Hynix Semiconductor Inc.

Dong-Sun Sheen

Seok-Pyo Song

Sang-Tae Ahn

Heung-Jae Cho

Tae-Yoon Kim

Kwan-Yong Lim

Se-Aug Jang

Min-Gyu Sung

Yong-Soo Kim

Hong-Seon Yang

Jong-Han Shin

A method for fabricating a transistor including a bulb-type recess channel includes forming a bulb-type recess pattern in a substrate, forming a gate insulating layer over the substrate and the bulb-type recess pattern, forming a first gate conductive layer over the gate insulating layer, forming a void movement blocking layer over the first gate conductive layer in the bulb-type recess pattern, and forming a second gate conductive layer over the void movement blocking layer and the first gate conductive layer.

Transistor including bulb-type recess channel and method for fabricating the same

Disclosed is a semiconductor device with a flowable insulation layer formed on a capacitor and a method for fabricating the same. Particularly, the semiconductor device includes: a capacitor formed on a predetermined portion of a substrate; an insulation layer formed by stacking a flowable insulation layer and an undoped silicate glass layer on a resulting substrate structure including the substrate and the capacitor; and a metal interconnection line formed on the insulation layer. The method includes the steps of: forming a capacitor on a predetermined portion of a substrate; forming an insulation layer by stacking a flowable insulation layer and an undoped silicate glass layer on a resulting substrate structure including the substrate and the capacitor; and forming a metal interconnection line on the insulation layer.

Semiconductor device with flowable insulation layer formed on capacitor and method for fabricating the same

The present invention relates to a method for isolating semiconductor devices. The method includes the steps of: forming a patterned pad nitride layer pattern to open at least one isolation region on the substrate; forming a first trench and a second trench by etching the exposed substrate; depositing a first oxide layer to fill the first trench by performing an atomic layer deposition (ALD) method; etching a portion of the first oxide layer which is filled into the wide trench; and depositing a second oxide layer by performing a deposition method.

Method for isolating semiconductor devices with use of shallow trench isolation method

A method for forming a flowable dielectric layer using a barrier layer on sidewalls of patterned flowable dielectrics, thereby preventing a bridge phenomenon between adjacent contact plugs. The method includes steps of: forming patterns on a semiconductor substrate, wherein narrow and deep gaps are formed therebetween; forming a flowable dielectric layer so as to fill the gaps between the patterns; carrying out an annealing process for densifying the flowable dielectric layer and removing moisture therein; forming contact holes by selectively etching the flowable dielectric layer so as to expose predetermined portions of the semiconductor substrate; forming a barrier layer on sidewalls of the contact holes for preventing micro-pores in the flowable dielectric layer; carrying out a cleaning process in order to remove native oxides and defects on the semiconductor substrate; and forming contact plugs by filling a conductive material into the contact plugs.

Method for forming flowable dielectric layer in semiconductor device

Growing community of inventors

Ichon-shi, South Korea

Dong-Sun Sheen