Samsung Electronics Co., Ltd.

Other

Kt Corporation

Korea University Research and Business Foundation

Korea Institute of Science and Technology

Dongjin Semichem Co., Ltd.

Dong-Wan Kim

Jung-Hoon Han

Dong-sik Park

Dong-gun Lee

Ju-Ik Lee

Jong-Han Park

Kug Sun Hong

Min-Gu Lee

Yoosang Hwang

Bong-Soo Kim

Dongho Kim

Hee-seob Ryu

Seong-sue Kim

Eunjung Kim

Junghoon Han

Young-jun Ryu

Sohyun Park

Byeong-seob Ko

Sang-Oh Park

Jae-hyun Bae

Sung-min Huh

Tae-Geun Kim

Ki-hoon Shin

Ki-beom Kim

Nam-gook Cho

Jaewon Seo

Seokho Shin

Soon-Hyang Park

Won-Young Jeong

Do-Kyun Kwon

Sang-Gu Kang

Dong-Ho Lee

Jin-Young Kim

Keunnam Kim

Su-Jin Kim

Chang-min Park

Seong-woon Choi

Hyeon-Woo Jang

In-Sung Kim

Jung-kun Lee

Chan-Uk Jeon

Juik Lee

Hee-bom Kim

Jihoon Chang

Sang-hyun Kim

Jae-Gwan Park

Jong-Dai Park

Jong-Sung Park

Hyunseok Yoon

Young Dae Ko

Ra-Woon Choi

Joonsuk Park

Seung-Deok Seo

Bobae Ju

HyunWoo Shim

Hyun-Seung Ryu

Jeong-Ryeol Kim

Hyun-Woo Jung

Hee Jo Song

Keonhee Park

Kyoung Jin Choi

Hyun-Seok Jung

Jae-Yun Lee

Hee-Bum Hong

Soung-Jun Yoon

Jung-Kun Lee

Disclosed are semiconductor devices and their fabrication methods. The semiconductor device comprises a substrate including a peripheral block and cell blocks each including a cell center region, a cell edge region, and a cell middle region, and bit lines extending on each cell block in a first direction. The bit lines include center bit lines, middle bit lines, and edge bit lines. The bit line has first and second lateral surfaces opposite to each other in a second direction. The first lateral surface straightly extends along the first direction on the cell center region, the cell middle region, and the cell edge region. The second lateral surface straightly extends along the first direction on the cell center region and the cell edge region, and the second lateral surface extends along a third direction, that intersects the first direction and the second direction, on the cell middle region.

Semiconductor device and method of fabricating the same

A semiconductor device includes a semiconductor substrate and a connection terminal, including a base pillar, on the semiconductor substrate. An insulation layer is formed on the semiconductor substrate, the insulation layer including an opening in the insulation layer through which the base pillar extends, wherein a side wall of the insulation layer defining the opening includes a horizontal step at a level that is lower than an uppermost portion of the base pillar.

Semiconductor device including base pillar, connection pad, and insulation layer disposed on a substrate

A semiconductor device includes a semiconductor substrate including a chip region and an edge region around the chip region, a lower insulating layer on the semiconductor substrate, a chip pad on the lower insulating layer on the chip region, an upper insulating layer provided on the lower insulating layer to cover the chip pad, the upper and different insulating layers including different materials, and a redistribution chip pad on the chip region and connected to the chip pad. The upper insulating layer includes a first portion on the chip region having a first thickness, a second portion on the edge region having a second thickness, and a third portion on the edge region, the third portion extending from the second portion, spaced from the first portion, and having a decreasing thickness away from the second portion. The second thickness is smaller than the first thickness.

Semiconductor device

The semiconductor device includes a substrate including an integrated circuit and a contact that are electrically connected to each other, an insulation layer covering the substrate and including metal lines, and a through electrode electrically connected to the integrated circuit. The insulation layer includes an interlayer dielectric layer on the substrate and an intermetal dielectric layer on the interlayer dielectric layer. The metal lines include a first metal line in the interlayer dielectric layer and electrically connected to the contact, and a plurality of second metal lines in the intermetal dielectric layer and electrically connected to the first metal line and the through electrode. The through electrode includes a top surface higher than a top surface of the contact.

