern on the second surface of the substrate; and a second conductive pattern on the first surface of the substrate and connected to the first conductive pattern via a contact hole extending through the substrate. A surface roughness of the second surface of the substrate is greater than a surface roughness of the first surface of the substrate.

Display apparatus and method of manufacturing the same

Provided is a high electron mobility transistor including: a channel layer comprising a 2-dimensional electron gas (2DEG); a barrier layer on the channel layer and comprising first regions and a second region, the first regions configured to induce the 2DEG of a first density in portions of the channel layer and the second region configured to induce the 2DEG of a second density different from the first density in other portions of the channel layer; source and drain electrodes on the barrier layer; a depletion formation layer formed on the barrier layer between the source and drain electrodes to form a depletion region in the 2DEG; and a gate electrode on the barrier layer. The first regions may include a first edge region and a second edge region corresponding to both ends of a surface of the gate electrode facing the channel layer.

High electron mobility transistor and method of manufacturing the same

Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.

Field effect transistor including gradually varying composition channel

A semiconductor device includes a channel layer including a channel; a channel supply layer on the channel layer; a channel separation pattern on the channel supply layer; a gate electrode pattern on the channel separation pattern; and an electric-field relaxation pattern protruding from a first lateral surface of the gate electrode pattern in a first direction parallel with an upper surface of the channel layer. An interface between the channel layer and the channel supply layer is adjacent to channel. A size of the gate electrode pattern in the first direction is different from a size of the channel separation pattern in the first direction. The gate electrode pattern and the electric-field relaxation pattern form a single structure.

Semiconductor device and method of fabricating the same

A high electron mobility transistor (HEMT) includes a channel layer, a plurality of barrier layers, and a p-type semiconductor layer. The barrier layers have an energy band gap greater than that of the channel layer. A gate electrode is arranged on the p-type semiconductor layer. A source electrode and a drain electrode are apart from the p-type semiconductor layer and the gate electrode on the barrier layers. Impurity concentrations of the barrier layers are different from each other in a drift area between the source electrode and the drain electrode.

High electron mobility transistor

A semiconductor thin film structure may include a substrate, a buffer layer on the substrate, and a semiconductor layer on the buffer layer, such that the buffer layer is between the semiconductor layer and the substrate. The buffer layer may include a plurality of unit layers. Each unit layer of the plurality of unit layers may include a first layer having first bandgap energy and a first thickness, a second layer having second bandgap energy and a second thickness, and a third layer having third bandgap energy and a third thickness. One layer having a lowest bandgap energy of the first, second, and third layers of the unit layer may be between another two layers of the first, second, and third layers of the unit layer.

Semiconductor thin film structures and electronic devices including the same

A display device includes a substrate having a top surface, a bottom surface, and a first contact hole passing through the top surface and the bottom surface; a thin film transistor disposed above the top surface and including a semiconductor layer; a display element connected to the thin film transistor; a top conductive pattern disposed between the substrate and the thin film transistor and overlapping the semiconductor layer of the thin film transistor; a bottom conductive pattern disposed on the bottom surface and connected to the top conductive pattern through the first contact hole; and a bottom planarization layer disposed on the bottom surface, the bottom planarization layer disposed on the bottom conductive pattern.

Display device with bottom conductive pattern and method of manufacturing the same

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Suwon-si, South Korea

Dongchul Shin