Chengdu Vistar Optoelectronics Co., Ltd.

Other

Kunshan Go-visionox Opto-electronics Co., Ltd.

Kunshan New Flat Panel Display Technology Center Co., Ltd.

Dong Wei

Rubo Xing

Xiaolong Yang

Jiantai Wang

Huimin Liu

Huashan Chen

Bo Chen

Ping Sun

Xiaowei Li

Enqing Guo

Qi Shan

Xuna Li

A transfer device of micro-elements and manufacturing method thereof are provided in the present disclosure. The transfer device of micro-elements may comprise a vacuum chamber, a plurality of movable mass blocks and a plurality of electrode assemblies. The vacuum chamber may define a vacuum space and a plurality of through holes. The plurality of through holes can communicate the vacuum space with outside. The plurality of through holes can be configured to suck the micro-elements. The plurality of movable mass blocks may be arranged in the vacuum chamber. Each movable mass block may be arranged corresponding to a through hole. The plurality of electrode assemblies may be fixed in the vacuum chamber. Each electrode assembly can be arranged corresponding to a through hole.

Transfer device of micro-elements and manufacturing method thereof

The present application provides a method for transferring micro light emitting diodes and a transferring device. The device includes: a first substrate, having at least one surface arranged with a plurality of first adhesive region for a plurality of micro light emitting diodes to adhere thereon; and a transferring substrate, having at least one surface arranged with a plurality of second adhesive regions for at least a portion of the micro light emitting diodes to adhere on and being configured to transfer the at least a portion of the micro light emitting diodes to a driving back plate.

Method for transferring micro light-emitting diodes and transferring device

The present application provides a light emitting device, a method for making the same and a display apparatus. The light emitting device includes: a driving backplane; at least one set of driving electrodes disposed on the driving backplane, each set of driving electrodes including a first driving electrode and a second driving electrode; an epitaxial layer located on a side of the at least one set of driving electrodes away from the driving backplane; and at least one set of metal electrodes located on a side of the epitaxial layer close to the driving backplane, each set of metal electrodes including a first metal electrode and a second metal electrode, the first metal electrode and the second metal electrode being respectively connected to a first driving electrode and a second driving electrode, and a filling material being disposed between the first metal electrode and the second metal electrode.

Light emitting device, method for making the same and display apparatus

The present disclosure relates to a driving backplane, a micro-LED display panel and a micro-LED display device. The driving backplane, includes a plurality of pixel units arranged in an array, each of the pixel units comprising: an anode lead; a cathode lead at a side of the anode lead; and at least two pairs of electrodes, each pair of electrodes of the at least two pairs of electrodes including an anode and a cathode oppositely disposed, the anode being electrically connected to the anode lead, and the cathode being electrically connected to the cathode lead. In the course of using the foregoing driving backplane of the micro-LED display panel, it is only necessary to solder an LED chip on one pair of electrodes of the at least two pairs of electrodes.

Driving backplane, micro-LED display panel and display devices

The present application discloses a display panel. The display panel comprises a substrate and a plurality of pixel units disposed on the substrate, each of the plurality of pixel units comprises a plurality of sub-pixel units, each of the plurality of sub-pixel units comprises a light emitting layer, the plurality of sub-pixel units comprise at least one first type of sub-pixel unit, and the at least one first type of sub-pixel unit further comprises a first light processing layer, the first light processing layer comprises a light conversion layer and a light diffusion layer arranged as a laminated structure, and the first light processing layer is positioned at a side where a light emitting surface of the light emitting layer of the at least one first type of sub-pixel unit is located.

Display panel enhancing uniformity of display by arranging light processing layers

The present disclosure provides a light conversion substrate and a manufacturing method thereof, and a display panel. The light conversion substrate may include a substrate having a first surface and a second surface arranged opposite to each other. A plurality of first grooves may be defined on the first surface of the substrate. A plurality of second grooves may be defined on the second surface of the substrate. The plurality of first grooves and the plurality of second grooves are arranged alternately. A first light conversion body may be arranged in each of the plurality of first grooves. A second light conversion body ma be arranged in each of the plurality of second grooves. In the present disclosure, light conversion materials may not interfere with each other during the manufacturing method, so that the present disclosure may be suitable for a display panel with high pixel density.

Light conversion substrate and manufacturing method thereof, and display panel

A method for manufacturing an LED display device and an LED display device are provided. The method includes following operations. An LED array substrate and a conversion plate are provided. The LED array substrate includes a driving layer, a plurality of LED chips arranged in an array on a side of the LED array substrate having the driving layer. The conversion plate includes a substrate and a plurality of light conversion blocks, the plurality of light conversion blocks are spaced apart from each other and arranged on the substrate. A side of the conversion plate having the light conversion blocks is adhered with a side of the LED array substrate having the LED chips correspondingly, such that the light conversion blocks are arranged on corresponded top surfaces of the LED chips. The substrate is removed.

