Micron Technology Incorporated

Globalfoundries Singapore Pte. Ltd.

National University of Singapore

Dong Wang

Shuangqiang Luo

Xiao Li

Pei Qiong Cheung

Da Xing

Xiao Zeng

Juan Boon Tan

Danny Pak-Chum Shum

Fan Zhang

Huajun Liu

Laiqiang Luo

Yew Tuck Clament Chow

Li Yi

Irene Lee

Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.

Integrated assemblies and methods of forming integrated assemblies

Integrated circuits and methods of producing the same are provide. In an exemplary embodiment, a method includes determining a memory area of the integrated circuit, and forming a select layer overlying the substrate. A portion of the select layer is selectively etched to form a select gate within the memory area. A concentration of an indicator is measured in an etch off-gas during the selective etching of the select layer, and the selective etching of the select layer is terminated when the concentration of the indicator crosses an end point determination concentration.

Integrated circuits with non-volatile memory and methods of producing the same

An alloy having a formula Zr(CuNi)xAlwherein X, U and a are in atomic percentages wherein X is less than or equal to 48 and greater than or equal to 37, wherein U is less than or equal to 14 and greater than or equal to 3, and wherein a is less than or equal to ten and greater than or equal to 3. Methods of forming the alloy and bulk metallic glass comprising the alloy are also provided. The alloy and bulk metallic glass are useful in a wide number of applications which includes sports and luxury products, electronic goods, medical instruments, and military equipment.

Alloys, bulk metallic glass, and methods of forming the same

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Singapore, Singapore

Dong Wang