Samsung Electronics Co., Ltd.

Dong Su Ko

Sungjin Kim

Dongjin Lee

Satoru Yamada

Ji Eun Lee

Han Jin Lim

Moonyoung Jeong

Sung Heo

Jiho Yoo

Eunae Cho

Kyoung-Ho Jung

Gyeongsu Park

Yongsu Kim

Hyun Uk Park

Chan Kwak

Hyun Soo Park

Hyun Wook Park

Kwanghee Kim

Junghwa Kim

Mi Jeong Kim

Jiye Kim

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Semiconductor device and method of manufacturing the same

An electrical conductor includes a substrate; and a conductive layer disposed on the substrate and including a plurality of silver nanowires, wherein the silver nanowires exhibit a main peak assigned to a (111) crystal plane in an X-ray diffraction spectrum thereof, and a 2&#x3b8; full width at half maximum (FWHM) of the main peak after Gaussian fitting is less than about 0.40 degrees.

Silver nanowires, production methods thereof, conductors and electronic devices including the same

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Seoul, South Korea

Dong Su Ko