Samsung Electronics Co., Ltd.

Dong-wook Shin

Hyoun-Soo Kim

Jong Heo

Se-ho Park

Sun-Tae Jung

Sun-tae Jung

Yong-beom Shin

An apparatus for forming a thin film using microwave and a method therefor are provided. The apparatus for forming a thin film on a wafer by densifying predetermined soot on a wafer, when the wafer and the soot form a sample, includes a microwave sintering furnace for sealing the sample and exposing the sample to microwave, thus sintering the sample, a sintering furnace atmosphere maker for controlling the state, being the atmosphere of air inside the microwave sintering furnace, a temperature sensor/controller for sensing a temperature inside the microwave sintering furnace, comparing the temperature with a predetermined reference temperature, and outputting an error temperature, and a microwave power source for generating microwave of a predetermined temperature with reference to the error temperature output from the temperature sensor/controller and applying the microwave to the microwave sintering furnace. It is possible to rapidly form a film of a fine and uniform structure by densification using microwave.

Apparatus for forming thin film using microwave and method therefor

An apparatus for manufacturing a silica film is provided. The apparatus includes a conveyor including a mounting unit where a plurality of wafers are loaded. The conveyor is used for moving and transferring the mounting wafers. The apparatus also includes a deposition part for generating flames to deposit silica soot on the plurality of wafers, the deposition part being located above the conveyor, and a calcination part, adjacent to the deposition part, removing water from the silica soot, and a sintering part, adjacent to the calcination part, for deifying the calcined silica soot to form a silica film. The process of manufacturing the silica film can be continuously performed, enhancing productivity.

Apparatus for manufacturing silica film

A Ge--Ga--S-based glass composition having light amplifying characteristics and an apparatus for optical communications using the glass composition are provided. The present invention includes a sulfur-poor Ge--Ga--S based host glass which includes less S than compositions on the composition line of GeS.sub.2 --G.sub.2 S.sub.3 on the ternary phase diagram of Ge--Ga--S, and a rare earth active material doped on the host glass for luminescence and light amplification. Ga of no more than about 10 mol % is included in the host glass. Also, Pr.sup.3+ ions are used as the rare earth active material. Furthermore, for stable vitrification and a blue shift of a short wavelength absorption band, a vitrification stabilizer such as Br and I is added to the host glass. Also, the present invention includes an apparatus for performing optical communications such as a light amplifier using optical fiber comprised of the glass composition including the S-poor Ge--Ga--S host glass which includes less S than a glass on a composition line of GeS.sub.2 --Ga.sub.2 S.sub.3 and the rare earth active material doped on the host glass for the light amplification.

Ge-Ga-S-based glass composition having light amplifying characteristic

A Ge--Ga--S-based glass composition for performing an optical amplification and an apparatus for optical communications using the same are provided. In the glass composition according to the present invention, an active material for performing luminescence and optical amplification operations is added to the Ge--Ga--S host glass and a transition metal ion moving the distribution of optical amplification gains is added in a range from 0.01 mole % to 0.2 mol %.

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Suwon, South Korea

Dong-wook Shin