General Electric Company

Momentive Performance Materials Gmbh

Electric Power Research Institute Incorporated

Other

Soraa, Inc.

Diamond Innovations. Inc.

Slt Technologies, Inc.

Dong-Sil Park

Mark Philip D'Evelyn

Huicong Hong

Kristi Jean Narang

Steven Francis LeBoeuf

Peter Micah Sandvik

Larry Burton Rowland

Manfred W Breiter

John Thomas Leman

Debajyoti Chatterji

Stephen Daley Arthur

Xian-An Cao

Sundeep Kumar

Randall N King

Larry Qiang Zeng

Jian Wu

Fred Sharifi

Craig Stringer

Myles Standish Peterson, Ii

James Anthony Ruud

Robert John Zabala

Jeffrey Allan Pfaendtner

D Sangeeta

Theodore Robert Grossman

Suresh Shankarappa Vagarali

Anping Zhang

Joell Randolph Hibshman, Ii

Thomas Joseph Cartier

Louis Navias

Thomas R Anthony

Joseph David Rigney

Andrew Philip Shapiro

Yuk-Chiu Lau

Steven William Webb

Thomas Francis McNulty

Clifford L Spiro

Steven Alfred Tysoe

Christopher Long

Digamber Gurudas Porob

William Edwin Jackson

Bruce S Dunn

Mamatha Nagesh

Victor Lienkong Lou

Xian-an Cao

David Alan Nye

Yavuz Kadioglu

Yue Meng

David Charles Pender

Zheng Chen

Vinayak Hassan Vishwanath

Rendall N King

Mark Philip D'evelyn

Miles Standish Peterson

Joell Randolph Hibshman

Steven Francis Leboeuf

A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm, with an absorbance per unit thickness of greater than about 0.01 cm. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3&#xd7;10per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution

A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm, with an absorbance per unit thickness of greater than about 0.01 cm. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3&#xd7;10per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Crystalline gallium nitride containing flourine

Method of making a gallium nitride crystalline composition having a low dislocation density

A sealing glass composition for providing a glass seal in an electrochemical cell is presented. The sealing glass composition includes boron oxide, aluminum oxide, barium oxide, and zirconium oxide, and the glass composition is substantially free of silicon oxide and titanium oxide. The electrochemical cell incorporating the glass seal is also provided.

Sealing glass composition and article

There is provided a GaN single crystal at least about 2.75 millimeters in diameter, with a dislocation density less than about 10cm, and having substantially no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.

Gallium nitride crystal and method of making same

A seal structure is provided for an energy storage device. The seal structure includes a first sealing glass composition and a second sealing glass composition joining an ion-conducting first ceramic to an electrically insulating second ceramic. The first sealing glass composition includes less than or equal to about 20 weight percent silica based on the weight of the first sealing glass composition. The second sealing glass composition includes greater than or equal to about 40 weight percent silica based on the weight of the second sealing glass composition. A method for making the seal structure is provided. An article comprising the seal structure is also provided.

Seal structure and associated method

A sealing glass for an energy storage device is provided. The sealing glass includes silicon dioxide, boron oxide, aluminum oxide, sodium oxide and zirconium oxide. Methods for preparing the sealing glass and the energy storage device incorporating the sealing glass are also provided.

Sealing glass composition, method and article

A composition including a polycrystalline metal nitride having a number of grains is provided. These grains have a columnar structure with one or more properties such as, an average grain size, a tilt angle, an impurity content, a porosity, a density, and an atomic fraction of the metal in the metal nitride.

Crystalline composition, device, and associated method

A seal structure is provided for an energy storage device. The seal structure includes a sealing glass joining an ion-conducting first ceramic to an electrically insulating second ceramic. The sealing glass has a composition that includes about 48 weight percent silica, about 20 weight percent to about 25 weight percent boria, about 20 weight percent to about 24 weight percent alumina, and about 8 weight percent to about 12 weight percent sodium oxide based on the total weight of the sealing glass composition. A method for making the seal structure is provided. An article comprising the seal structure is also provided.

A composition including a polycrystalline metal nitride having a number of grains is provided. These grains have a columnar structure with one or more properties such as, an average grain size, a tilt angle, an impurity content, a porosity, a density, and an atomic fraction of the metal in the metal nitride. An apparatus for preparing a metal nitride is provided. The apparatus may include a housing having an interior surface that defines a chamber and an energy source to supply energy to the chamber. A first inlet may be provided to flow a nitrogen-containing gas into the chamber. Raw materials may be introduced into the chamber through a raw material inlet. A second inlet may be provided to flow in a halide-containing gas in the chamber. The apparatus may further include a controller, which communicates with the various components of the apparatus such as, sensors, valves, and energy source, and may optimize and control the reaction.

Apparatus for making crystalline composition

A method of making a metal nitride is provided. The method may include introducing a metal in a chamber. A nitrogen-containing material may be flowed into the chamber. Further, a hydrogen halide may be introduced. The nitrogen-containing material may react with the metal in the chamber to form the metal nitride.

Method for making crystalline composition

A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3&#xd7;10per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the crystalline composition. The volume may have at least one dimension that is about 2.75 millimeters or greater, and the volume may have a one-dimensional linear defect dislocation density of less than about 10,000 per square centimeter.

Crystalline composition, wafer, device, and associated method

A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 10cm, and is substantially free of tilt boundaries.

Gallium nitride crystals and wafers and method of making

A method for growing a nitride crystal and a crystalline composition selected from one of AlN, InGaN, AlGaInN, InGaN, and AlGaNInN is provided. The composition comprises a true single crystal, grown from a single nucleus, at least 1 mm in diameter, free of lateral strain and tilt boundaries, with a dislocation density less than about 10cm.

Method for forming nitride crystals

A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm, with an absorbance per unit thickness of greater than about 0.01 cm.

Crystalline composition, wafer, and semi-conductor structure

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