Samsung Electronics Co., Ltd.

Dong-won Kim

Dong-Gun Park

Chang-Woo Oh

Min-sang Kim

Sung-Min Kim

Kyoung-hwan Yeo

Sung-Young Lee

Ji-myoung Lee

Sung-Dae Suk

Geum-jong Bae

Eun-jung Yun

Ming Li

Dong-hun Lee

Keun-Hwi Cho

Sung-Hwan Kim

Dong-Uk Choi

Jung-Gil Yang

Byung-yong Choi

Myung-gil Kang

Myung-Gil Kang

Beom-Jin Park

Hyun-Jun Bae

Yang-Kyu Choi

Sung-min Kim

Sung-Bong Kim

Yong-Kyu Lee

Yong-kyu Lee

Jun Ho Seo

Hag-ju Cho

Keon-Yong Cheon

Young-Goan Jang

Lee-Eun Yu

Weonwi Jang

Jong-Pil Kim

Mark Stephen Rodder

Dong-Suk Shin

Jun Hyuk Seo

Sung-il Park

Tae-hoon Kim

Yool Kang

Seung-hun Lee

Dae-Won Ha

Keun-Ho Lee

Nak-jin Son

Hyun-Kwan Yu

Ju-hyun Kim

Yong-Hyun Kwon

Jae-young Park

Ju-Young Kim

Ui-hui Kwon

Chang-woo Noh

Hyung-rae Lee

Han-su Oh

Il-Ryong Kim

Young-Kwan Park

Byoung-Hak Hong

Sadaaki Masuoka

Chang-wook Jeong

Chang-Hoon Kim

Jun Seon Seo

Sung-man Whang

Choong-ho Lee

Mun-Hyeon Kim

Woong-Gi Kim

Yaoqi Dong

Toshinori Fukai

Seung-Hyun Song

Yoshinao Harada

Sung-Man Lim

Weon-Wi Jang

Mun-hyeon Kim

Keun-hwl Cho

Hye-ji Kim

Su-min Park

Kwang-Seok Lee

Sue-Hye Park

An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.

Integrated circuit devices

An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

Integrated circuit (IC) device

A semiconductor device may include a first active fin, a second active fin and a gate structure. The first active fin may extend in a first direction on a substrate and may include a first straight line extension portion, a second straight line extension portion, and a bent portion between the first and second straight line extension portions. The second active fin may extend in the first direction on the substrate. The gate structure may extend in a second direction perpendicular to the first direction on the substrate. The gate structure may cross one of the first and second straight line extension portions of the first active fin and may cross the second active fin.

Semiconductor devices with bent portions

A semiconductor device includes a first PMOS transistor, a first NMOS transistor, and a second NMOS transistor connected to an output node of the first PMOS and NMOS transistors. The first PMOS transistor includes first nanowires, first source and drain regions on opposite sides of each first nanowire, and a first gate completely surrounding each first nanowire. The first NMOS transistor includes second nanowires, second source and drain regions on opposite sides of each second nanowire, and a second gate extending from the first gate and completely surrounding each second nanowire. The second NMOS transistor includes third nanowires, third source and drain regions on opposite sides of each third nanowire, and a third gate, separated from the first and second gates, and completely surrounding each third nanowire. A number of third nanowires is greater than that of first nanowires. The first and second gates share respective first and second nanowires.

Semiconductor device

Semiconductor devices are provided. A semiconductor device includes a substrate including a device region defined by a trench in the substrate. The semiconductor device includes a plurality of fin-shaped active regions spaced apart from each other in the device region and extending in a first direction. The semiconductor device includes a protruding pattern extending along a bottom surface of the trench. Moreover, an interval between the protruding pattern and the plurality of fin-shaped active regions is greater than an interval between two adjacent ones of the plurality of fin-shaped active regions.

Semiconductor devices having fin-shaped active regions

An integrated circuit device includes a base burying insulating film covering a lower side wall of a fin-type active region on a substrate, an isolation pattern having a top surface higher than a top surface of the base burying insulating film, and a gate line covering a channel section of the fin-type active region. The gate line has an upper gate covering an upper portion of the channel section and a lower gate protruding from the upper gate toward the substrate and filling a space between a lower side wall of the channel section and an upper side wall of the isolation pattern.

Integrated circuit device

A static random access memory (SRAM) device includes a circuit element that includes a first inverter having a first load transistor and a first drive transistor and a second inverter having a second load transistor and a second drive transistor. Input and output nodes of the first inverter and the second inverter are cross-connected to each other. A first transfer transistor is connected to the output node of the first inverter, and a second transfer transistor is connected to the output nodes of the second inverter. Each of the first and second load transistors, the first and second drive transistors, and the first and second transfer transistors includes a transistor having multi-bridge channels. At least one of the first and second load transistors, the first and second drive transistors, and the first and second transfer transistors includes a transistor having a different number of multi-bridge channels from the other transistors.

Static random access memory (SRAM) device for improving electrical characteristics and logic device including the same

Method of fabricating integrated circuit devices

Growing community of inventors

Seongnam-si, South Korea

Dong-won Kim