Samsung Electronics Co., Ltd.

Dong-yoon Jang

Jung-Chak Ahn

Kyung-ho Lee

Moo-Sup Lim

Wook Su Lee

Jung Chak Ahn

Young-hwan Park

Kyung-Ho Lee

Jong Eun Park

Tae-Sub Jung

Yong Jei Lee

Sang-joo Lee

Young-heub Jang

A light leakage compensating unit image sensor in a back side illumination method includes a photodiode and a storage diode, in which light input to a back side of the unit image sensor is received only by an area forming an electrode of the photodiode, and an area for forming another electrode of the photodiode and an area for forming two electrodes of the storage diode are separated from each other by a well, thereby compensating light leakage.

Light leakage compensating unit image sensors, image sensor arrays including the unit image sensors, and methods for compensating for light leakage of the image sensor arrays

A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.

Unit pixel of a CMOS image sensor

Image sensors including a semiconductor substrate, a plurality of photo detecting elements, a dielectric layer, a plurality of color filters, and a plurality of micro lenses. The photo detecting elements may be in the semiconductor substrate and may convert an incident light into an electric signal. The dielectric layer may be on the semiconductor substrate and may include a plurality of photo blocking regions on regions between the photo detecting elements. The color filters may be on the dielectric layer and may be disposed corresponding to the plurality of photo detecting elements, respectively. The micro lenses may be on the plurality of color filters and may be disposed corresponding to the plurality of photo detecting elements, respectively.

Image sensors

An image sensor includes a conductive well in a semiconductor substrate, a photo sensitive device (PSD) in the semiconductor substrate below the conductive well, the PSD and conductive well overlapping each other, and a charge transmission unit in the semiconductor substrate and adjacent to the conductive well, the charge transmission unit having a structure of a recessed gate and being positioned in a recess region of the semiconductor substrate.

Image sensor with a light receiving region and a recessed charge transmission unit and image sensing system including the same

CMOS image sensor

Growing community of inventors

Hwaseong-si, South Korea

Dong-yoon Jang