Korea Institute of Science and Technology

Dong Su Lee

Tae-Wook Kim

Sukang Bae

Sang Hyun Lee

Sung Ho Lee

Han Ik Jo

Seoung-Ki Lee

Byung Joon Moon

Min Cheol Park

Myung Jong Kim

Sang Jin Kim

Su Young Son

Dae-Young Jeon

Gil Seong Kang

Cheol-Ho Lee

Sunbin Hwang

Younki Lee

Ye Lin Oh

Ho-Koang Choi

JungHo Kang

Dongheon Shin

An electromagnetic wave shielding film includes a substrate; and an electromagnetic wave shielding layer disposed on the substrate and including a laminated structure having a planar shape and including a stack of metal nanoplates, wherein each metal nanoplate of the stack of metal nanoplates is staggered with respect to one or more other metal nanoplate of the stack of metal nanoplates so that the laminated structure has pores defined therein and between laminated structures in a stack of laminates structures. An additional embodiment of an electromagnetic wave shielding film includes an electromagnetic wave shielding layer including a composite of a polymer resin matrix composed of a polymer and at least one metal nanoplate, wherein each metal nanoplate of the at least one metal nanoplate is staggered with respect to one or more other metal nanoplate of the at least one metal nanoplate so that the composite has pores defined therein.

Electromagnetic interference shielding film having a laminated structure including a stack of metal nanoplates and a nano electrode including the same

A fiber-type electronic device comprising a pattern for electronic devices stacked on a fiber filament substrate is provided. It is possible to manufacture an electronic device directly on a fiber filament substrate by applying the pattern for electronic devices. Thus, it can be widely used for wearable devices and the like. The pattern for electronic devices is manufactured by a method for forming a pattern for electronic devices comprising an exposure process using a maskless exposure apparatus. Thus, it is possible to manufacture a pattern for electronic devices on a fiber filament substrate through a continuous process and thus to increase the process efficiency.

Method for manufacturing pattern for electronic devices, and fiber-type electronic device comprising the pattern for electronic devices

The present invention relates to a carbon nanofibers growth method including (S) depositing an alumina layer on a silicon substrate, (S) depositing palladium on the alumina layer to form a palladium catalyst layer, and (S) growing carbon nanofibers on the palladium catalyst layer by a chemical vapor deposition (CVD) method, and carbon nanofibers vertically grown on an alumina layer-deposited silicon substrate, the carbon nanofibers having tip ends with a radius of curvature less than or equal to 5 nm, a diameter less than or equal to 50 nm, a length more than or equal to 1 mm, and a length-diameter aspect ratio more than or equal to 50,000.

Carbon nanofibers with sharp tip ends and a carbon nanofibers growth method using a palladium catalyst

Provided is a carbon nanostructure including a plurality of organic molecules that are decomposition products of an organic solvent. The carbon nanostructure includes a carbon nanostructure core and a plurality of organic molecules bound to and grown on the carbon nanostructure core, wherein the carbon nanostructure core is a combination of the organic molecules.

Carbon nanostructure and method for preparing the same

Provided are a composite electric wire structure wherein a carbon material island structure is formed on a surface of a metal wire and a method for manufacturing the same. The carbon material/metal composite electric wire is capable of solving stability problem and preventing a decrease in electrical properties, mechanical properties, etc. In addition, the composite electric wire structure may be produced in commercially viable large scale.

Composite electric wire structure and method for manufacturing the same

Provided are nitrogen-doped carbon quantum dots as pyrolysis product of fumaronitrile. The carbon quantum dots may be formed in such a manner that nitrogen may be doped in an amount of 3-10 wt % based on the total weight of the carbon quantum dots with no need for a separate doping process. As a result, the carbon quantum dots have excellent properties, such as optical property, electroconductivity and thermal safety, and thus may be useful for photocatalysts or organic solar cells, or the like.

N-doped nanocarbon materials and method for manufacturing the same

Growing community of inventors

Wanju-gun, South Korea

Dong Su Lee