Sifotonics Technologies Co., Ltd.

Massachusetts Institute of Technology

Sifotonics Technologies (usa) Inc.

Dong Pan

Pengfei Cai

Tuo Shi

Mengyuan Huang

Ching-yin Hong

Tzung-I Su

Wang Chen

Su Li

Liangbo Wang

Yongbo Shao

Lionel Cooper Kimerling

Jurgen Michel

Nai Zhang

Shipeng Yan

Changhua Chen

Ning Zhang

Jifeng Liu

Yadong Liu

Yanwu Zhang

Jack Yuan

Wei Lin

Zhou Fang

Wojciech P Giziewicz

Sajan Saini

Rangchen Yu

Edward Hartley Sargent

Chee Wei Wong

John A Yasaitis

Te-huang Chiu

James F McMillan

Liang Chen

Chingyin Hong

Naichuan Zhang

Fuwan Gan

Michael D Sockin

Zuoxi Li

Tzung I Su

Siying Liu

Tzungi Su

Bo Peng

Zhong Yu

Chunmei Li

Various embodiments of a monolithic transceiver are described, which may be fabricated on a semiconductor substrate. The monolithic transceiver includes a coherent receiver module (CRM), a coherent transmitter module (CTM), and a local oscillation splitter to feed a local oscillation to the CRM and the CTM with a tunable power ratio. The monolithic transceiver provides tunable responsivity by employing photodiodes for opto-electrical conversion. The monolithic transceiver also employs a polarization beam rotator-splitter (PBRS) and a polarization beam rotator-combiner (PBRC) for supporting modulation schemes including polarization multiplexed quadrature amplitude modulation (PM-QAM) and polarization multiplexed quadrature phase shift keying (PM-QPSK).

Monolithic integrated coherent transceiver

Various embodiments of a coplanar waveguide (CPW) transmission line as well as a silicon-based electro-optic (E-O) modulator comprising the CPW transmission line are described. The CPW transmission line has a curved or winding shape. The silicon-based E-O modulator includes a rib optical waveguide, a beam splitter, a beam combiner, and a CPW transmission line that exhibits the winding shape. At least one of the two optical arms of the rib optical waveguide alternately and periodically extends through a first groove and a second groove of the CPW transmission line. The plurality of active sections of the rib optical waveguide are evenly distributed on both sides of the CPW transmission line to suppress undesired transmission modes. An increased length of transmission path of the rib optical waveguide is also avoided or minimized, thereby reducing the transmission speed mismatch of the E-O modulator, which is essential for achieving high-speed operation.

Coplanar waveguide transmission line and silicon-based electro-optic modulator comprising the same

Various embodiments of a monolithic avalanche photodiode (APD) are described, which may be fabricated on a silicon-on-insulator substrate. The monolithic APD includes an optical waveguide that guides an incident light to an active region of the APD. An optical coupler is integrally formed with the optical waveguide to capture the incident light. The monolithic APD also includes an optical reflector to reflect a portion of the incident light that is not readily captured by the optical coupler back to the optical coupler for further capturing. The active region includes an absorption layer for converting the incident light into a photocurrent, an epitaxial structure for amplifying the photocurrent by avalanche multiplication, as well as a pair of electrical conductors for conducting the amplified photocurrent.

Waveguide-integrated avalanche photodiode

Various embodiments of a monolithic transceiver are described, which may be fabricated on a semiconductor substrate. The monolithic transceiver includes a coherent receiver module (CRM), a coherent transmitter module (CTM), and a local oscillation splitter to feed a local oscillation to the CRM and the CTM with a tunable power ratio. The monolithic transceiver provides tunable responsivity by employing avalanche photodiodes (APDs) for opto-electrical conversion. The monolithic transceiver also employs a polarization beam rotator-splitter (PBRS) and a polarization beam rotator-combiner (PBRC) for supporting modulation schemes including polarization multiplexed quadrature amplitude modulation (PM-QAM) and polarization multiplexed quadrature phase shift keying (PM-QPSK).

Various embodiments of a monolithic electro-optical (E-O) modulator are described. The monolithic E-O modulator includes an active region comprising a plurality of p-n junction diodes, as well as a modulation electrode and a bias electrode that extend through the active region. The monolithic E-O modulator further includes a resistor-capacitor-bias-capacitor (RCBC) electrode structure configured to receive an electrical modulation signal, a direct-current (DC) bias voltage and a power supply voltage. Specifically, the RCBC electrode structure includes a resistor coupled to the modulation electrode and two capacitors each coupled to a respective end of the bias electrode. Beneficially, the RCBC electrode structure enables the p-n junction diodes to be biased independently from a DC level of the electrical modulation signal.

