Samsung Electronics Co., Ltd.

Hanwha L&c Corporation

Industry-university Cooperation Foundation Hanyang University

Dong-Won Shin

Dong-Hyun Kim

Nam-Hyeong Kim

Won-Jun Choi

Chang-Ho Lee

Jae-Hyun Kim

Yoo-Sang Hwang

Je-Min Park

Dae-Hwan Kim

Dae-Won Ha

Boo-deuk Kim

Sung-Ho Seo

Gon-Sub Lee

Dal-Ho Kim

Hyun-Min Seung

Jong-Dae Lee

Woo-Sik Nam

Byeong-Hyeon Lee

Won-Mi Kim

Seok-Bong Park

Su-Hwan Lee

Jae-Gun Park

Provided is a method of driving a display panel having a charge trap device and an organic light emitting diode (OLED). The charge trap device includes a nanocrystal layer. The nanocrystal layer includes nanocrystals, which are crystallized and dispersed, and a barrier layer, which buries the nanocrystals. When a program voltage is applied, charges are trapped in the nanocrystals, and the OLED emits light at a predetermined luminance with the application of a read voltage. Data signals are sequentially applied to all pixels of the display panel to express desired grayscales. The pixels of the display panel receive the read voltage and emit light at the same time.

Method of driving display panel

A method of fabricating a semiconductor memory device and a structure that forms both a resistor and an etching protection layer to reduce a contact resistance. The method of fabricating a semiconductor memory device according to the invention includes forming an insulation layer on a semiconductor substrate having a cell array region, a core region, and a peripheral region, each having at least one transistor formed therein, and forming both a first landing pad in the core region on the insulation layer and a second landing pad in the peripheral region, the first landing pad being overlapped with a part of a first conductive line. The invention reduces the contact resistance and prevents or minimizes a device failure caused by a misalignment, with the simplified process.

Semiconductor device and method for fabricating the same

A polynomial predistortion apparatus and method for compensating for a nonlinear distortion characteristic of a power amplifier is provided. The apparatus and method comprise an adaptation controller for determining polynomial coefficients by calculating an inverse nonlinear distortion characteristic of the power amplifier, and calculating complex predistortion gains for all possible amplitudes of an input signal using the determined polynomial coefficients; and a predistorter for receiving an input signal which is a combination of complex-modulated previous baseband input signal samples and current input signal samples, predistorting the input signal using the complex predistortion gains output from the adaptation controller, and outputting the predistorted input signal to the power amplifier.

Predistortion apparatus and method for compensating for a nonlinear distortion characteristic of a power amplifier using a look-up table

For fabricating lean-free stacked capacitors, openings are formed through layers of materials including a layer of support material displaced from a bottom of the openings. A respective first electrode is formed for a respective capacitor within each of the openings. The layer of support material is patterned to form support structures around the first electrodes. Masking spacers are formed around exposed top portions of the first electrodes, and exposed portions of the support material are etched away to form the support structures. Such stacked capacitors are applied within a DRAM (dynamic random access memory).

Fabrication of lean-free stacked capacitors

In a semiconductor device fabrication method and in a product formed according to the method, a photosensitive polyimide layer (PSPL) layer is applied to a semiconductor device in a manner which overcomes the limitations of the conventional approaches. The beneficial qualities of an added photoresist layer are utilized to avoid unwanted development of the underlying PSPL layer. In this manner, cracking of the PSPL layer is mitigated or eliminated, reducing the device soft error rate (SER) and increasing device yield. This is accomplished in a reliable and low-cost approach that employs standard device fabrication techniques.

Method of fabricating a semiconductor device having a photo-sensitive polyimide layer and a device fabricated in accordance with the method

Bumper beam for vehicles

A polynomial predistorter and predistorting method for predistorting a complex modulated baseband signal are provided. In the polynomial predistorter, a first complex multiplier generates first complex predistortion gains, using a current input signal and complex polynomial coefficients modeled on the inverse non-linear distortion characteristic of the power amplifier, and multiplies them by I and Q signal components of the current input signal, respectively. At least one second complex multiplier generates second complex predistortion gains using the complex polynomial coefficients and previous predistorted signals and multiplies them by I and Q signal components of the previous predistorted signals, respectively. A summer sums the outputs of the first and second complex multipliers and outputs the sum as a predistorted signal to the power amplifier.

Polynomial predistorter using complex vector multiplication

Disclosed is a bumper system including a bumper cover, an energy absorber formed of a synthetic resin material through a foam molding process, an impact beam for supporting the energy absorber, the impact beam being formed of a glass mat thermoplastic and having a &ldquo;C&rdquo;-shaped section, and a stay for connecting the impact beam to a vehicle body. Tips are formed on front upper and lower portions of the impact beam, and a web portion is formed on the impact beam between the tips. Tip insertion grooves in which the tips are inserted are formed on an inner surface of the energy absorber, and a pressure receiving surface corresponding to the web portion is formed on the inner surface of the energy absorber.

Bumper system

A method for forming a contact is provides that can minimize junction leakage. In this method, A contact hole is opened in an insulating layer to expose an impurity diffusion layer in a semiconductor substrate. A silicide layer is then selectively formed on the bottom of the contact hole, i.e., over the impurity diffusion layer. Impurity ions are then implanted into the impurity diffusion layer through the silicide layer so as to reduce contact resistance. The remainder of the contact hole is then filled with metal. Because of the presence of the silicide layer, ion implanting damages is confined to within the suicide layer, and there is no damage to the underlying impurity diffusion layer. As a result, silicon substrate defects can be minimized and a reliable junction without junction leakage can be obtained.

Method for forming a contact in a semiconductor device

Growing community of inventors

Seoul, South Korea

Dong-Won Shin