Samsung Electronics Co., Ltd.

Gwangju Institute of Science and Technology

Samsung Led Co., Ltd.

Dong-seok Leem

June-o Song

Tae-yeon Seong

Kyoung-kook Kim

Joon-seop Kwak

Tae-yeong Seong

Hyun-Soo Kim

Jae-Hee Cho

Cheol-soo Sone

Sang-ho Kim

Jae-hee Cho

Tae-Yeon Seong

Ok-hyun Nam

Jung-inn Sohn

Tak-hee Lee

A method of manufacturing an ohmic contact layer and a method of manufacturing a top emission type nitride-based light emitting device having the ohmic contact layer are provided. The method of manufacturing an ohmic contact layer includes: forming a first conductive material layer on a semiconductor layer; forming a mask layer having a plurality of nano-sized islands on the first conductive material layer; forming a second conductive material layer on the first conductive material layer and the mask layer; and removing the portion of the second conductive material on the islands and the islands through a lift-off process using a solvent. The method ensures the maintenance of good electrical characteristics and an increase of the light extraction efficiency.

Method of forming ohmic contact layer and method of fabricating light emitting device having ohmic contact layer

A top-emitting nitride-based light-emitting device and a method of manufacturing the same. The top-emitting nitride-based light-emitting device having a substrate, an n-cladding layer, an active layer, and a p-cladding layer sequentially formed includes: a grid cell layer formed on the p-cladding layer by a grid array of separated cells formed from a conducting material with a width of less than 30 micrometers to improve electrical and optical characteristics; a surface protective layer that is formed on the p-cladding layer and covers at least regions between the cells to protect a surface of the p-cladding layer; and a transparent conducting layer formed on the surface protective layer and the grid cell layer using a transparent conducting material. The light-emitting device and the method of manufacturing the same provide an improved ohmic contact to the p-cladding layer, excellent I-V characteristics, and high light transmittance, thus increasing luminous efficiency of the device.

Top-emitting nitride-based light-emitting device with ohmic characteristics and luminous efficiency

Provided is a top-emitting N-based light emitting device and a method of manufacturing the same. The N-based light emitting device may include an n-type clad layer, an active layer, a p-type clad layer, and a transparent conductive thin film which may be sequentially stacked on a substrate. The transparent conductive thin film may have a surface nano-scale patterned by wet-etching and then annealing without using a mask for improving the light extraction rate. A light emitting device having a higher brightness may be prepared by increasing or maximizing the light extraction rate by employing the transparent conductive thin film having the surface patterned by wet-etching and then annealing.

Top-emitting N-based light emitting device and method of manufacturing the same

A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.

Low resistance electrode and compound semiconductor light emitting device including the same

A thin film electrode for ohmic contact of a p-type GaN semiconductor includes first and second electrode layers sequentially stacked on a p-type GaN layer. The first electrode layer may include an Ni-based alloy, a Cu-based alloy, a Co-based alloy, or a solid solution capable of forming a p-type thermo-electronic oxide or may include a Ni-oxide doped with at least one selected from Al, Ga, and In. The second electrode layer may include at least one selected from the group consisting of Au, Pd, Pt, Ru, Re, Sc, Mg, Zn, V, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Ca, Na, Sb, Li, In, Sn, Al, Ni, Cu, and Co. Furthermore, a method of fabricating the thin film electrode is provided.

Thin film electrode for high-quality GaN optical devices

A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successively stacked. The ohmic contact layer is formed by adding an additional element to an indium oxide. According to the light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.

Light emitting device and method of manufacturing the same

Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.

Nitride-based light emitting device and method of manufacturing the same

A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth.

Nitride-based light-emitting device having grid cell layer

A nitride LED having a laminated structure in which a substrate, a n-type cladding layer, an active layer, a p-type cladding layer, and a multi-ohmic contact layer are sequentially stacked, and a manufacturing method thereof, are provided. In the nitride LED, the multi-ohmic contact layer includes multiple layers of a first transparent film layer/silver/second transparent film layer. In the nitride LED and a manufacturing method thereof, ohmic contact characteristics with respect to the p-type cladding layer are enhanced, thereby exhibiting a good current-voltage characteristic. Also, since the transparent electrodes have a high light transmitting property, the light emitting efficiency of the device is increased.

Nitride light emitting device and manufacturing method thereof

Provided are a flip-chip light emitting diode (FCLED) and a method of manufacturing the same. The provided FCLED is formed by sequentially depositing an n-type cladding layer, an active layer, a p-type cladding layer, and a reflective layer on a substrate. The reflective layer is formed of the alloy of silver to which a solute element is added. According to the provided FCLED and the method of manufacturing the same, a thermal stability is improved to improve an ohmic contact characteristic to a p-type cladding layer, thus a wire bonding efficiency and a yield are improved when packaging the provided FCLED. In addition, the light emitting efficiency and the lifespan of the provided FCLED are improved due to a low specific-contact resistance and an excellent current-voltage characteristic.

Flip-chip light emitting diode and method of manufacturing the same

Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.

GaN-based III&#x2014;V group compound semiconductor device and p-type electrode for the same

Provided are a nitride-based light emitting device using a p-type conductive transparent thin film electrode layer and a method of manufacturing the same. The nitride-based light emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer and an ohmic contact layer sequentially formed on the substrate. The ohmic contact layer is made from a p-type conductive transparent oxide thin film. The nitride-based light emitting device and method of manufacturing the same provide excellent I-V characteristics by improving characteristics of an ohmic contact to a p-cladding layer while enhancing light emission efficiency of the device due to high light transmittance exhibited by a transparent electrode.

Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I&#x2013;V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.

Growing community of inventors

Gwangju-si, South Korea

Dong-seok Leem