Monolithic electro-optical modulator having RCBC electrode structure

Various embodiments of a monolithic electro-optical (E-O) modulator are described, which may be fabricated on a silicon-on-insulator substrate. The monolithic E-O modulator includes an optical waveguide that allows an optical signal to propagate therein. The monolithic E-O modulator also includes a comb-shaped transmission line for conducting an electrical modulation signal that modulates the optical signal. The comb-shaped transmission line includes electrical conductors running in parallel with the optical waveguide. At least one of the conductors includes recesses or thin slots that form the conductor into a shape having a plurality of teeth, like a comb. The comb-shaped transmission line can be engineered to realize a close matching between a propagation velocity of the optical signal along the optical waveguide and a group velocity of the electrical modulation signal along the comb-shaped transmission line, which helps to achieve a high operating speed of the monolithic E-O modulator.

Monolithic electro-optical modulator with comb-shaped transmission line

Various embodiments of a photonic integrated circuit (PIC) are described herein. A PIC, functioning as a coherent receiver, may include optical components such as an optical coupler, a directional coupler, a beam splitter, a polarizing beam rotator-splitter, a variable optical attenuator, a monitor photodiode, 90-degree hybrid mixer, and a waveguide photodiode. The PIC may also include electrical components such as an electrode, a capacitor, a resistor and a Zener diode.

Silicon photonic integrated circuit with electrostatic discharge protection

Various embodiments of a monolithic electro-optical (E-O) modulator are described herein. The monolithic E-O modulator may include a phase shifter having a suspended structure. The suspended structure may be realized by partially or completely removing silicon material underneath the active area of the phase shifter to form a void in the bulk silicon substrate supporting the phase shifter. The suspended structure may be utilized to result in a lower radio-frequency loss and an effective group refractive index of the phase shifter that is closer to the refractive index of silicon waveguides or optical fibers, both advantageous to enhancing the performance of the E-O modulator such as a higher operating bandwidth.

Monolithic electro-optical modulator having suspended structure

Silicon photonic integrated circuit with electrostatic discharge protection mechanism for static electric shocks

Various embodiments of a fully integrated avalanche photodiode receiver and manufacturing method thereof are described herein. A photonic device includes a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, an avalanche photodiode integrated with the SOI substrate, a capacitor integrated with the SOI substrate, a resistor integrated with the SOI substrate, and silicon passive waveguides as well as bonding pads integrated with the SOI substrate.

Fully integrated avalanche photodiode receiver

Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.

Compensated photonic device structure and fabrication method thereof

Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. A photonic device may include a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, a Si waveguide and an n-type contact layer formed on the BOX layer, a Si multiplication layer disposed on the n-type contact layer, a p-type Si charge layer disposed on the Si multiplication layer, a germanium (Ge) absorption layer disposed on the p-type Si charge layer, a p-type contact layer disposed on the Ge absorption layer, and a metal layer disposed on the p-type contact layer. A compensated region may be formed between the p-type Si charge layer and the Ge absorption layer with a portion of the compensated region in the p-type Si charge layer and another portion of the compensated region in the Ge absorption layer.

An imprinting method for forming an integrated optical coupling device on wafer level may include: providing a substrate, with a reflection coating disposed thereon; providing an imprinting mold, with void regions shaped according to a designed lens profile; forming a molding material on the substrate; pressing the imprinting mold on the molding material on the substrate; curing the molding material into a cured molding material; removing the imprinting mold; depositing an anti-reflection film on the cured molding material; and dicing to form an integrated optical coupling device.

Integrated lens-array-on-substrate for optical coupling system and fabrication method thereof

Various embodiments of an integrated polarization rotator-splitter/combiner apparatus are described. An integrated polarization rotator-splitter apparatus may include an input waveguide section, a polarization rotator section, a polarization splitter section and an outgoing waveguide section, which can also be reversely connected as a polarization rotator-combiner.

Polarization rotator-splitter/combiner based on silicon rib-type waveguides

An optical coupler structure may include a substrate, a waveguide section and an anchored cantilever section. The substrate may include a main body and a sub-pillar structure formed on the main body. The waveguide section may be disposed on the substrate, and may include a core waveguide of a first material surrounded by a cladding layer of a second material. The anchored cantilever section may be disposed on the sub-pillar structure on the substrate, which may be configured to support the cantilever section and separate the cantilever section from the main body of the substrate. The anchored cantilever section may include a multi-stage inverse taper core waveguide and a cladding layer, of the second material, which surrounds the multi-stage inverse taper core waveguide.

Optical coupler having anchored cantilever structure with multi-stage inverse taper core waveguide and fabrication method thereof

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Andover, MA, United States of America

Dong Pan