Samsung Electronics Co., Ltd.

Dong-young Jang

Yi-Tae Kim

Sung-Ho Choi

Jung-Chak Ahn

Kyung-ho Lee

Sung-hoon Oh

An image sensor according to inventive concepts includes a substrate including a first surface, a second surface opposite to the first surface, and a unit pixel having four sides; a photoelectric conversion device formed in the unit pixel; a floating diffusion region formed contacting the first surface in the unit pixel and overlapping with a center region of the photoelectric conversion device in a first direction perpendicular to the first surface; a gate electrode, in the unit pixel, overlapping with some portions of the floating diffusion region and formed along a first set of sides that comprises at least one side of the four sides; and a set of transistors, in the unit pixel, overlapping with some portions of the floating diffusion region and formed along a second set of sides that comprises at least two sides of the four sides, which are different from the first set of sides.

Image sensor

An image sensor includes a first substrate, a photodiode array, a first wiring structure, a second wiring structure, a third wiring structure and a light blocking layer pattern. The photodiode array is disposed in the first substrate. The photodiode array includes first photodiodes in a first region, second photodiodes in a second region and third photodiodes in a third region. The first wiring structure is disposed in the first region. The first wiring structure is electrically connected to the first photodiodes. The second wiring structure is disposed in the second region. The second wiring structure includes power supply wiring. The third wiring structure is disposed in the third region. The third wiring structure is electrically connected to the third photodiodes. The light blocking layer pattern is disposed on the first substrate. The light blocking layer pattern covers the third region and the fourth region.

Image sensor and methods of manufacturing the same

An image sensor includes a first photo detecting device disposed in a central region of a pixel array portion and a second photo detecting device disposed in an edge of the pixel array portion. The second photo detecting device has a full well capacity which is less than a full well capacity of the first photo detecting device. An imaging device includes the image sensor and an image signal process. The image signal processor compensates for a lens shading effect and a difference between the full well capacity of the first photo detecting device and the full well capacity of the second photo detecting device.

Growing community of inventors

Suwon-si, South Korea

Dong-young Jang