Korea Electronics Technology Institute

Samsung Electronics Co., Ltd.

Republic of Korea (national Disaster Management Research Institute)

Hydrosem

Daegu Gyeongbuk Institute of Science and Technology

Dong Su Kim

Jun Chul Kim

Jong Min Yook

Ji Hun Kim

Jae Seung Joo

Youn Gon Oh

Ho Chan Lee

Sae Yun Ko

Gil Ho Gu

Eun Hee Lee

Seong Pyo Hong

Hyeon Seok Choi

Tae Sung Cheong

Ho Jun You

Byung Man Yoon

Seo Jun Kim

Seong Sil Jeong

Je In Yu

Chul Kyu Kim

Yun Kwon Park

Duck Hwan Kim

Jea Shik Shin

In Sang Song

Se Hoon Park

Ji Woong Choi

Hong Soo Choi

Jae Eun Jang

Kwon Sik Shin

Sang Hyuk Park

Do Young Lee

Jeong Kwang Lee

Young Hwan Choo

Jun Suk Bang

Kyung Soo Kim

Sung Ho Lim

Min Kyung Sim

Che Ll Moon

A waveguide package and a method for manufacturing the same are disclosed. The waveguide package includes a package structure including a waveguide opened toward one side surface of a substrate, a semiconductor chip mounted on one surface of the package structure and configured to output an electrical signal to the waveguide. Since an interior of the waveguide is filled with air, electrical loss of the waveguide is minimized. The cavity is formed by processing the substrate made of photosensitive glass. Accordingly, the waveguide may be accurately formed. An electronic circuit may also be formed at the waveguide package. Accordingly, it may be possible to provide a waveguide package enhanced in degree of integration.

Waveguide package, method of manufacturing the same, and package housing

Provided is a tray including a plate including a first region and a second region, a first groove on the first region of the plate and to which a stub is fixed, and a second groove on the second region of the plate and to which a grid holder is fixed, wherein the stub is configured to store test wafer pieces, and wherein the grid holder is configured to store a test sample.

Tray and destructive analysis automation apparatus including the same

Provided is an equipment front end module (EFEM) including a base configured to communicate with a processor, a tray port on the base, the tray port being configured to load a tray including a stub and a grid holder, a working robot configured to move in a direction on the base, and grasp and convey the stub in the tray and the grid holder in the tray, and a shuttle port on the base, the shuttle port including a first groove configured to fix the stub, and a second groove configured to fix the grid holder, wherein the working robot is further configured to convey the stub to the first groove and convey the grid holder to the second groove.

Equipment front end module and destructive analysis automation apparatus including the same

A power noise filter and a supply modulator including the same, and a wireless communication device including the power noise filter are provided. The power noise filter includes a band stop filter and a low pass filter. The band stop filter includes an inductor and a first capacitor, which are connected in parallel between first and second nodes. The first node receives a first voltage, which is filtered by the band pass filter to thereby generate a second voltage at the second node. The first low pass filter includes the inductor and a second capacitor, which has one end connected to the second node and an opposite end connected to a ground source.

Power noise filter and supply modulator including the same

A semiconductor device is provided. The semiconductor device comprises an output terminal from which an output voltage is output, a switching converter configured to control the output voltage on the basis of a first reference voltage, a load capacitor configured to be charged with a voltage corresponding to the output voltage, a linear amplifier connected to one end of an alternating current (AC) coupling capacitor and configured to control a voltage of the AC coupling capacitor on the basis of a second reference voltage, and a switching circuit configured to control a charging speed of the load capacitor and control a connection between the output terminal and one end and another end of the AC coupling capacitor.

Semiconductor device

The present invention provides a method for manufacturing a high frequency capacitor, including preparing a substrate for formation of the capacitor, forming a dielectric layer at an upper surface of the substrate, forming an upper electrode at an upper surface of the dielectric layer, and removing a portion of a lower surface of the substrate, to expose a lower surface of the dielectric layer, and forming a lower electrode at the lower surface of the dielectric layer. The high frequency capacitor includes a dielectric layer having a uniform surface, a thick upper electrode, and a thick lower electrode and, as such, exhibits high quality factor (Q) even at a high frequency.

High frequency capacitor and manufacturing method thereof

A substrate analysis apparatus is provided. The substrate analysis includes: an interlayer conveying module configured to transport a first FOUP; an exchange module which is connected to the interlayer conveying module, and configured to transfer a wafer from the first FOUP to a second FOUP; a pre-processing module configured to form a test wafer piece using the wafer inside the second FOUP; an analysis module configured to analyze the test wafer piece; and a transfer rail configured to transport the second FOUP containing the wafer and a tray containing the test wafer piece. The wafer includes a first identifier indicating information corresponding to the wafer, the test wafer piece includes a second identifier indicating information generated by the pre-processing module which corresponds to the test wafer piece, and the analysis module is configured to analyze the first identifier and the second identifier in connection with each other.

