Lg Electronics Inc.

Samsung Display Co., Ltd.

Korea Airports Corporation

Samsung Electronics Co., Ltd.

Lg Innotek Co., Ltd.

Electronics and Telecommunications Research Institute

Skhynix Inc.

K. C. Tech Co., Ltd.

Goldstar, Co., Ltd.

Postech Academy-industry Foundation

Korea Institute of Machinery & Materials

Akzo Nobel Coatings International B.v.

Lg Innotek

Samsung Co., Ltd.

Jin Ro Limited

Dong Soo Kim

Jae Hyun Lim

Hee Suk Pang

Yang-Won Jung

Hyen O Oh

Yang Won Jung

Hyen-O Oh

Hyo Jin Kim

Sung Yong Yoon

Hyun Kook Lee

Ji-Eun Lee

Won Kyu Kwak

Hyun-Chol Bang

Jun Won Choi

Chang Soo Pyon

Tae Young Choi

Sungho Hong

Seok Jin Kang

Yun Ha Kim

Chul Soo Lee

Kyung Shik Roh

Seung-Kyu Lee

Ji-Hyun Ka

Tae Hoon Kwon

Seung Ji Cha

Han-Sung Bae

Jung Hun Yi

Hey Jin Shin

Cheol Won Lee

Young Tae Yun

Won Ho Kim

Kwang Ho Yang

Jung Hyun Oh

Yo Sik Kim

Sang Kyun Noh

Yoon Jung Chung

Su Dong Hong

Sung Young Yoon

Young Seop Lim

Tae Yun Jeong

Gi Young Do

Kwang-Min Kim

Hyun Ae Park

Joong-Soo Moon

Young Bo Shim

Oh Jo Kwon

Joon Chul Goh

Won Jun Hwang

Ki Wook Kim

Sang Hyun Heo

Hyung Gun Ma

Joong Soo Moon

Sang Hwan Kim

Chang Kyu Jin

Kwang Chul Jung

Mi Na Kim

Young Kwon Yoon

Hyeon O Oh

Yong Jun Jo

Jae Phil Boo

Seung Sang Cho

Seok Cheol Yang

Keon Sik Seo

Chan Woon Jeon

Young Soo Kim

Seung Kyu Lee

Ki Hong Lee

Suk June Yoon

Jong Hoon Won

Tae Kyun Kim

Young Do Kwon

Seung Yong Hyung

Seung Woo Sung

Sang Ho Choi

Jong Ho Bang

Lokesh Rayasandra Boregowda

Hyun Woong Kim

Hyo Seok Hwang

Byung Chang Kang

Byung Moo Lee

Kyung Hyun Choi

Choon Soo Lee

Jin Koo Chung

Taik Min Lee

Byung Kwon Choi

Moon Soo Kim

Bum Man Kim

Ki Wook Sohn

Nam Jung Lee

Min Young Park

Se Han Kwon

Jung Ho Seo

Prajit Sivasankaran Nair

Seong Min Kim

Kwan Ho Lee

Hyung Sik Kim

Jang Hong Yoon

Chung Hwan Kim

Xiangsheng Huang

Woon Tahk Sung

The present invention relates to a semiconductor device with improved reliability and a method for manufacturing the same. A semiconductor device according to the present invention may comprise: a substrate including a gate trench; a gate insulating layer formed on a surface of the gate trench; and silicon-doped metal nitride on the gate insulating layer, wherein the silicon-doped metal nitride has a silicon concentration of less than 1 at %.

Semiconductor device and method for manufacturing the same

A semiconductor device includes: a trench formed in a substrate; a gate dielectric layer covering sidewalls and a bottom surface of the trench; a first gate electrode gap-filling a bottom portion of the trench over the gate dielectric layer; a second gate electrode including a metal nitride which is the same as the first gate electrode over the first gate electrode and doped with a low work function adjusting element; a buffer layer covering a top surface of the second gate electrode and the gate dielectric layer exposed over second gate electrode; and a capping layer gap-filling the other portion of the trench over the buffer layer.

Semiconductor device having metal nitride gate doped with a low work function

According to embodiments of the disclosure, a pixel includes a driving transistor including a gate electrode, a first electrode electrically connected to a first power line and a second electrode electrically connected to a light emitting element, a body of a semiconductive layer constituting the driving transistor being electrically connected to the first power line.

