Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Electronics and Telecommunications Research Institute

Hyundai Motor Company

3M Innovative Properties Company

Kia Motors Corporation

Yonsei University

Sungkyunkwan University

Nhn Entertainment Corporation

Dong-Soo Lee

Myoung-jae Lee

Chang-bum Lee

Chang-jung Kim

Seung-ryul Lee

Young-Bae Kim

Man Chang

Ji-hyun Hur

Sang-Jin Hyun

Won-Keun Chung

Sang-Yong Kim

Jae-Jung Kim

Sung-Hun Lee

David Seo

Hark Yoo

Sang-moon Lee

Seong-ho Cho

Moon-seung Yang

Eui-chul Hwang

Dong-Won Kim

Seong-jun Park

Kyung-min Kim

Sang-Wook Kwon

Sung-Bum Park

Jung-Hun Lee

Kyung-Min Kim

Sung-Ku Yeo

Seong-Ho Cho

Ravi Palaniswamy

Kang-yoon Lee

Sun Myung Choi

Wan-don Kim

Hoon-Joo Na

Hong-bae Park

Hyung-suk Jung

Young-Ho Ryu

Taek-Soo Jeon

Bong-Tae Kim

Jae-Seok Park

Jae-Yeol Song

Sang-Moon Lee

Sang-yun Kim

Hyun-ho Kim

Jae-Hyun Lee

Kwang-Shin Lim

Hyo-Keun Park

Jin-Kyu Jang

Sung-Chang Kim

Mohammad Rakib Uddin

Geun-Yong Kim

Jong-Han Lee

Hu-Yong Lee

Bin-Yeong Yoon

Bong-Kyu Kim

Dominic M Travasso

Jong-Deog Kim

Dong-In Kim

Chul-Su Jung

JungDae Park

Dong-Chul Han

Ho-Soo Jang

Mun-Seob Lee

Jeong-Hwan Suh

Seung-Yup Kim

Ji-Hyun Hur

Hamed Abbasizadeh

Sung-Kwan Bae

Young-Suk Lee

Do-Geun Jung

Su-young Bae

Sunghan Jung

Yong-kyun Sun

Hyo-keun Park

Ji-Won Eom

Jeong-hwan Suh

Min-Seok Jo

Kyung-Soo Chae

Chang-Bum Lee

Seung-yup Kim

Ami Choi

Alejandro Aldrin Agcaoili Narag, Ii

Thi Kim Nga Truong

Seung Il Huh

Jae-In Kim

Eui-Chul Hwang

Hee-Do Kim

Seong-Jun Park

Chang-Jung Kim

Seung-Ryul Lee

Myoung-Jae Lee

Moon-Seung Yang

Kim Ki-Mo

A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

Semiconductor devices

A semiconductor device may include a plurality of first active fins protruding from a substrate, each of the first active fins extending in a first direction; a second active fin protruding from the substrate; and a plurality of respective first fin-field effect transistors (finFETs) on the first active fins. Each of the first finFETs includes a first gate structure extending in a second direction perpendicular to the first direction, and the first gate structure includes a first gate insulation layer and a first gate electrode. The first finFETs are formed on a first region of the substrate and have a first metal oxide layer as the first gate insulation layer, and a second finFET is formed on the second active fin on a second region of the substrate, and the second finFET does not include a metal oxide layer, but includes a second gate insulation layer that has a bottom surface at the same plane as a bottom surface of the first metal oxide layer.

Semiconductor device

An electronic device is provided. The electronic device includes a receiving circuit configured to wirelessly receive power and output AC power, a rectifying circuit configured to rectify the AC power from the receiving circuit, wherein the rectifying circuit may include a first P-MOSFET configured to transfer a positive amplitude of power to an output terminal of the rectifying circuit while the AC power has the positive amplitude and to prevent transferring a negative amplitude of power to the output terminal of the rectifying circuit while the AC power has the negative amplitude, and a forward loss compensating circuit connected with the first P-MOSFET configured to reduce a threshold voltage of the first P-MOSFET while the AC power has the positive amplitude.

