Lg Electronics Inc.

Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Hyundai Motor Company

Electronics and Telecommunications Research Institute

Industry-University Cooperation Foundation Hanyang University

Kt Corporation

Hanwha Techwin Co., Ltd.

Other

Samsung Sdi Co., Inc.

Samsung Electro-Mechanics Co., Ltd.

Hynix Semiconductor Inc.

Yonsei University

Lg Semicon Co., Ltd.

Lg Energy Solution, Ltd.

Dong Won Kim

Jong Seok Kim

Sog Kie Hong

Dae Yun Park

Sung Min Kim

Hye Yong Park

Jun Hwa Lee

Dong Soo Lee

Jun Pyo Hong

Tae Hee Lee

Sang Sik Yoon

Hwi Chan Jang

Jin Woong Kim

Jae Won Chang

Sung Ho Choi

Hyun Woo Lee

Dong Hoon Lee

Chul Haeng Lee

Si Moon Jeon

Yong Tae Kim

Young Hwan Park

Sung Ho Kim

Won Geun Ryu

Hee Tae Lim

Kyung Hwan Kim

Jae Man Joo

Ki Ho Bang

Myung Gil Kang

Young Kwon Jun

Young Min Kim

Seung Hwan Cho

Keun Hwi Cho

Jea Gun Park

Dong Gun Kim

Sa Heum Kim

Hyun Soo Jung

Nak Cho Choi

Jae Hong Kim

Sang Woo Kim

Tae Hyun Kim

Jong Jin Park

Young Ho Kim

Kyoung Ho Ahn

Na Eun Kim

Jung Wook Moon

Seung Gyu Ryu

Hea Kyung Yoo

Chang Gyu Choi

Ki Chul Woo

Sung Ryong Kim

Byung Keol Choi

Woo Young Yang

Dae Il Hwang

Woo Ram Chung

Oh H Kwon

Young Jae Kim

Hoon Wee

Jong Moo Huh

Geum Jong Bae

Seung Il Han

Jea Yun So

Sa Kyun Rha

Dong Hyun Son

Kyung Hwan Yoo

Jae Young Jung

Soon Choul Kim

Seung Chul Park

Krishna Bhuwalka

Min Ho Jung

Woo Seok Park

Yeon Kyu Jeong

Jun Kwan Kim

Chon Ok Kim

Jeong Hoon Kim

Jong Won Park

Soon Ki Eo

Sang Gab Kim

Jin Ho Seo

Sang Wook Lee

Yoon Sung Lee

Sang Wook Hong

Jang Seok Lee

Jin Doo Kim

Byoung In Lee

Sung Gi Hur

Seung Ho Ahn

Dong Soo Kim

Young Hwan Shin

Cheol Soo Ko

Jeong Gon Song

Byung Chan Kim

Won Keun Kim

Dae Won Choi

Sang Hwa Choi

Dae Gun Jin

Won Min Lee

Gwang Jin Jung

Kyoung Han Ryu

Byoung Chan Kim

Kwan Young Chun

Disclosed are a neuron and a neuromorphic system including the same. More particularly, a neuron according to an embodiment of the present invention includes a completely depleted Silicon-On-Insulator (SOI) device whose a depletion region is controlled according to an inputted electrical signal to perform integration and leakage.

Neuron, neuromorphic system including the same

A semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.

Semiconductor device

A display device includes a display panel including a main portion, a first bent portion and a second bent portion each extending from the main portion, and a corner portion which connects the first bent portion and the second bent portion to each other and is bendable relative to the main portion. The corner portion which is bendable includes a plurality of protrusion patterns partially disconnected from each other and each bendable relative to the main portion, and each of the plurality of protrusion patterns including a display pixel.

Display device and method of providing the same

A selector according to an embodiment of the present disclosure includes a first electrode; a second electrode disposed opposite to the first electrode; an ion supply layer disposed between the first electrode and the second electrode to be on the side of the first electrode and doped with a metal, wherein the doped metal diffuses toward the second electrode; a switching layer disposed between the first electrode and the second electrode to be on the side of the second electrode, wherein the doped metal diffuses from the ion supply layer into the switching layer so that metal concentration distribution inside the switching layer is changed to generate metal filaments; and a diffusion control layer inserted between the ion supply layer and the switching layer, wherein the diffusion control layer serves to adjust electrical characteristics related to the generated metal filaments as the amount of the diffusing metal is adjusted in proportion to a thickness of the diffusion control layer.

