Samsung Electronics Co., Ltd.

Dong-sik Park

Jung-Hoon Han

Dong-Wan Kim

Young-chan Kim

Sungjin Kim

Hyeon-Woo Jang

Sang-hak Lee

Jihoon Chang

Se-keun Park

Ji Seok Hong

Seok-ho Shin

Won-chul Lee

Seungmo Kang

Ji Hoon Chang

Joonsuk Park

Jae-hyeon Jeon

Keonhee Park

The present disclosure provides a semiconductor memory device capable of improving reliability and performance. The semiconductor memory device comprises a substrate including a cell region and a peripheral region around the cell region, a cell region isolation film which defines the cell region, a bit line structure in the cell region, a first peripheral gate structure on the peripheral region of the substrate, the first peripheral gate structure comprising a first peripheral gate conduction film and a first peripheral capping film on the first peripheral gate conduction film, a peripheral interlayer insulating film around the first peripheral gate structure and an insertion interlayer insulating film on the peripheral interlayer insulating film and the first peripheral gate structure, and including a material different from the peripheral interlayer insulating film. An upper face of the peripheral interlayer insulating film is lower than an upper face of the first peripheral capping film.

Semiconductor memory devices and methods for fabricating the same

Disclosed are semiconductor devices and their fabrication methods. The semiconductor device comprises a substrate including a peripheral block and cell blocks each including a cell center region, a cell edge region, and a cell middle region, and bit lines extending on each cell block in a first direction. The bit lines include center bit lines, middle bit lines, and edge bit lines. The bit line has first and second lateral surfaces opposite to each other in a second direction. The first lateral surface straightly extends along the first direction on the cell center region, the cell middle region, and the cell edge region. The second lateral surface straightly extends along the first direction on the cell center region and the cell edge region, and the second lateral surface extends along a third direction, that intersects the first direction and the second direction, on the cell middle region.

Semiconductor device and method of fabricating the same

The semiconductor device includes a substrate including an integrated circuit and a contact that are electrically connected to each other, an insulation layer covering the substrate and including metal lines, and a through electrode electrically connected to the integrated circuit. The insulation layer includes an interlayer dielectric layer on the substrate and an intermetal dielectric layer on the interlayer dielectric layer. The metal lines include a first metal line in the interlayer dielectric layer and electrically connected to the contact, and a plurality of second metal lines in the intermetal dielectric layer and electrically connected to the first metal line and the through electrode. The through electrode includes a top surface higher than a top surface of the contact.

Semiconductor devices having through electrodes and methods for fabricating the same

Semiconductor devices are provided. A semiconductor device includes a substrate including a plurality of active regions that extend longitudinally in a direction and an isolation region that electrically isolates the plurality of active regions from each other. The semiconductor device includes a gate trench that extends across the plurality of active regions and the isolation region. The semiconductor device includes a gate structure that extends in the gate trench. The semiconductor device includes a gate dielectric layer that is between the gate trench and the gate structure, in each of the plurality of active regions. The gate structure has a first width in the direction in each of the plurality of active regions and has a second width in the direction in the isolation region that is different from the first width.

Semiconductor devices including a gate structure having multiple widths

A circuit board comprises a mother substrate including first and second scribing regions, the first scribing region extending in first direction, the second scribing region extending in second direction, the first and second directions crossing each other, the mother substrate including chip regions defined by the first and second scribing regions, and a through via penetrating the chip regions of the mother substrate. The mother substrate comprises a first alignment pattern protruding from a top surface of the mother substrate. The first alignment pattern is disposed on at least one of the scribing regions.

Circuit boards and semiconductor packages including protruding pattern on substrate

A semiconductor chip is provided including an integrated circuit on a substrate; pads electrically connected to the integrated circuit; a lower insulating structure defining contact holes exposing the pads, respectively; and first, second and third conductive patterns electrically connected to the pads. The second conductive pattern is between the first conductive pattern and the third conductive pattern when viewed from a plan view. Each of the first to third conductive patterns includes a contact portion filling the contact hole, a first conductive line portion extending in one direction on the lower insulating structure, and a bonding pad portion. Ends of the bonding pad portions of the first and third conductive patterns protrude in the one direction as compared with an end of the bonding pad portion of the second conductive pattern when viewed from a plan view.

Semiconductor chips including redistribution interconnections and related semiconductor packages

A semiconductor device includes a substrate; a hydrogen insulating layer disposed on the substrate and including hydrogen ions; a first level layer disposed on the substrate and including a first wire and a second wire; a second level layer disposed on the substrate at a different level from the first level layer and including a third wire; an interlayer insulating layer disposed between the first level layer and the second level layer; a diffusion prevention layer contacting the third wire; a contact plug penetrating the interlayer insulating layer and electrically connecting the second wire to the third wire; and a dummy contact plug penetrating the interlayer insulating layer. The dummy contact plug contacts the first and second level layers, is spaced apart from the diffusion prevention layer, and is configured to provide a movement path for the hydrogen ions in the hydrogen insulating layer.

Semiconductor device including an electrically floated dummy contact plug and a method of manufacturing the same

A semiconductor device may include a first interlayer dielectric layer including a plurality of contacts, a plurality of interconnection patterns disposed on the first interlayer dielectric layer and connected to the contacts, respectively, and a second interlayer dielectric layer disposed on the first interlayer dielectric layer and covering the interconnection patterns. Each of the interconnection patterns may include a first metal pattern, a second metal pattern disposed on the first metal pattern, a first barrier pattern between the contact and the first metal pattern, and a second barrier pattern between the first metal pattern and the second metal pattern. The second metal pattern may expose a portion of a top surface of the second barrier pattern, and the second interlayer dielectric layer may include an air gap between the interconnection patterns adjacent to each other.

Semiconductor devices and the method of manufacturing the same

A display apparatus displaying a picture based on an input video signal includes an auto-adjustment button to select an implement of an auto-adjustment function, and a controller to implement a quick auto-adjustment function when the input video signal is determined to be changed in a display mode on the basis of the input video signal, and to implement a detailed auto-adjustment function when the auto-adjustment function is selected by the auto-adjustment button. In the display apparatus and a control method thereof, the auto-adjustment function is differently implemented according to the auto-adjustment mode and the selection of the auto-adjustment button.

Display apparatus to display a picture according to an input video signal and control method thereof

A method of controlling a display apparatus displaying a picture according to an input video signal including a horizontal synchronous signal and a vertical synchronous signal includes setting one or more exclusive display modes, setting whether to apply an auto-adjustment function to the video signal, determining a display mode of the video signal according to the horizontal and vertical synchronous signals when the auto-adjustment function is set to operate, and performing the auto-adjustment function when the determined display mode is not equal to any one of the one or more exclusive display modes. The display apparatus and the control method thereof selectively perform the auto-adjustment function according to the display mode of the input video signal.

Display apparatus and control method thereof

A display system displaying an image on a basis of an image signal received from an image signal source, including: a key signal generator generating a key signal according to a user's manipulation; a configuration controller providing a GUI for controlling a display state of the image, and outputting a control order corresponding to the user's manipulation on the GUI, and detecting whether a user's access to the GUI is limited; and a display controller controlling the display state of the image on a basis of the control order received from the configuration controller, recognizing the key signal as a first control signal to implement a pre-set control function according to the recognized first control signal if the key signal is input from a key signal input part while determining that the user's access to the GUI is not limited, and recognizing the key signal as a second control signal to control the display state of the image according to the recognized second control signal if the key signal is input from the key signal input part while determining that the user's access to the GUI is limited.

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Suwon-si, South Korea

Dong-sik Park