Electronic device for wirelessly receiving power and method for operating the same

A self-diagnosis method for an ignition coil includes receiving and confirming a current flag (C/F) signal through monitoring of primary current of an ignition coil; monitoring secondary current of the ignition coil upon receiving the C/F signal and confirming whether a fault flag (F/F) signal for determining whether misfire of the ignition coil occurs is input; and determining whether an abnormal signal of the ignition coil is generated based on the result of confirming the C/F signal and the F/F signal respectively.

Self-diagnosis method for ignition coil, electronic control unit for performing the self-diagnosis, and self-diagnostic signal generator for the self-diagnosis

A semiconductor device includes active regions on a semiconductor substrate, gate structures on separate, respective active regions, and source/drain regions in the semiconductor substrate on opposite sides of separate, respective gate structures. Each separate gate structure includes a sequential stack of a high dielectric layer, a first work function metal layer, a second work function metal layer having a lower work function than the first work function metal layer, and a gate metal layer. First work function metal layers of the gate structures have different thicknesses, such that the gate structures include a largest gate structure where the first work function metal layer of the largest gate structure has a largest thickness of the first work function metal layers. The largest gate structure includes a capping layer on the high dielectric layer of the largest gate structure, where the capping layer includes one or more impurity elements.

Semiconductor devices having multi-threshold voltage

A conductivity detector includes a flow channel, an electrode arrangement, and a detector. The flow channel has a tube shape with a channel diameter through which a solution including ion components flows. The electrode arrangement is on the flow channel and includes at least an anode and at least a cathode. The anode and cathode are spaced apart by an electrode gap less than or equal to the channel diameter. The detector is connected to the electrode arrangement to detect electrical conductivity of the ion components.

Conductivity detector and ion chromatography system including the same

Flexible LED assemblies that have coplanar integrated conductive features upon which an LED can be mounted, and methods of making such LED assemblies are described. The flexible LED assembly includes a flexible polymer substrate, a first conductive feature, a second conductive feature and an LED. The first conductive feature is positioned both within the flexible substrate and on a surface of the flexible substrate. The second conductive feature is positioned both within the flexible substrate and on a surface of the flexible substrate. The first and second conductive features are separated by a gap therebetween. The LED is mounted on both the first and second conductive features, and the first and second conductive features are substantially coplanar with one another.

Flexible circuits with coplanar conductive features and methods of making same

The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

Semiconductor device and method of fabricating the same

Disclosed herein are a handheld device and method for measuring the quality of an optical link, which are capable of simultaneously measuring the strength of an optical signal and the quality of an optical link at an optical network terminal in a Fiber-to-the-Home (FTTH) network. A presented handheld device for measuring a quality of an optical link includes an optical signal input port for receiving an optical signal, an optical power measurement unit for measuring a power of the optical signal, an output unit for outputting one or more of a measured power value of the optical signal and results of quality measurement of an optical link, based on interworking with an optical network terminal, and a control unit for storing the measured power value of the optical signal and performing a process for quality measurement of the optical link.

Handheld device and method for measuring quality of optical link

An integrated circuit device includes a substrate including an active region, an interfacial layer including a lower insulating layer on the active region, the lower insulating layer doped with a chalcogen element having an atomic weight equal to or greater than 16, a gate insulation layer on the interfacial layer, and a gate electrode on the gate insulation layer.

Integrated circuit device having an interfacial layer and method of manufacturing the same

Disclosed herein is an apparatus and method for detecting an optical line fault in a Passive Optical Network (PON). The apparatus includes an optical distribution unit configured to, when a multiplexed signal of a downstream light signal and a monitoring light signal is input, distribute the multiplexed signal to an Optical Network Unit (ONU) of a first optical path and to a second optical path. An optical layer management unit is installed in the second optical path and is configured to set a time at which the monitoring light signal of the multiplexed signal provided to the second optical path is received to a starting time of monitoring light measurement, compare a monitoring light signal reflected and returned from the ONU with a signal pattern obtained when no fault occurs, and then determine whether a fault has occurred in a distribution network.

Apparatus and method for detecting optical line fault in passive optical network

A game exposing method and system is provided. The game exposing method includes displaying a game web site in a first folder of a file manager application of a user terminal; and displaying a game provided from the game web site in a second folder of the file manager application. Accordingly, it is possible to easily access the game portal web site and the game pages to play the games while operating in the file manager application.

Method and system for exposing games

Growing community of inventors

Gunpo-si, South Korea

Dong-Soo Lee