Lam Research Corporation

Dong Woo Paeng

Yunsang Kim

He Zhang

Alan M Schoepp

Keith B Wells

Hyuk-Jun Kwon

A substrate processing system includes a processing chamber, a substrate support, a laser, and a collimating assembly. The substrate support is disposed in the processing chamber and is configured to support a substrate. The laser is configured to generate a laser beam. The collimating assembly includes lenses or mirrors arranged to direct the laser beam at the substrate to heat an exposed material of the substrate. The lenses or mirrors are configured to direct the laser beam in a direction within a predetermined range of being perpendicular to a surface of the substrate.

Atomic layer etch and deposition processing systems including a lens circuit with a tele-centric lens, an optical beam folding assembly, or a polygon scanner

A method for isotropically etching film on a substrate with atomic layer control includes a) providing a substrate including a material selected from a group consisting of silicon (Si), germanium (Ge) and silicon germanium (SiGe). The method includes b) depositing a sacrificial layer on the material in a processing chamber by: cooling a lower portion of the substrate; one of creating or supplying an oxidant-containing plasma in the processing chamber; and increasing a surface temperature of the substrate for a predetermined period using rapid thermal heating while creating or supplying the oxidant-containing plasma in the processing chamber. The method includes c) purging the processing chamber. The method includes d) etching the sacrificial layer and the material by supplying an etch gas mixture and striking plasma in the processing chamber.

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Albany, CA, United States of America

Dong Woo Paeng