Samsung Sdi Co., Inc.

Samsung Display Co., Ltd.

Intellectual Keystone Technology LLC

Dong-Seop Kim

Soo-Hong Lee

Young-Jin Kim

Min-Seok Oh

Young-Su Kim

Yun-Seok Lee

Doo-Youl Lee

Nam-Kyu Song

Young-Sang Park

Chan-Bin Mo

Min Cheol Park

Sang-jin Park

Dong-Uk Choi

Seung-Jae Jung

Min-Chul Song

Byoung-June Kim

Jung-Tae Kim

Czang-Ho Lee

Myung-Hun Shin

Byoung-Kyu Lee

Yuk-Hyun Nam

Joon-Young Seo

Mi-Hwa Lim

Sang-Won Seo

Sang-Wook Park

Byung-Joo Lee

Min Young Park

Sung-Chan Park

Sang-Jin Park

Jeong Su Kim

Jin-Seock Kim

Cho-Young Lee

Gug-Il Jun

Woo-Su Lee

In-Ki Kim

Eun-Joo Lee

Byoung-Dong Kim

Kang-Hee Lee

Jun-Ki Hong

In-Sik Moon

Won-Gyun Kim

Dong-Gi Ahn

Jae-Ho Shin

Hyoung-Jin Park

Hoon-Ha Jeon

Yeon-Ik Jang

Chan-Yoon Jung

Min-Sung Kim

Yoon-Mook Kang

Kyoung-Jin Seo

Heung-Kyoon Lim

Hyoeng-Ki Kim

A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted. According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.

Method of manufacturing photoelectric device

A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

Solar cell

Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.

Method of manufacturing photoelectric conversion device

A solar cell and a method of fabricating the same are provided according to one or more embodiments. According to an embodiment, the solar cell includes a substrate, a back electrode layer formed on the substrate, a light absorbing layer formed on the back electrode layer, and a transparent electrode layer formed on the light absorbing layer, wherein the light absorbing layer is comprised of copper (Cu), gallium (Ga), indium (In), sulfur (S), and selenium (Se) and includes a first concentration region in which concentrations of sulfur (S) gradually decrease in the light absorbing layer going in a first direction from the back electrode layer to the transparent electrode layer.

Solar cell and method of fabricating the same

A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode.

Photoelectric device

Photoelectric conversion device and manufacturing method thereof

A method of manufacturing a solar cell including providing a semiconductor substrate having a first conductivity type; performing a first deposition process that includes forming a first doping material layer having a second conductivity type different from the first conductivity type; performing a drive-in process that includes heating the substrate having the first doping material layer thereon; performing a second deposition process after performing the drive-in process and including forming a second doping material layer on the first doping material layer, wherein the second doping material layer has the second conductivity type; locally heating portions of the substrate, the first doping material layer, and the second doping material layer with a laser to form a contact layer at a first surface of the substrate; and forming a first electrode on the contact layer and a second electrode on a second surface of the substrate opposite to the first surface.

A pn junction solar cell includes a pn junction structure including a p-type and a n-type semiconducting layer, a front contact electrode formed on the front surface of the pn junction structure through a contact pattern having a constant width, and a rear contact electrode formed on a rear surface of the pn structure. The front contact electrode is reduced in its width as it goes away from a terminal.

High efficient pn junction solar cell

A textured semiconductor wafer for a solar cell includes a plurality of grooves being formed on a surface of the semiconductor wafer. The grooves are formed in the step of depositing a protector in the form of islands on the surface by spray process or screen-printing process, dipping the wafer into an isotropic etching solution to etch a portion of the surface where the protector is not deposited, and removing the protector.

Textured semiconductor wafer for solar cell

A solar cell using a ferroelectric material(s) is provided with a ferroelectric layer at the front surface or the rear surface thereof, or at the front and the rear surfaces thereof. The ferroelectric layer is formed with a ferroelectric material such as BaTiO , BST((Ba,Sr)TiO ), PZT((Pb,Zr)TiO ) and SBT(SrBi Ta O ).

Solar cell using ferroelectric material(s)

A technique for fabricating a solar cell includes an n emitter region first being formed on a front surface of the cell, and then front and rear insulating layers being formed on both sides of the cell. P (Phosphorus)-source and B (Boron)-source are printed on the front and rear insulating layers, respectively, and then both dopants are diffused into the cell at high temperature. Therefore, n region in the front side of the cell and BSF (back surface field) region in the rear side of the cell is formed. Front and rear contact patterns are formed on the front and rear insulating layers, respectively. The n region and BSF region are exposed after front and rear contacts are formed on the front and rear insulating layers, respectively. The front and rear contacts contact the n region and BSF region, respectively.

Solar cell and method for fabricating the same

Growing community of inventors

Yongin-si, South Korea

Dong-Seop Kim