Hynix Semiconductor Inc.

Dong-Su Park

Eun Ah Lee

Hye Jin Seo

Su Ho Kim

Cheol-Hwan Park

Disclosed herein is a metal interconnection structure of a semiconductor device, comprising lower metal interconnection layers disposed on a semiconductor substrate, a buffer layer made of a metal oxide disposed thereon, an intermetallic dielectric layer made of a low-k material disposed on the buffer layer of the metal oxide, and an upper metal interconnection layer disposed on the intermetallic dielectric layer and electrically connected through the intermetallic dielectric layer and buffer layer to the lower metal interconnection layers.

Metal interconnection of a semiconductor device and method of fabricating the same

A method for forming a capacitor in a semiconductor device is disclosed. The method includes forming a storage node electrode on a semiconductor substrate, forming a dielectric layer having a high dielectric constant on the storage node electrode, depositing a plate electrode on the dielectric layer, thereby forming by-product impurities, and removing by-product impurities remaining on the plate electrode by introducing a hydrogen (H) atom-containing gas onto the semiconductor substrate while depositing a capping layer on the plate electrode.

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Icheon-shi, South Korea

Dong-Su Park