Nvidia Corporation

Xilinx, Inc.

Xilinix, Inc.

Dong Wook Kim

Suresh Ramalingam

Thomas J McMullen

S Gabriel R Dosdos

Myung-June Lee

Kyung Mo Shin

A silicon interposer includes a plurality of patterned metal layers formed on a silicon wafer portion and a plurality of through-silicon vias extending through the silicon wafer portion. The through-silicon vias have an interdiffusion conductive element.

Through-silicon vias with metal system fill

A system and method for non-isothermal temperature cycling (also called Conduction Temperature Cycling) of a semiconductor device. The method includes inserting a semiconductor device into a testing chamber and thermally coupling the semiconductor device to a heating and cooling element via a vacuum holding component. The method further includes heating and cooling a die portion of the semiconductor device with the heating and cooling element and testing the semiconductor device for component failure caused by thermo-mechanical stress induced by the non-isothermal temperature cycling. In one embodiment, the heating and cooling comprises non-isothermal temperature cycling.

System and method for temperature cycling

An integrated circuit package is described. The integrated circuit package comprises a substrate having a plurality of sides, where each pair of adjacent sides forms a corner; a die coupled to a first surface of the substrate; a lid having a first portion positioned over the die and a plurality of foot portions, each foot portion of the plurality of foot portions being coupled to the first surface of the substrate at a corresponding corner of the substrate, where a side of the integrated circuit package above the substrate and between two associated foot portions has an opening; and a plurality of contact elements coupled to a second surface of the substrate. A method of forming an integrated circuit package is also shown.

Integrated circuit package and method of forming an integrated circuit package

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San Jose, CA, United States of America

Dong Wook Kim