Tong Yang Cement Corporation

Soongsil University

Unid Co., Ltd.

Inostek Inc.

Oci Corporation

Dong Yang Cement Corporation

Dong Su Lee

Eui Joon Yoon

Hyun Jung Woo

Dong Yeon Park

Dong Il Chun

Min Hong Kim

Jo Woong Ha

Seung Hyun Kim

Chong Kwang Yoon

Min Hae Kwon

Jowoong Ha

Hyeong Seok Lee

Tae Soon Park

Kwang Hoon Sohn

Chan In Eom

A traffic control method and apparatus with an autonomous vehicle based on adaptive reward. A traffic control apparatus for an autonomous vehicle based on adaptive reward comprises an information observation unit that collects observation information from a sensing module of an autonomous vehicle or a roadside unit (RSU); a policy execution unit that decides on an action including adjusting acceleration and changing lanes of the autonomous vehicle based on the observation information and policy; and a reward determination unit that determines reward according to observation information at a next timestep according to the decision made, wherein reward in the reward determination unit includes penalty in an event of an accident and reward when driving, wherein the reward when driving includes an adaptive target speed reward term, a successful lane change reward term, and a safety distance compliance reward term that are adaptively determined according to road traffic.

Traffic control method and apparatus with autonomous vehicle based on adaptive reward

The present invention discloses a matable and dematable electrical connecting structure characterized by comprising: a female coupling member having a first connecting portion; a male coupling member having a second connecting portion; and a connecting unit coupling the female coupling member and the male coupling member and electrically connecting the first and second connecting portions, wherein the connecting unit includes an inner conductive material which is electrically connected to the first connecting portion and is provided on the inner wall of an insert hole formed in the female connecting member, a column including a conductive material which is electrically connected to the second connecting portion, protruding from the male connecting member, and can be inserted in the insert hole, and one or more elastic pin including a surface of a conductive material which is extending in an outward direction from the column and elastically contacting the inner conductive material.

Connecting unit having a column with a plurality of planar elastic fins extending from the column

A method of manufacturing a metallic film consisting of giant single crystal grains is disclosed. The method includes depositing the metallic film on a substrate under an atmosphere of an inert gas and a specified additive gas to change a surface energy, grain boundary energy, or internal strain energy of the metallic film. The method also includes annealing step of the resultant of the deposition at a temperature suitable for the grain growth of the metallic film containing the additive gases. According to the method, the metallic film consisting of giant single crystal grains having a grain size whose ratio of thickness to an average grain size of the film is above 50 can be produced without depending upon the kind of substrate and deposition method.

Method of manufacturing metallic film consisting of giant single crystal grains

A platinum film orientation-controlled to (111), (200) and/or (220) is provided by depositing the platinum film under an atmosphere containing an oxygen component such as O , O , N O , N &plus;O , or mixtures thereof as well as an inert gas (Ar, Ne, Kr, or Xe) on a substrate heated to a temperature ranged from room temperature to 700&deg; C., and annealing to remove the gases introduced into the platinum film during the deposition thereof. The platinum film formed in this process has excellent electrical conductivity (resistivity is lower than 15 &mgr;&OHgr;-cm), good enough adhesion strength to be used for electronic devices, and does not show hillocks, voids or pinholes.

Apparatus and method of forming preferred orientation-controlled platinum film using oxygen

A method of depositing a (200)-oriented platinum thin film on a substrate, including the steps of forming a oxygen containing platinum layer on the surface of a silicon wafer heated to a temperature range over room temperature and not exceeding 700&deg; C. under a mixed gaseous atmosphere of oxygen and inert gas and annealing the substrate at a temperature between 400&deg; C. and 1000&deg; C. The platinum thin film formed according to the present invention in (200)-oriented and does not have any conventional defects such as hillocks or voids.

Method of forming a (200)-oriented platinum layer

A platinum film, which is used as a bottom electrode for a capacitor in a DRAM cell or a non-volatile ferroelectric memory cell, is formed in two separate processes, wherein a first thickness platinum part thereof is deposited under an inert gas atmosphere, and the second thickness platinum part is deposited under an atmosphere containing oxygen, nitrogen and/or a mixture thereof as well as an inert gas. The platinum film is annealed under a vacuum atmosphere to remove the oxygen an/or nitrogen introduced during the deposition of the second thickness platinum part. The annealed platinum film prevents formation of an oxide on a functional intermediate film such as a diffusion barrier layer or an adhesion layer, which is provided below the bottom electrode of platinum film.

Apparatus and methods of depositing a platinum film with anti-oxidizing

Platinum film orientation-controlled to (111), (200) and/or (220) are provided by depositing the platinum film under an atmosphere containing nitrogen as well as an inert gas (Ar, Ne, Kr, Xe) on a substrate heated to temperature ranged from room temperature to 500.degree. C., and then annealing to substantially remove nitrogen introduced into the platinum film during the deposition thereof. The platinum film formed in this process has an excellent electrical conductivity (resistivity is lower than 15 .mu..OMEGA.-cm), good enough adhesion strength to be used for electronic devices, and does not show hillocks, pores or pinholes.

Apparatus and methods of forming preferred orientation-controlled

The present invention relates to a method of depositing a platinum thin-film on a silicon wafer. The method includes the steps of depositing a platinum layer on an insulating oxide layer under an oxidation atmosphere to form a mixture film consisted of platinum grains, platinum oxide grains and oxygen adhered to those grains (hereinafter, 'the mixture film' to be referred as 'oxygen containing platinum thin-film'); depositing an additional platinum thin-film to a desired thickness on the oxygen containing platinum thin-film under a complete inert atmosphere; and annealing the silicon substrate at a temperature of 400 to 1,300.degree. C. in order to remove oxygen present in the independent form or in platinum oxide form within the oxygen containing platinum thin-film and to stabilize the entire platinum thin-film. The oxygen containing platinum thin-film layer serves as a glue layer during the depositing step of additional platinum thin-film layer and is converted into pure platinum condition after the annealing step, whereby the silicon substrate substantially does not have any glue layer between the platinum layer and the insulating layer of the silicon substrate.

Method for depositing a platinum layer on a silicon wafer

The present invention relates to a method of depositing a platinum thin-film on a silicon wafer. The method includes the steps of depositing a platinum layer on an insulating oxide layer under an oxidation atmosphere to form a mixture film consisted of platinum grains, platinum oxide grains and oxygen adhered to those grains (hereinafter, 'the mixture film' to be referred as 'oxygen containing platinum thin-film'); depositing an additional platinum thin-film to a desired thickness on the oxygen containing platinum thin-film under a complete inert atmosphere; and annealing the silicon substrate at a temperature of 400.degree. to 1,300.degree. C. in order to remove oxygen present in the independent form or in platinum oxide form within the oxygen containing platinum thin-film and to stablize the entire platinum thin-film. The oxygen containing platinum thin-film layer serves as a glue layer during the depositing step of additional platinum thin-film layer and is converted into pure platinum condition after the annealing step, whereby the silicon substrate substantially does not have any glue layer between the platinum layer and the insulating layer of the silicon substrate.

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Seoul, South Korea

Dong Su Lee