Substrate analysis apparatus and substrate analysis method

A quasi-coaxial transmission line, a semiconductor package including the same and a method of manufacturing the same are disclosed. The quasi-coaxial transmission line includes a core, which is formed through an upper surface and a lower surface of a base substrate so as to transmit an electrical signal, and a shield, which is spaced apart from the core and which coaxially surrounds a side surface of the core, at least a portion of the shield being removed so as to form an open portion. The quasi-coaxial transmission line is capable of preventing distortion of an electrical signal at a portion thereof that is connected to an external circuit board and to reduce an area of a semiconductor package including the quasi-coaxial transmission line.

Quasi-coaxial transmission line, semiconductor package including the same, and method of manufacturing the same

Disclosed is a device and a method for measuring stream water depth in real-time through positioning data filtering to ensure the reliability of the measured water depth data even when the stream water depth measurement data is filtered and applied to a small stream having a small basin area and a steep slope. The device for measuring stream water depth in real-time through positioning data filtering includes: a measuring part for measuring the water depth of a stream to be measured; a positioning data filtering part for filtering the water depth data measured by the measuring means by a local linear regression-based bivariate scatterplot smoothing technique through elastic bandwidth application; and a water depth calculating part for calculating a water depth of the stream to be measured by using the positioning data filtered by the positioning data filtering part, and minimizing the uncertainty of the water depth measurement.

Device and method for measuring stream water depth in real-time through positioning data filtering

A semiconductor package includes a semiconductor chip including an electrode pad formed on the top surface thereof, a passive device embedded in the semiconductor package, the passive device having no functional electrode on the top surface thereof, a cover layer covering the semiconductor chip and the passive device, and at least one electrode pattern formed on the cover layer to transmit electrical signals. The cover layer includes at least one first opening formed to expose a region in which the functional electrode is to be formed. The electrode pattern includes a functional electrode portion formed in a region in which the functional electrode of the passive device is to be formed through the first opening. In the process of forming the electrode pattern, a functional electrode of the passive device is formed together therewith, thereby eliminating a separate step of manufacturing a functional electrode and thus reducing manufacturing costs.

Semiconductor package including passive device embedded therein and method of manufacturing the same

Disclosed is a system for automatically measuring a discharge in real time based on a CCTV image. The system includes: a water depth measurement device filtering water depth data measured by a measurement means with a local linear regression-based bivariate scatterplot smoothing technique through flexible bandwidth application to calculate the water depth of a stream; an image acquisition device acquiring a continuous image of a flow speed measurement side of the stream; an image analysis PC using an image of the image acquisition device to measure the surface flow speed in real time and receiving a measured water depth from the water depth measurement device to measure the discharge in real time with cross-section data; and a discharge calculation and management server for transmitting and displaying a real-time discharge measurement result based on a web.

System for automatically measuring discharge in real-time based on cctv image and method thereof

Disclosed is a river flow velocity measurement device using optical flow image processing, including: an image photographing unit configured to acquire consecutive images of a flow velocity measurement site of a river; an image conversion analysis unit configured to dynamically extract frames of the consecutive images in order to normalize image data of the image photographing unit, image-convert the extracted frames, and perform homography calculation; an analysis region extracting unit configured to extract an analysis region of an analysis point; a pixel flow velocity calculating unit configured to calculate a pixel flow velocity using an image in the analysis region of the analysis point extracted by the analysis region extracting unit; and an actual flow velocity calculating unit configured to convert the pixel flow velocity calculated by the pixel flow velocity calculating unit into an actual flow velocity.

Apparatus and method for measuring flow velocity of stream using optical flow image processing

An embodiment of the present invention provides a capacitor having a through hole structure and a manufacturing method therefor. The capacitor having the through hole structure includes: a baseboard having a through hole penetrating from an upper surface of the baseboard to a lower surface thereof; a first conductive layer formed on an internal surface of the through hole, and the upper surface of the baseboard, the lower surface thereof, or both the upper and lower surfaces thereof; a first dielectric layer formed on the first conductive layer; and a second conductive layer formed on the first dielectric layer.

Capacitor having through hole structure and manufacturing method therefor

Provided is a tactile sensation recognition device according to an embodiment of the disclosure including: a receiver configured to receive tactile sensation information obtained by sensing a surface of an object through a tactile sensor; a preference determiner configured to determine whether a user prefers the received tactile sensation information, based on a user tactile function f(x); and a display displaying a user preference for the received tactile sensation information.

Device, system and method for tactile sensation recognition

In one embodiment of the present invention, there is provided an MIS capacitor, including: a lower electrode formed with a semiconductor substrate having electrical conductivity and through which an electrical signal passes at a lower surface thereof; an insulating layer formed on the lower electrode; an upper electrode formed on the insulating layer and through which the electrical signal passes at an upper surface thereof; and a first conductive layer formed on side surfaces of the lower electrode so that the electrical signal passing the lower surface and an upper surface of the lower electrode passes along the side surfaces of the lower electrode, wherein the first conductive layer has electro conductivity higher than the electro conductivity of the lower electrode.

Growing community of inventors

Seongnam-si, South Korea

Dong Su Kim