Skhynix Inc.

Samsung Electronics Co., Ltd.

Retro-Semi Technologies, LLC

Dong-Soo Kim

Sang-min Lee

Young-Kwon Yoon

Hwa-Young Kang

Moon-Soo Kim

Se-Han Kwon

Jong-Hun Won

Eun-Jeong Kim

Dong-Hoon Jang

Shuichi Shimokawa

Ki-Huk Lee

Jin-Yul Lee

Sung-Won Lim

Keun Hang Heo

Tae-Kyung Oh

Jee-Hyun Kim

Yeo-Tak Youn

Hyun-Jin Chang

Sang-Min Lee

Yun-Sang Oh

Seog-Heon Ham

Jae-Hoon Choi

Taek-Seong Jeong

Sung-Eun Kim

Chang-Wook Moon

Jae-Phil Boo

Gun-Hee Han

Hwa-Yong Kang

Hyun-Sik Shim

Dong-Myung Lee

Hae-Sun Lee

Keon-Sik Seo

Seung-woon Lee

Jian Chang

Kang-Min Paek

Tae-Sin Ha

Min-Su Joo

Myung-Gon Song

Min Kyu Chu

A semiconductor device includes: a gate trench formed into a semiconductor substrate; a gate dielectric layer formed in the gate trench to cover an inside surface of the gate trench; and a gate electrode disposed over the gate dielectric layer to fill the gate trench, wherein the gate electrode includes: second crystal grains formed in the gate trench; and first crystal grains disposed between the second crystal grains and the gate dielectric layer and having a smaller crystal grain size than the second crystal grains.

Semiconductor device including buried gate structure and method for fabricating the same

Disclosed is a semiconductor device for improving a gate induced drain leakage and a method for fabricating the same, and the method for fabricating semiconductor device may include forming a trench in a substrate; forming a gate dielectric layer over the trench, embedding a first dipole inducing portion in the gate dielectric layer on a lower side of the trench, filling a lower gate over the first dipole inducing portion, embedding a second dipole inducing portion in the gate dielectric layer on an upper side of the trench and forming an upper gate over the lower gate.

Semiconductor device having buried gate structure and method for fabricating the same

A method for fabricating a semiconductor device includes forming a trench in a substrate, forming a gate dielectric layer on a surface of the trench, forming a lower gate, which partially fills the trench, over the gate dielectric layer, forming a low work function layer over the lower gate, forming a spacer over the low work function layer, etching the low work function layer to be self-aligned with the spacer in order to form vertical gate on both upper edges of the lower gate, and forming an upper gate over the lower gate between inner sidewalls of the vertical gate.

Disclosed is a semiconductor device for improving a gate induced drain leakage and a method for fabricating the same, and the method may include forming a trench in a substrate, lining a surface of the trench with an initial gate dielectric layer, forming a gate electrode to partially fill the lined trench, forming a sacrificial material spaced apart from a top surface of the gate electrode and to selectively cover a top corner of the lined trench, removing a part of the initial gate dielectric layer of the lined trench which is exposed by the sacrificial material in order to form an air gap, and forming a capping layer to cap a side surface of the air gap, over the gate electrode.

Semiconductor device having an air gap and method for fabricating the same

Disclosed is a semiconductor device for improving a gate induced drain leakage and a method for fabricating the same, and the semiconductor device includes a substrate, a first doped region and a second doped region formed to be spaced apart from each other by a trench in the substrate, a first gate dielectric layer over the trench, a lower gate over the first gate dielectric layer, an upper gate over the lower gate and having a smaller width than the lower gate, and a second gate dielectric layer between the upper gate and the first gate dielectric layer.

A method of an electronic device including an image sensor that acquires an optical signal corresponding to an object and a controller that controls the image sensor, is provided. The method includes identifying a mode for generating an image corresponding to the object by using the optical signal, determining a setting of at least one image attribute to be used for generating the image at least based on the mode, generating image data by using pixel data corresponding to the optical signal at least based on the setting, and displaying the image corresponding to the object through a display functionally connected to the electronic device at least based on the image data.

Electronic device and method for generating image data

A semiconductor device includes at least one trench extending into a semiconductor substrate and lined with a gate dielectric layer; a dipole inducing layer covering a lowermost portion of the lined trench; a gate electrode covering the dipole inducing layer and filled in the lined trench; and doping regions, in the semiconductor substrate, separated from each other by the lined trench and separated from the dipole inducing layer.

Semiconductor device having buried gate structure, method for manufacturing the same, and memory cell having the same

The present invention relates to a sensor for capturing an image and a method for controlling the same. An electronic device according to various embodiments of the present invention comprises an image sensor and one or more processors. The one or more processors may be configured to receive a signal for capturing a moving image and to acquire a first plurality of image frames according to a first frame rate through the image sensor in response to the signal, the first image frames comprising a first image frame and a second image frame corresponding to an external object. The acquiring operation comprises an operation of generating a first part of a moving image according to a second frame rate, which is lower than the first frame rate, using some image frames among the first plurality of image frames. The one or more processors may be configured to determine a change related to the external object at least on the basis of a brightness difference between a first brightness corresponding to the first image frame and a second brightness corresponding to the second image frame, to acquire a second plurality of image frames corresponding to the external object, when the change satisfies a predesignated condition, through the image sensor according to the first frame rate or a third frame rate that is different from the first frame rate, and to generate a second part of the moving image using one or more image frames among the second plurality of image frames.

Electronic device for changing frame rate of capturing moving image on basis of change between plurality of images and method for controlling same

An electronic device includes an image capturing device and a processor electrically connected with the image capturing device, wherein the processor is configured to obtain a first portion of a video at a first capturing speed during a first period using the image capturing device, control a first notification to indicate obtaining a second portion of the video at a set second capturing speed when the second capturing speed is set as a speed of capturing the video based on a result of analyzing the first obtained portion, and obtain the second portion at the second capturing speed during a second period following the first period using the image capturing device.

Electronic device and method for capturing image in electronic device

Growing community of inventors

Gyeonggi-do, South Korea

Dong-Soo Kim