Hynix Semiconductor Inc.

Dong-Yeol Lee

Dong-Sauk Kim

Dong-Goo Choi

A method for forming a contact hole in a semiconductor device includes forming gate lines on a substrate, forming a bit line pattern by forming a bit line and a bit line hard mask in sequential order over the substrate, forming an inter-layer insulation layer having a multiple-layer structure including an etch stop layer over the substrate, forming a contact mask over the inter-layer insulation layer, performing a first etching process to etch a first portion of the inter-layer insulation layer above the etch stop layer, using the contact mask as an etch mask, and performing a second etching process to etch the etch stop layer, a second portion of the inter-layer insulation layer below the etch stop layer, and the bit line hard mask to form a contact hole exposing a portion of the bit line.

Growing community of inventors

Ichon-shi, South Korea

Dong-Yeol Lee