Electronics and Telecommunications Research Institute

Korea Advanced Institute of Science and Technology

Information and Communications University Educational Foundation

Dong Yun Jung

Chi Hoon Jun

Sang Choon Ko

Hyung Seok Lee

Jeho Na

Hyun-Gyu Jang

Eun Soo Nam

Chul Soon Park

Young Rak Park

Minki Kim

Junbo Park

Hyun Soo Lee

Sang-hyun Park

Kun Sik Park

Jong Il Won

Hyun Gyu Jang

Doo Hyung Cho

Ki Hwan Kim

Kyoung Ik Cho

Jae Jin Lee

Woojin Chang

Ho Young Kim

Myoung Sook Oh

Myungjoon Kwack

Seon Eui Hong

Jong-Moon Park

Zin-Sig Kim

Ki Chan Eun

A MOS controlled thyristor device according to the concept of the present invention includes a substrate comprising a first surface and a second surface, which face each other, gate patterns disposed on the first surface, a cathode electrode configured to cover the gate patterns, and an anode electrode disposed on the second surface, The substrate includes a lower emitter layer having a first conductive type, a lower base layer having a second conductive type on the lower emitter layer, an upper base region provided in an upper portion of the lower emitter layer and having a first conductive type, wherein the upper base region is configured to expose a portion of a top surface of the lower base layer, an upper emitter region having a second conductive type and provided in an upper portion of the upper base region, a first doped region having a first conductive type and a second doped region surrounded by the first doped region and having a second conductive type, wherein the first and second doped regions are provided in an upper portion of the upper emitter region, and a first doping pattern having a first conductive type, which is provided on one surface of the upper portion of the upper emitter region. The first doping pattern is interposed between the upper base region and the first doped region along a first direction parallel to the top surface of the substrate. The first doping pattern is configured to expose a top surface of the upper emitter region on the other surface of the upper portion of the upper emitter region. Each of the gate patterns is configured to cover portions of an exposed top surface of the lower base layer, an exposed top surface of the upper base layer, an exposed top surface of the upper emitter region, a top surface of the first doping pattern, and a top surface of the first doped region. The cathode electrode is configured to cover portions of top and side surfaces of the gate pattern, a top surface of the second doped region, and a top surface of the first doped region. The first conductive type and the second conductive type are different from each other.

MOS(metal oxide silicon) controlled thyristor device

The present invention forms an off-FET channel having a uniform and short length by using a self-align process of a method of forming and recessing a spacer, thereby enhancing the current driving capability of an off-FET and the uniformity of a device operation.

Metal oxide semiconductor-controlled thyristor device having uniform turn-off characteristic and method of manufacturing the same

Provided is a high voltage bridge rectifier. The high voltage bridge rectifier includes a supporter, a substrate on the supporter, a plurality of equivalent diode circuits mounted on the substrate, interconnection lines, and terminals. The substrate may include an insulation layer, element pads disposed on a center of the insulation layer, and terminal pads disposed on an edge of the insulation layer to surround the element pads.

High voltage bridge rectifier

The present disclosure relates to a spherical wheel motor and a control system thereof, and more particularly, the spherical wheel motor and the control system include a spherical rotor and a stator surrounding an upper surface of the rotor. The rotor includes a spherical outer shell part, a first axial magnet extending in a horizontal direction in the outer shell part, a second axial magnet extending in the horizontal direction and facing the first axial magnet, and a rotary magnet belt provided in a form of a belt with the first axial magnet and the second axial magnet as a central axis. The rotary magnet belt includes a plurality of first rotary magnets and a plurality of second rotary magnets arranged alternately.

Spherical wheel motor and control system thereof

A semiconductor device includes a semiconductor structure including a substrate, a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer, a first passivation pattern provided on the semiconductor structure, and first and second conductive patterns provided on the semiconductor structure and spaced from the first passivation pattern.

Semiconductor device with passivation layer for control of leakage current

Provided is a bridge diode according to an embodiment of the inventive concept. The bridge diode includes a first structure including a first lower nitride film and a first upper nitride film, which are laminated on the substrate, a second structure including a second lower nitride film and a second upper nitride film, which are laminated on the substrate, a first electrode structural body disposed on the first structure, and a second electrode structural body disposed on the second structure. The first electrode structural body includes a first electrode, a second electrode, and a third electrode, which are arranged in a clockwise direction, the second electrode structural body includes a fourth electrode, a fifth electrode, and a sixth electrode, which are arranged in a clockwise direction, the first electrode and the sixth electrode, which are connected to each other, are connected to an external circuit, the third electrode and the fourth electrode, which are connected to each other, are connected to an external circuit, and each of the second electrode and the fifth electrode is connected to the external circuit.

