Bae Systems Information and Electronic Systems Integration Inc.

Retro Reflective Optics, LLC

Dong Xu

Pane-Chane Chao

Wendell Kong

Phillip M Smith

Xiaoping S Yang

Lee M Mohnkern

Robert Actis

Kirby B Nichols

Gabriel R Cueva

Wendell M T Kong

A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The improved transistor has an exceptional 14 dB gain at 110 GHz and exhibits an exceptionally high 3.5-4 V breakdown voltage, thus to provide high gain, high-power and ultra-high frequency in an ultra-short gate device.

Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device

A method for fabricating ultra-short T-gates on heterojunction field effect transistors (HFETs) comprising the steps of (a) providing a coating of three layers of resists, with polymethylmethacrylate (PMMA) with high molecular weight on the bottom, polydimethylglutarimide (PMGI) in the middle, and PMMA with low molecular weight on the top; (b) in a first exposure, exposing and developing the layers with a dose of a developer that is high enough to allow the developer to break the top PMMA but low to avoid contributing significantly to the overall dose received in the bottom PMMA layer; and (c) in a second exposure, using an exposure and developing process to define 0.03-0.05 um openings in the bottom PMMA layer.

Reproducible, high yield method for fabricating ultra-short T-gates on HFETs

A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on the gate-insulator layer.

Low-temperature-grown (LTG) insulated-gate PHEMT device and method

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Nashua, NH, United States of America

Dong Xu