National Chung Hsing University

Other

Kabushiki Kaisha Toshiba

Bridgelux Incorporated

Ray-hua Horng

National Chung-hsien University

Dong-Sing Wuu

Ray-Hua Horng

Chao-Kun Lin

Shao-Hua Huang

Tsung-Yen Tsai

Chuang-Yu Hsieh

Wei-Ting Lin

Chia-Cheng Wu

Woei-Kai Wang

Po-Wei Chen

Ken-Yen Chen

Shuo-Huang Yuan

Hsueh-Wei Wu

Tsing-Ping Liao

Shih-Hao Chuang

Kuo-Sheng Wen

Po-Rung Lin

Cheng-Ying Yen

Shih-Ting Chen

Tshung-Han Tsai

A multi-functional control device includes a casing unit, and press button modules disposed on a main circuit board in the casing unit. Each press button module includes a sub-circuit board connected to the main circuit board, a micro-contact switch mounted on the sub-circuit board, an auxiliary case removably mounted on the micro-contact switch, a driving circuit board removably disposed in the auxiliary case to connect the sub-circuit board, a display module removably disposed on the auxiliary case. A transparent cap covers the display module and the auxiliary case, and is detachably connected to the auxiliary case.

Multi-functional control device with display buttons

A large area passive micro light-emitting diode matrix display includes a plurality of micro light-emitting diode matrices and an external circuit component. Each of the micro light-emitting diode matrices includes a first layer, a plurality of light-emitting layers disposed on the first layer, a plurality of second layers disposed on the light-emitting layers, respectively, a plurality of first inner electrode layers disposed on the second layers, respectively, and a second inner electrode layer which is disposed on the first layer, and which includes a first portion and a second portion having a plurality of through holes to accommodate said light-emitting layers, respectively.

Large area passive micro light-emitting diode matrix display

A passive micro light-emitting diode matrix device with uniform luminance includes a micro light-emitting diode matrix including a plurality of micro light-emitting matrices, each of which includes a first layer, a plurality of light-emitting layers disposed on the first layer, a plurality of second layers disposed on the light-emitting layers, respectively, a plurality of first inner electrode layers disposed on the second layers, respectively, and a second inner electrode layer which is disposed on the first layer, and which includes a first portion and a second portion having a plurality of through holes to accommodate said light-emitting layers, respectively.

Passive micro light-emitting diode matrix device with uniform luminance

A patterned substrate for epitaxially growing a semiconductor material includes: a top surface; and a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and is defined by n crystal planes, n being an integer not less than 3. Each of the crystal planes has an upper edge meeting the top surface and is adapted for epitaxially growing the semiconductor material. A maximum distance from one of the upper edges of one of the recesses to an adjacent one of the upper edges of an adjacent one of the recesses is not greater than 500 nm.

Patterned substrate for epitaxially growing semiconductor material, and method for patterning a substrate

This invention provides a light-emitting chip device with high thermal conductivity, which includes an epitaxial chip, an electrode disposed on a top surface of the epitaxial chip and a U-shaped electrode base cooperating with the electrode to provide electric energy to the epitaxial chip for generating light by electric-optical effect. The epitaxial chip includes a substrate and an epitaxial-layer structure with a roughening top surface and a roughening bottom surface for improving light extracted out of the epitaxial chip. A thermal conductive transparent reflective layer is formed between the substrate and the epitaxial-layer structure. The electrode base surrounds the substrate, the transparent reflective layer and a first cladding layer of the epitaxial-layer structure to facilitate the dissipation of the internal waste heat generated when the epitaxial chip emitting light. A method for manufacturing the chip device of the present invention is provided.

Light-emitting chip device with high thermal conductivity

A light emitting device includes: a light emitting layered structure; an electrode unit connected to the light emitting layered structure and including a transparent electrode layer of a primary metal oxide which is stacked on the light emitting layered structure along a stacking direction; and a total-internal-reflection suppression material dispersed in the transparent electrode layer and containing a secondary metal oxide that is different from the primary metal oxide. The secondary metal oxide has a concentration gradient within the transparent electrode layer along the stacking direction. The light output power of the light emitting device may be increased by about 44% as compared to a conventional light emitting device.