Pixel and display device including the same

A display device includes signal lines and pixels connected thereto. A first pixel includes a first transistor including a first gate electrode, a first channel region overlapping the first gate electrode, a first source region, and a second drain region facing the first source region, with the first channel region interposed between the first source region and the second drain region. A third transistor includes a third gate electrode, a third channel region overlapping the third gate electrode, a third drain region connected to the first gate electrode, and a third source region facing the third drain region with the third channel region interposed between the third source region and the third drain region. A shielding part overlaps a boundary between the third source region and the third channel region and does not overlap a boundary between the third drain region and the third channel region.

Display device having an emission layer

A pixel may include: a first transistor including a second electrode, a first electrode electrically connected to a first power line, and a gate electrode connected to a first node; a second transistor including a second electrode, a first electrode electrically connected to a data line, and a gate electrode electrically connected to a first scan line; a third transistor connected between the first node and the data line, and including a gate electrode electrically connected to a second scan line; a first capacitor including a first electrode connected to the second electrode of the second transistor, and a second electrode connected to the first node; a second capacitor connected between the first power line and the first node; and a light emitting element between a second power line and the first transistor, and including a second electrode electrically connected to the second power line.

Present invention relates to a semiconductor device including a buried gate structure. A semiconductor device comprises a substrate; a first fluorine-containing layer over the substrate; a trench formed in the first fluorine-containing layer and extended into the substrate; a gate dielectric layer formed over the trench; a gate electrode formed over the gate dielectric layer and filling a portion of the trench; a second fluorine-containing layer formed over the gate electrode; and a fluorine-containing passivation layer between the gate dielectric layer and the gate electrode.

Semiconductor device with buried gate structure

A display device includes: a first substrate including a display area and a non-display area; a second substrate facing the first substrate; a sealing member disposed in the non-display area and coupling the first substrate to the second substrate; a sensing contact area disposed at an inner side of the sealing member; a sensing signal line disposed in the sensing contact area; a sensing contact pattern disposed in the sensing contact area and electrically connected to the sensing signal line; a control signal line disposed between the first substrate and the sensing signal line; and a shielding pattern disposed between the control signal line and the sensing signal line, the shielding pattern overlapping the control signal line or the sensing signal line.

Display device

A display device includes scan lines disposed in a first direction; data lines disposed in a second direction substantially perpendicular to the first direction; and unit pixel regions adjacent to the scan lines and the data lines, each unit pixel region including sub-pixels. A portion of an opening region of at least one of the sub-pixels overlaps a unit pixel region adjacent to a unit pixel region corresponding to the at least one of the sub-pixels, and a side of the opening region of the at least one of the sub-pixels extends in a third direction inclined with respect to each of the first direction and the second direction.

A display device includes a peripheral area around a display area, a plurality of pixels in the display area, and a plurality of signal lines connected to the pixels. The signal lines include a plurality of data lines connected to the pixels, a crack detection line connected to first data lines among the data lines through a first transistor, and a control line connected to a gate of the first transistor. The crack detection line is in the peripheral area.

Display device including crack detection line

An electronic device is disclosed. The electronic device may comprise: an image sensor for acquiring raw image data corresponding to light of infrared band and visible light band, with respect to an external object; and a processor, wherein the processor is configured to: receive a request for acquiring the raw image data corresponding to the external object; on the basis of the request configured to be performed using a first function of the image sensor, generate an RGB image related to the external object by using first raw image data corresponding to the light of visible light band, obtained through the image sensor, and on the basis of the request configured to be performed using a second function of the image sensor, perform biometric authentication related to the external object by using second raw image data corresponding to the light of infrared band, obtained through the image sensor. In addition, various embodiments recognized through the specification are possible.

Electronic device for providing function by using RGB image and IR image acquired through one image sensor

A display device includes a first substrate having a display area, a non-display area surrounding the display area, and a protruding area. A first sensing pad part is formed in the non-display area adjacent to the protruding area. A circuit element layer is positioned in the display area. A display element layer is positioned on the circuit element layer and includes a light-emitting layer and a second electrode on the light-emitting layer. A second substrate overlaps the first substrate and does not overlap the protruding area. A second sensing pad part is formed on the second substrate to overlap with the first sensing pad part. A sealing member is disposed along a border of the second substrate and attaches the first substrate to the second substrate. The first sensing pad part and the second sensing pad part are disposed between a border of the second electrode and the sealing member.

An electronic device includes a housing including a first surface, a display exposed through a first portion of the first surface, a first light emitting source exposed through a second portion of the first surface, an imaging sensor circuit that is exposed through a third portion of the first surface and is electrically connected with the first light emitting source, and a processor that is disposed in the housing and is electrically connected with the imaging sensor circuit. In addition, various embodiments recognized through the specification are possible.

Method for recognizing object by using camera, and electronic device supporting same

Growing community of inventors

Seoul, South Korea

Dong Soo Kim