Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Samsung Led Co., Ltd.

Dong Woohn Kim

Won Ha Moon

Hyun Jun Kim

Chang Hwan Choi

Jong Pa Hong

Jong Myeon Lee

Chang Hoon Choi

The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.

Nanowire light emitting device and method of manufacturing the same

There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

Light emitting device

An LED package comprises a frame having a concave portion formed in the center thereof; one or more LED chips mounted on the bottom surface of the concave portion; and a lens filled in the concave portion, the lens having an upper surface formed of continuous prismatic irregularities forming concentric circles.

Light emitting diode package and method of manufacturing the same

Growing community of inventors

Kyungki-do, South Korea

Dong Woohn Kim