Industry-university Cooperation Foundation Hanyang University

Etamax Co., Ltd

Dong Pyo Han

Jong-In Shim

Dong-Soo Shin

Hyun Don Jung

Disclosed are a method and device for measuring the resistance of a light-emitting diode that can measure the resistance value of the light-emitting diode accurately in a non-destructive manner. The disclosed method may include: measuring a first radiative current component of an injected current for the light-emitting diode by using the internal quantum efficiency of the light-emitting diode; generating a second radiative current component by modeling the first radiative current component; and computing a resistance value of the light-emitting diode by using the first and second radiative current components resulting from an applied voltage to the light-emitting diode.

Method and apparatus for measuring resistance of light emitting diode

A method for measuring the efficiency of an optical element is disclosed. The intensity of the light emitted from the optical element is measured by applying an injection current to the optical element, a relative radiative efficiency is calculated from a ratio of the intensity of the emitted light to the injection current, the maximum relative radiative efficiency and the maximum injection current corresponding to the maximum relative radiative efficiency are obtained, a reference injection current for minimizing an amount of change of a recombination coefficient in an active layer of the optical element in correspondence with a carrier density change in the active layer of the optical element is extracted from data of injection currents that are equal to or less than the maximum injection current and data of relative radiative efficiencies that are equal to or less than the maximum relative radiative efficiency, a reference internal quantum efficiency of the optical element is calculated from the reference injection current, and internal quantum efficiencies of the optical element in various injection currents are calculated from the reference internal quantum efficiency.

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Seongnam-si, South Korea

Dong Pyo Han