Semiconductor devices having through electrodes and methods for fabricating the same

Provide are a method of manufacturing a cathode material including (A) synthesizing a precursor including a metal compound and a carbon compound, (B) carbonizing the precursor in an inert atmosphere to produce a metal-carbon composite, (C) sulfurizing the metal-carbon composite in a sulfur atmosphere to produce a metal-metal sulfide-carbon composite, (D) removing metal particles from the metal-metal sulfide-carbon composite to produce a metal sulfide-carbon composite, and (E) synthesizing sulfur particles in the metal sulfide-carbon composite to produce a metal sulfide-sulfur-carbon composite, and a cathode active material.

Method of preparing cathode active material and cathode active material

Disclosed is a portable device for controlling an external device. The portable device comprises: a first microphone, disposed on one surface of a portable device, for receiving an audio signal including user voice uttered by a user; a second microphone, disposed on the other surface of the portable device opposite to the one surface of the portable device, for receiving the audio signal including the user voice; a signal processing unit for processing the audio signal; a communication unit for communicating with an external device; and a processor which determines the user utterance distance between the portable device and the user on the basis of the audio signal received through the first and second microphones, if it is determined that the user utterance distance is a short distance utterance, controls the signal processing unit to process only the audio signal received through the microphone disposed at a relatively further distance from the user from among the first and second microphones, and controls the communication unit to transmit the processed audio signal to the external device.

Portable device for controlling external device, and audio signal processing method therefor

Disclosed is a catalyst for oxygen reduction and evolution reactions. The catalyst is in the form of nickel sulfide (NiS) nanosheets. NiSmolecules are cross-linked and oriented two-dimensionally in the NiSnanosheets. Also disclosed is a method for producing the catalyst.

Catalyst for oxygen reduction reaction and oxygen evolution reaction and method for manufacturing of the same

Semiconductor chip and semiconductor package including the same

A semiconductor memory device includes a word line buried in an upper portion of a substrate and extending in a first direction, and a word line contact plug connected to the word line. An end portion of the word line includes a contact surface exposed in the first direction, and the word line contact plug is connected to the contact surface.

Semiconductor memory device

Disclosed are a display apparatus and a method of controlling the display apparatus. The display apparatus includes: a signal receiver configured to receive a broadcasting signal; a display configured to display an image based on the received broadcasting signal; a sound receiver configured to receive a sound spoken by a user; a first sound recognizer configured to be supplied with power when the display apparatus is in a standby mode, and determine whether the received sound is a reserved word candidate having a high probability of corresponding to a reserved word; a second sound recognizer configured to be supplied with power when the received sound is determined as the reserved word candidate and to determine whether the received sound is the reserved word; and a controller configured to control the preset operation to be performed when the received sound is determined as the reserved word.

Electronic apparatus and control method thereof

A circuit board comprises a mother substrate including first and second scribing regions, the first scribing region extending in first direction, the second scribing region extending in second direction, the first and second directions crossing each other, the mother substrate including chip regions defined by the first and second scribing regions, and a through via penetrating the chip regions of the mother substrate. The mother substrate comprises a first alignment pattern protruding from a top surface of the mother substrate. The first alignment pattern is disposed on at least one of the scribing regions.

Circuit boards and semiconductor packages including protruding pattern on substrate

A method of forming a semiconductor device includes forming a molding layer and a supporter layer on a substrate including an etch stop layer, forming a mask layer on the supporter layer, forming a first edge blocking layer on the mask layer, forming a mask pattern by etching the mask layer, forming a hole, forming a lower electrode in the hole, forming a supporter mask layer on the supporter layer, forming a second edge blocking layer on the supporter mask layer, forming a supporter mask pattern by patterning the supporter mask layer, forming a supporter opening passing through the supporter layer, removing the molding layer, forming a capacitor dielectric layer and an upper electrode on the lower electrode, forming an interlayer insulating layer on the upper electrode, and planarizing the interlayer insulating layer. The hole passes through the supporter layer, the molding layer and the etch stop layer.

Method of forming semiconductor device including edge chip and related device

Growing community of inventors

Hwaseong-si, South Korea

Dong-Wan Kim