Hynix Semiconductor Inc.

Skhynix Inc.

Dong Sauk Kim

Jin Woong Kim

Cheol Hwan Park

Jeong Hoon Park

Ho Seok Lee

In a semiconductor device, a support wall is formed between storage nodes to more effectively prevent leaning of a capacitor, and the storage nodes are formed using a damascene process, which may increase a contact area between each storage node and a storage node contact.

Semiconductor device including a support structure

A semiconductor device includes a structure in which a difference in height between a cell region and a peripheral region are formed so that a buried gate structure of the cell region is substantially equal in height to the gate of the peripheral region, whereby a bit line and a storage node contact can be more easily formed in the cell region and parasitic capacitance can be decreased. The semiconductor device includes a cell region including a gate buried in a substrate, and a peripheral region adjacent to the cell region, where a step height between a surface of the cell and a surface of the peripheral region is generated.

Semiconductor device and method for forming the same

A method for forming a contact hole of a semiconductor device, wherein a polymer residual on a bottom surface of the contact hole is treated with plasma of mixture gas containing oxygen to convert the polymer residual into a pure silicon oxide film free of carbon and fluorine for easy removal in a subsequent washing process is disclosed. The method comprises (a) sequentially forming a capping layer and a planarized interlayer insulating film on a semiconductor substrate having a predetermined lower structure; (b) selectively etching the interlayer insulating film to expose a predetermined region of the capping layer; (c) removing the exposed capping layer; (d) subjecting the resulting structure to a plasma treatment using a mixture gas containing oxygen; and (e) performing a cleaning process.

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Seoul, South Korea

Dong Sauk Kim