Selector and memory device using the same

A display device includes a substrate comprising an active area and a non-active area a first data conductive layer disposed on the substrate and including signal wires connected to pixels, a first insulating layer disposed on the first data conductive layer, a second data conductive layer disposed on the first insulating layer and including a connection wire connected to some of the signal wires and dummy wiring patterns disconnected the signal wires, a second insulating layer disposed on the second data conductive layer and a pixel electrode disposed on the second insulating layer. The dummy wiring patterns are separated from one another at a disconnection, the second insulating layer includes a second portion disposed on the disconnection and a third portion disposed on at least a portion of the connection wire, and thicknesses thereof are different from each other.

Display device

Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction different from the first direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.

Semiconductor devices

A method of determining a highlight section of a sound source includes obtaining a sound source and classification information of the sound source, and learning a neural network by using the sound source and the classification information. The neural network includes an input layer including a node corresponding to a feature value of each of a plurality of sections obtained by splitting the sound source according to a time axis, an output layer including a node corresponding to the classification information, a hidden layer defined between the input layer and the output layer, a first function between the input layer and the hidden layer, and a second function between the hidden layer and the output layer, wherein the first function includes an attention model for calculating a weighted sum of the feature value of each section. The highlight section of the sound source is determined based on weight information of a feature value node of each section included in the first function.

Data collecting method and system

A thin film transistor array panel includes a substrate and a thin film transistor disposed on a surface of the substrate. The thin film transistor includes a semiconductor, a source electrode, and a drain electrode that are disposed on a same layer as one another. The semiconductor is between the source electrode and the drain electrode. The thin film transistor array panel further includes a buffer layer disposed between the semiconductor and the substrate and including an inorganic insulating material. The first edge of the buffer layer is substantially parallel to an adjacent edge of the semiconductor, a second edge of the buffer layer is substantially parallel to an adjacent edge of the source electrode, and a third edge of the buffer layer is substantially parallel to an adjacent edge of the drain electrode.

Thin film transistor array panel and manufacturing method thereof

A robot cleaner may include a main body; a traveling assembly moving the main body; a cleaning tool assembly installed in the lower part of the main body, and contacting a floor to clean the floor; a water-feeding unit supplying water to the cleaning tool assembly; and a capacitance measurer contacting the cleaning tool assembly, and measuring capacitance of the cleaning tool assembly in order to calculate an amount of water of the cleaning tool assembly. Accordingly, by measuring an amount of water of a cleaning tool installed in a robot cleaner based on capacitance, it is possible to accurately measure an amount of water absorbed in a cleaning tool.

Robot cleaner and control method thereof

A display device includes an active area including pixels arranged in a matrix shape, a non-active area disposed at one side of the active area in a first direction and including a pad unit, non-active fanout wirings disposed in the non-active area and connected to the pad unit, signal wirings extending in the first direction to traverse the active area and connected to the pixels, and connection wirings, each at least partially passing through the active area and connecting some of the non-active fanout wirings and some of the signal wirings. Each of the connection wirings include first and third extension portion extending in the first direction, and a second extension portion extending in a second direction, and at least two of the pixels are disposed between corresponding extension portions of two adjacent connection wirings along a direction in which the corresponding extension portions are spaced apart from each other.

Provided is a washing machine including: a cabinet including a plurality of side frames, a back frame, a top frame and a bottom frame; a front frame that is disposed in front of the cabinet and includes an internal laundry port through which laundry is put into a rotating tub, and a front cover that is disposed in front of the front frame, extends from the top frame to the bottom frame, includes an external laundry port corresponding to the internal laundry port and is integrally formed. Thus, no line is formed in a front side of the washing machine so that the exterior of the washing machine can be enhanced.

Washing machine

A sensor module and a robot cleaner including the sensor module may provide accurate sensing of an obstacle and prevent an erroneous sensing of an obstacle. The robot cleaner may include a body including a cleaning unit to remove foreign substances from a surface of a floor, a cover to cover an upper portion of the body, a sensor module including an obstacle sensor mounted to sense an obstacle, and a sensor window provided at one side of the sensor module. The sensor module may include a light emitting device to emit light through the sensor window, a light receiving reflector on which light reflected from the obstacle is incident, and a light shielding portion interposed between the light emitting device and the light receiving reflector to block the light emitted from the light emitting device from being incident upon the light receiving reflector.

Sensor module and robot cleaner having the same

Growing community of inventors

Seoul, South Korea

Dong Won Kim