Bridge diode

Provided is a hybrid diode device. The hybrid diode device includes a first lower nitride layer disposed on a substrate and including a first 2-dimensional electron gas (2DEG) layer, a second lower nitride layer extending from the first lower nitride layer to the outside of the substrate and including a second 2DEG layer, a first upper nitride layer disposed on the first lower nitride layer, a second upper nitride layer disposed on the second lower nitride layer, a first cap layer disposed on the first upper nitride layer, a second cap layer disposed on the second upper nitride layer, a first electrode structure connected to the first lower nitride layer and the first cap layer; and a second electrode structure connected to the second lower nitride layer and the first electrode structure. The second lower nitride layer generates electric energy through dynamic movement.

Hybrid diode device

Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.

Electronical device

Provided is a stabilizing circuit structure using a sense field effect transistor (sense-FET). A power semiconductor module includes a depletion-mode field effect transistor (D-mode FET) and the sense FET that has same structure as the D-mode FET and varies in area. Also the power semiconductor module includes not only an enhancement-mode field effect transistor (E-mode FET), but also the stabilizing circuit including circuit elements such as a resistor, a capacitor, an inductor, or a diode.

Power semiconductor module and method for stabilizing thereof

Provided is a semiconductor device. The semiconductor device includes a substrate including a cantilever configured to generate a flow of cooling media through dynamic movement, an active area on the substrate which an electronic device is provided on, an insulation layer disposed to be spaced apart from the active area on the substrate, a lower electrode on the insulation layer, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film.

Semiconductor device

A resistive frequency mixing apparatus includes a first frequency mixer having a source follower FET, and a second frequency mixer having a common source FET. The resistive frequency mixing apparatus perform a frequency mixing of an RF depending on an LO signal to generate a down-converted IF signal when the RF signal is applied to the source follower FET and the LO signal is applied to the common source FET. Further, the resistive frequency mixing apparatus performs a frequency mixing of an IF signal depending on an LO signal through the use of the source follower FET to produce an up-converted RF signal when the IF signal is applied to the common source FET and the LO signal is applied to the common source FET.

Resistive frequency mixing apparatus and signal processing method using the same

A wireless communication module includes a plurality of monolithic millimeter-wave integrated circuits (MMICs) for signal processing attached to the top surface of a multi-layer low temperature co-fired ceramic substrate; a planar transmission line formed on the top surface of the multi-layer substrate for communications between the MMICs; a metal base attached to the bottom surface of the multi-layer substrate and having an opening to which an antenna is attached; a plurality of vias for connecting the metal base and the planar transmission line within the multi-layer substrate to establish a uniform potential on a ground plane of the multi-layer substrate; an embedded waveguide formed in the opening surrounded with the vias within the multi-layer substrate; and a planar transmission line-to-waveguide transition apparatus for the transition of waves between the planar transmission line and the embedded waveguide.

Planar transmission line-to-waveguide transition apparatus having an embedded bent stub

Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.

Method of fabricating optoelectronic integrated circuit chip

A transimpedance amplification apparatus includes a signal source for generating a current signal, a source follower stage, a common source stage and a shunt feedback resistor. The source follower stage having a source follower structure receives the current signal to reduce an impedance of the signal source. The common source stage, following the source follower stage, driven by the reduced signal source impedance, amplifies the current signal to extend a frequency bandwidth of the current signal and buffers the amplified signal with the extended frequency bandwidth thereof maintained, wherein the reduced signal source impedance serves to extend a frequency bandwidth of the common source stage. The shunt feedback resistor, which is installed between the source follower stage and the common source stage, adjusts an input DC bias of the source follower stage and increasing a transimpedance gain of the common source stage.

Transimpedance amplification apparatus with source follower structure

A broadband amplification apparatus for extending a bandwidth includes a first and a second amplifying unit for amplifying an input signal, a buffering unit and a first inductive buffer. The buffering unit disposed between the first and the second amplifying unit buffers an output signal of the first amplifying unit to thereby maintain a bandwidth of the output signal, increases a gain and returns back a portion of the buffered signal to the first amplifying unit. The first inductive buffer, which is connected to the buffer unit, enhances input impedance as a frequency increases within a predetermined range, thereby introducing little gain changes while serving to extend a bandwidth.

Growing community of inventors

Daejeon, South Korea

Dong Yun Jung