Light emitting device with anti-total-internal-reflection capability

A patterned substrate for epitaxially forming a light-emitting diode includes: a top surface; a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and each of which is defined by a recess-defining wall, the recess-defining wall having a bottom wall face, and a surrounding wall face that extends from the bottom wall face to the top surface; and a plurality of protrusions, each of which protrudes upwardly from the bottom wall face of the recess-defining wall of a respective one of the recesses. A light-emitting diode having the patterned substrate is also disclosed.

Patterned substrate and light-emitting diode having the same

A light emitting diode includes an epitaxial substrate, an active layer, a tunneling layer, a current spreading layer, and an electrode unit. The active layer includes a first conductive type film, a quantum well structure, and a second conductive type film that is made from AlInGaN, wherein 0&#x3c;y&#x3c;1, 0&#x2266;z&#x3c;1, and 0&#x3c;(y+z)&#x2266;1. The tunneling layer is stacked on the second conductive type film and is made from AlInN, wherein 0&#x3c;x&#x3c;1 and x&#x3e;y. The tunneling layer has a band gap greater than that of the second conductive film. The current spreading layer is stacked on the tunneling layer.

Light emitting diode

This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 &#x3bc;m rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.

Light-emitting diode chip with high light extraction and method for manufacturing the same

A method for fabricating semiconductor devices includes: (a) forming a layered structure that includes a temporary substrate, a plurality of spaced apart sacrificial film regions on the temporary substrate, and a plurality of valley-and-peak areas among the sacrificial film regions; (b) growing laterally and epitaxially an epitaxial film layer over the sacrificial film regions and the valley-and-peak areas, wherein gaps are formed among the epitaxial film layer and the valley-and-peak areas; (c) forming a conductive layer to contact the epitaxial film layer; (d) forming a plurality of grooves to divide the epitaxial film layer and the conductive layer into a plurality of epitaxial structures on the temporary substrate; and (e) removing the temporary substrate and the sacrificial film regions from the epitaxial structures by etching the sacrificial film regions through the gaps and the grooves.

Method for fabricating semiconductor devices

A semiconductor substrate includes: a base layer; a sacrificial layer that is formed on a base layer and that includes a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each sacrificial film region has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages communicate spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer.

Semiconductor substrate for growth of an epitaxial semiconductor device

A method for making an epitaxial structure includes: (a) providing a sacrificial layer on a temporary substrate, the sacrificial layer being made of gallium oxide; and (b) growing epitaxially an epitaxial layer unit over the sacrificial layer.

Epitaxial structure and method for making the same

A light emitting diode includes: an electrically conductive permanent substrate having a reflective top surface; an epitaxial film disposed on the reflective top surface of the permanent substrate and having an upper surface and a roughened lower surface that is opposite to the upper surface, the roughened lower surface having a roughness with a height of not less than 300 nm and a plurality of peaks which are in ohmic contact with the reflective top surface; an optical adhesive filled in a gap between the lower surface and the reflective top surface and connecting the epitaxial film to the permanent substrate; and a top electrode disposed on the upper surface and in ohmic contact with the epitaxial film.

A method for fabricating an epitaxial structure includes: (a) forming over a temporary substrate a patterned sacrificial layer that partially exposes the temporary substrate; (b) growing laterally and epitaxially a temporary epitaxial film over the patterned sacrificial layer and the temporary substrate; (c) forming over the temporary epitaxial film an etching-stop layer; (d) forming an epitaxial layer unit over the etching-stop layer; (e) removing the patterned sacrificial layer using a first etchant; and (f) removing the temporary epitaxial film using a second etchant.

Intermediate epitaxial structure and method for fabricating an epitaxial structure

A method for fabricating semiconductor devices includes: (a) forming over a temporary substrate a sacrificial film layer; (b) growing laterally and epitaxially an epitaxial film layer; (c) forming over the epitaxial film layer a patterned mask that covers partially the epitaxial film layer and that defines a plurality of through holes to expose a plurality of epitaxial surface regions, respectively; (d) forming a plurality of conductive members respectively in the through holes and on the epitaxial surface regions; (e) removing the patterned mask and removing a part of the epitaxial film layer and a part of the sacrificial film layer beneath the patterned mask; (f) removing the sacrificial film layer; and (g) removing the temporary substrate.

Growing community of inventors

Taichung, Taiwan

Dong-Sing Wuu