Method for manufacturing LED display device and LED display panel

A light emitting diode (LED) display device includes a plurality of pixel units. Each of the plurality of pixel units includes a red subpixel, a green subpixel, and a blue subpixel. The red subpixel is arranged with a first LED chip, the green subpixel is arranged with a second LED chip, and the blue subpixel is arranged with a third LED chip. The first LED chip is a blue LED chip or a green LED chip. The second LED chip is the green LED chip. The third LED chip is the blue LED chip. The red subpixel is further arranged with a red light conversion block arranged on the first LED chip.

LED display device, method for manufacturing the same, and LED display panel

The present disclosure provides a display panel including a substrate; and a plurality of pixel units arranged on the substrate; wherein each of the plurality of pixel units includes a plurality of sub-pixel units including at least one first type of sub-pixel unit; each of the plurality of sub-pixel units includes a light emitting layer; the at least one first type of sub-pixel unit includes a first light processing layer; the first light processing layer includes at least a light diffusion material and a light conversion material mixed with each other; and the first light processing layer is located on a side of a light emitting surface of the light emitting layer at the at least one first type of sub-pixel unit. By the above-mentioned manner, the uniformity of light conversion by the light emitting layer may be improved, thereby the display effect of the display panel may be improved.

Display panel

The present disclosure relates to the field of display technologies, and a stretchable display device, a method for manufacturing the same, and an electronic device are disclosed. In the present disclosure, the device includes: a stretchable substrate, a stretchable wire and a plurality of rigid islands. The stretchable wire and the plurality of rigid islands are all arranged on the stretchable substrate. The plurality of rigid islands are spaced apart on the stretchable substrate, and a pixel encapsulation body is formed on the rigid island. The stretchable wire is connected to the pixel encapsulation body to form a power supply circuit for the pixel encapsulation body. The present disclosure realizes a reliable electrical connection condition, effective encapsulation and structural stability of light-emitting pixels under stretching conditions by connecting the light-emitting pixel that is separately encapsulated on each rigid island, to one another through the stretchable wire.

Stretchable display devices

The present disclosure relates to a light emitting device, a method for preparing the same and a display device. The light emitting device includes a cathode layer, a quantum dot light emitting layer, a hole injection layer and an anode layer which are laminated. The hole injection layer includes a complex metal oxide film comprising two metal oxides that is at least partially oxidated.

Light emitting devices, methods for preparing the same, and display devices

The disclosure relates to a quantum dot light-emitting diode device and a manufacturing method and an apparatus thereof, which are used to alleviate the problem of interface quenching caused by the large density of the defect state of nanoparticles of the electron transport layer in the prior art. The method includes: dissolving a polyelectrolyte and nanoparticles having inorganic semiconductor properties to form a first mixed solution; depositing the first mixed solution on one surface of the formed quantum dot light-emitting layer to form an electron transport layer containing the polyelectrolyte and the nanoparticles. The end groups carried by at least a portion of the polyelectrolyte are capable of filling surface defects of the nanoparticles in the electron transport layer.

Quantum dot light-emitting diode devices and manufacturing methods, apparatuses thereof

The present application relates to a light emitting diode chip including: a first semiconductor layer and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer are laminated to each other, and have an exposed upper surface respectively. An electrode is provided on the upper surfaces of the first semiconductor layer and the second semiconductor layer respectively. The electrode has a first recess in a direction perpendicular to the upper surface.

Display devices, light emitting diode chips and methods for manufacturing the same

An LED chip provided by an embodiment includes a first semiconductor layer; an active layer and a second semiconductor layer located sequentially on the first semiconductor layer. A first contact electrode extends through the active layer and the second semiconductor layer and is electrically connected to the first semiconductor layer; a second contact electrode is located on the second semiconductor layer and is electrically connected to the second semiconductor layer; a first extension electrode is located on the first contact electrode and is electrically connected to the first contact electrode, the first extension electrode comprises a plurality of concave spots for soldering; and a second extension electrode is located on the second contact electrode, electrically connected to the second contact electrode and isolated from the first extension electrode, and the second extension electrode includes a plurality of concave spots for soldering.

LED chips, method of manufacturing the same, and display panels

A method for manufacturing a micro-LED display screen includes: forming an N-type GaN layer, a quantum-well light-emitting layer, and a P-type GaN layer on a sapphire substrate sequentially; etching the P-type GaN layer, the quantum-well light-emitting layer, and the N-type GaN layer from top to bottom, to form a first trench; forming an ITO layer on the surface of the P-type GaN layer, and etching the ITO layer to form a second trench; generating an N-type contact electrode in the first trench; generating a reflective electrode having a longitudinal cross-section in a shape with a wide upper side and a narrow lower side, respectively, on an upper surface of the N-type contact electrode and in the second trench; depositing an insulating layer on a surface of the micro-LED chip, and etching the insulating layer to expose the reflective electrodes; and soldering a driving circuit substrate to the reflective electrode.

Growing community of inventors

Kunshan, China

Dong Wei